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Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor

Technical physics letters, 2019-03, Vol.45 (3), p.235-238

2019

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Formation of a Fine-Grained Si1–xGexThermoelectric by Spark Plasma Sintering

Technical physics, 2024, Vol.69 (3), p.517-525

2024

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Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with co-evaporation of Sn

Journal of crystal growth, 2022-01, Vol.578, p.126421, Article 126421

2022

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Formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb diluted magnetic semiconductors layers

Journal of magnetism and magnetic materials, 2019-10, Vol.487, p.165321, Article 165321

2019

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Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2020-09, Vol.259, p.114579, Article 114579

2020

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Control of the Profile and Curvature of the Surface of Single-Crystal Plates of X-Ray Optical Elements Using Piezoelectric Bimorphs

Instruments and experimental techniques (New York), 2019-09, Vol.62 (5), p.703-707

2019

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New functional material: spark plasma sintered Si/SiO2 nanoparticles – fabrication and properties

RSC advances, 2019, Vol.9 (29), p.16746-16753

2019

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New functional material: spark plasma sintered Si/SiO 2 nanoparticles - fabrication and properties

RSC advances, 2019-05, Vol.9 (29), p.16746-16753

2019

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The Influence of the Form of a Curvature Regulator Substrate on the Curvature of the Profile of X-ray Optics Elements

Instruments and experimental techniques (New York), 2018, Vol.61 (1), p.148-152

2018

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Manufacturing of Sputtering Composite Targets Containing Phases of Co2FeSi or Co2MnSi Heusler Alloy

Technical physics, 2018-07, Vol.63 (7), p.1002-1005

2018

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Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Nanosystems : Physics, Chemistry, Mathematics, 2020, Vol.11 (6), p.680-684

2020

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On controlling the surface curvature of diffraction components

Surface investigation, x-ray, synchrotron and neutron techniques, 2017-05, Vol.11 (3), p.505-509

2017

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Low temperature growth of the epitaxial Ge layers on Si(100) by Hot Wire Chemical Vapor Deposition

Journal of physics. Conference series, 2014-01, Vol.541 (1), p.12026-5

2014

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Ion-beam synthesis of GaN in silicon

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12082

2015

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On the formation of arrays of single-crystal silicon islands with small angular dispersion

Surface investigation, x-ray, synchrotron and neutron techniques, 2017, Vol.11 (1), p.202-205

2017

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Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-04, Vol.537, p.65-70

2023

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Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-04, Vol.537, p.60-64

2023

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Structure and surface morphology of Si1 — x Ge x layers grown on Si/sapphire by molecular beam epitaxy using a sublimation silicon source and gaseous germanium source

Inorganic materials, 2013-08, Vol.49 (8), p.749-753

2013

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Formation of a Fine-Grained Si1 – xGex Thermoelectric by Spark Plasma Sintering

Technical physics, 2024-01, Vol.69 (3), p.517-525

2024

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Quality of KDP crystals grown on point seeds by a novel rapid growth method

Inorganic materials, 2008-08, Vol.44 (8), p.870-875

2008

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Simulation of the spatial structure of x-ray beams under conditions of the correction of the heat flow incident on a crystal

Surface investigation, x-ray, synchrotron and neutron techniques, 2007-06, Vol.1 (3), p.273-276

2007

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X-ray crystal monochromator with the controllable rocking curve FWHM

Instruments and experimental techniques (New York), 2015-03, Vol.58 (2), p.272-278

2015

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Thermal control over X-ray diffraction patterns

Technical physics letters, 2006-06, Vol.32 (6), p.477-478

2006

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Manufacturing of Sputtering Composite Targets Containing Phases of Co{sub 2}FeSi or Co{sub 2}MnSi Heusler Alloy

Technical physics, 2018-07, Vol.63 (7)

2018

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Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

Inorganic materials, 2007-04, Vol.43 (4), p.331-337

2007

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Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor

Formation of a Fine-Grained Si1–xGexThermoelectric by Spark Plasma Sintering

Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with co-evaporation of Sn

Formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb diluted magnetic semiconductors layers

Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition

Control of the Profile and Curvature of the Surface of Single-Crystal Plates of X-Ray Optical Elements Using Piezoelectric Bimorphs

New functional material: spark plasma sintered Si/SiO2 nanoparticles – fabrication and properties

New functional material: spark plasma sintered Si/SiO 2 nanoparticles - fabrication and properties

The Influence of the Form of a Curvature Regulator Substrate on the Curvature of the Profile of X-ray Optics Elements

Manufacturing of Sputtering Composite Targets Containing Phases of Co2FeSi or Co2MnSi Heusler Alloy

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

On controlling the surface curvature of diffraction components

Low temperature growth of the epitaxial Ge layers on Si(100) by Hot Wire Chemical Vapor Deposition

Ion-beam synthesis of GaN in silicon

On the formation of arrays of single-crystal silicon islands with small angular dispersion

Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

Structure and surface morphology of Si1 — x Ge x layers grown on Si/sapphire by molecular beam epitaxy using a sublimation silicon source and gaseous germanium source

Formation of a Fine-Grained Si1 – xGex Thermoelectric by Spark Plasma Sintering

Quality of KDP crystals grown on point seeds by a novel rapid growth method

Simulation of the spatial structure of x-ray beams under conditions of the correction of the heat flow incident on a crystal

X-ray crystal monochromator with the controllable rocking curve FWHM

Thermal control over X-ray diffraction patterns

Manufacturing of Sputtering Composite Targets Containing Phases of Co{sub 2}FeSi or Co{sub 2}MnSi Heusler Alloy

Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

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