UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 53

Sortiert nach

Thermal optimization of two-terminal SOT-MRAM

Journal of applied physics, 2024-07, Vol.136 (1)

2024

Link zum Volltext

Verfügbarkeit prüfen

Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3

Nature materials, 2023-05, Vol.22 (5), p.591-598

2023

Link zum Volltext

Verfügbarkeit prüfen

Tunable spin–orbit torque efficiency in in-plane and perpendicular magnetized [Pt/Co]n multilayer

Applied physics letters, 2021-01, Vol.118 (4)

2021

Link zum Volltext

Verfügbarkeit prüfen

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4354-4362

2017

Link zum Volltext
IEEE_Xplore

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors

Advanced electronic materials, 2023-06, Vol.9 (6), p.n/a

2023

Link zum Volltext

Verfügbarkeit prüfen

Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer

APL materials, 2021-10, Vol.9 (10), p.101106-101106-8

2021

Link zum Volltext

Verfügbarkeit prüfen

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.674-680

2020

Link zum Volltext

Verfügbarkeit prüfen

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

Applied physics letters, 2009-04, Vol.94 (15), p.153508-153508-3

2009

Link zum Volltext

Verfügbarkeit prüfen

High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

Link zum Volltext
IEEE_Xplore

How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

ACS omega, 2017-08, Vol.2 (8), p.4173-4179

2017

Link zum Volltext

Verfügbarkeit prüfen

Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces

Applied physics letters, 2008-11, Vol.93 (19)

2008

Link zum Volltext

Verfügbarkeit prüfen

Atomic layer deposition of hafnium oxide on germanium substrates

Journal of applied physics, 2005-03, Vol.97 (6), p.064104-064104-10

2005

Link zum Volltext

Verfügbarkeit prüfen

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

Nano letters, 2014-11, Vol.14 (11), p.6275-6280

2014

Link zum Volltext

Verfügbarkeit prüfen

On-Device Continual Learning With STT-Assisted-SOT MRAM-Based In-Memory Computing

IEEE transactions on computer-aided design of integrated circuits and systems, 2024-08, Vol.43 (8), p.2393-2404

2024

Link zum Volltext
IEEE_Xplore

The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics

Applied physics letters, 2010-04, Vol.96 (14)

2010

Link zum Volltext

Verfügbarkeit prüfen

Atomic Layer Deposition of WO3‑Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors

Nano letters, 2024-05, Vol.24 (19), p.5737-5745

2024

Link zum Volltext

Verfügbarkeit prüfen

Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors

Nano letters, 2024-05, Vol.24 (19), p.5737-5745

2024

Link zum Volltext

Verfügbarkeit prüfen

Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering

ACS applied materials & interfaces, 2023-11, Vol.15 (43), p.50246-50253

2023

Link zum Volltext

Verfügbarkeit prüfen

Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

Applied surface science, 2018-06, Vol.443, p.644-654

2018

Link zum Volltext

Verfügbarkeit prüfen

Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia–Zirconia Alloys

ACS applied materials & interfaces, 2022-11, Vol.14 (47), p.53057-53064

2022

Link zum Volltext

Verfügbarkeit prüfen

Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering

ACS applied materials & interfaces, 2023-11, Vol.15 (43), p.50246-50253

2023

Link zum Volltext

Verfügbarkeit prüfen

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects

ACS nano, 2024-07, Vol.18 (27), p.17600-17610

2024

Link zum Volltext

Verfügbarkeit prüfen

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

Applied physics letters, 2008-08, Vol.93 (8)

2008

Link zum Volltext

Verfügbarkeit prüfen

Energy Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

IEEE transactions on magnetics, 2023-03, Vol.59 (3), p.1-6

2023

Link zum Volltext
IEEE_Xplore

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf 0.5 Zr 0.5 O 2 Thin Film Capacitors

Advanced electronic materials, 2023-06, Vol.9 (6)

2023

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 53

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(38)
Mit Volltextzugriff
(41)

Publikationsform

Sprache

Englisch
(50)
Japanisch
(9)

Erscheinungsjahr

n.n

Thema

Science & Technology
(26)
Technology
(21)
Physical Sciences
(16)
Physics
(14)
Physics, Applied
(14)
Materials Science
(12)
Materials Science, Multidisciplinary
(10)
Engineering
(9)
Engineering, Electrical & Electronic
(9)
Nanoscience & Nanotechnology
(8)
Science & Technology - Other Topics
(8)
Torque
(8)
Chemistry
(7)
Random Access Memory
(7)
Transistors
(7)
Applied Sciences
(5)
Chemistry, Physical
(5)
Electronics
(5)
Exact Sciences And Technology
(5)
Magnetic Tunneling
(5)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Thermal optimization of two-terminal SOT-MRAM

Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3

Tunable spin–orbit torque efficiency in in-plane and perpendicular magnetized [Pt/Co]n multilayer

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors

Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)

How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces

Atomic layer deposition of hafnium oxide on germanium substrates

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

On-Device Continual Learning With STT-Assisted-SOT MRAM-Based In-Memory Computing

The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics

Atomic Layer Deposition of WO3‑Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors

Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors

Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering

Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia–Zirconia Alloys

Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

Energy Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf 0.5 Zr 0.5 O 2 Thin Film Capacitors

Suchergebnisse filtern