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C and CH4 as Transport Agents for the CVT Growth of ZnO Crystals

Physica status solidi. B. Basic research, 2002-01, Vol.229 (2), p.835-839

2002

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Influence of a ZnMnTe buffer layer on the growth of ZnTe on (0 0 1)GaAs by MOVPE

Journal of crystal growth, 2003-02, Vol.249 (1), p.15-22

2003

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ZnO growth by chemical vapour transport

Journal of crystal growth, 1999-11, Vol.207 (1), p.30-34

1999

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Seed-free growth of (1 1 1) oriented CdTe and CdZnTe crystals by solid-state recrystallization

Journal of crystal growth, 2003-02, Vol.249 (1), p.121-127

2003

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n-type diamond with high room temperature electrical conductivity by deuteration of boron doped diamond layers

Diamond and related materials, 2004-04, Vol.13 (4), p.700-704

2004

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Substrate issues for the growth of mercury cadmium telluride

Journal of electronic materials, 1993-08, Vol.22 (8), p.827-834

1993

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Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers

Nature materials, 2003-07, Vol.2 (7), p.482-486

2003

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Evidence of hetero-epitaxy of Sm-orthoferrite on MgO(0 0 1) substrates by the pulsed laser deposition technique

Journal of crystal growth, 2002-10, Vol.244 (3), p.274-280

2002

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Growth and Electrical Properties of ZnO Grown by Closed Space Vapor Transport on Sapphire Substrates

MRS proceedings, 2005, Vol.864, Article E1.6

2005

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Growth by solid phase recrystallization and assessment of large ZnSe crystals of high purity and structural perfection

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.156-160

1996

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Low resistive ZnSe substrates

Journal of crystal growth, 1999-02, Vol.197 (3), p.462-465

1999

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MOVPE growth of ZnSxSe1−x/GaAs(1 0 0) using ditertiarybutylselenium, tertiarybutylmercaptan and dimethylzinc triethylamine as precursors

Journal of crystal growth, 1998-02, Vol.184-185, p.149-152

1998

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Solution hardening and dislocation density reduction in CdTe crystals by Zn addition

Journal of crystal growth, 1988-01, Vol.86 (1-4), p.61-65

1988

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Optical properties of CdS layers grown by MOVPE on (211) B and (100) GaAs

Semiconductor science and technology, 2000-04, Vol.15 (4), p.408-412

2000

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Advances in HgCdTe N—P—N—P photoconductive structures

Journal of crystal growth, 1998, Vol.184, p.1279-1283

1998

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Crystal growth and characterization of CdTe doped with transition metal elements

Optical materials, 1995, Vol.4 (2), p.241-245

1995

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Influence of a ZnMnTe nucleation layer on the structural quality of (111) ZnTe grown by MOVPE on (100) GaAs

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.549-552

1997

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Twin-free CdHgTe layers grown by MOCVD on vicinal (211) GaAs surfaces

Materials letters, 1995-04, Vol.23 (1-3), p.93-98

1995

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Effect of the [formula omitted] orientations and polarities of GaAs substrates CdTe buffer layer structural properties

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-01, Vol.16 (1), p.145-150

1993

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Novel modulated flow technique for the OMCVD growth of CdHgTe at 300°C

Materials letters, 1994, Vol.19 (3), p.99-104

1994

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MOVPE-grown MCT layers: low-temperature direct alloy growth versus IMP

Semiconductor science and technology, 1991-12, Vol.6 (12C), p.C22-C25

1991

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MOVPE growth and characterization of Hg0.7Cd0.3Te layers

Journal of crystal growth, 1990-04, Vol.101 (1-4), p.73-77

1990

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Growth of CdTe and CdZnTe by Solid State Recrystallization. Once Again a ′Novel′ Method of CdTe Crystal Growth?

ChemInform, 2003-06, Vol.34 (23), p.no-no

2003

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Analysis of rocking curve width and bound exciton linewidth of MOCVD grown CdTe layers in relation with substrate type and crystalline orientation

Journal of materials science. Materials in electronics, 1991-12, Vol.2 (4), p.187-193

1991

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Extended defects in II-VI semiconductor heteroepitaxial layers grown on GaAs substrates of various orientations

Physica status solidi. A, Applied research, 1993-08, Vol.138 (2), p.437-443

1993

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C and CH4 as Transport Agents for the CVT Growth of ZnO Crystals

Influence of a ZnMnTe buffer layer on the growth of ZnTe on (0 0 1)GaAs by MOVPE

ZnO growth by chemical vapour transport

Seed-free growth of (1 1 1) oriented CdTe and CdZnTe crystals by solid-state recrystallization

n-type diamond with high room temperature electrical conductivity by deuteration of boron doped diamond layers

Substrate issues for the growth of mercury cadmium telluride

Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers

Evidence of hetero-epitaxy of Sm-orthoferrite on MgO(0 0 1) substrates by the pulsed laser deposition technique

Growth and Electrical Properties of ZnO Grown by Closed Space Vapor Transport on Sapphire Substrates

Growth by solid phase recrystallization and assessment of large ZnSe crystals of high purity and structural perfection

Low resistive ZnSe substrates

MOVPE growth of ZnSxSe1−x/GaAs(1 0 0) using ditertiarybutylselenium, tertiarybutylmercaptan and dimethylzinc triethylamine as precursors

Solution hardening and dislocation density reduction in CdTe crystals by Zn addition

Optical properties of CdS layers grown by MOVPE on (211) B and (100) GaAs

Advances in HgCdTe N—P—N—P photoconductive structures

Crystal growth and characterization of CdTe doped with transition metal elements

Influence of a ZnMnTe nucleation layer on the structural quality of (111) ZnTe grown by MOVPE on (100) GaAs

Twin-free CdHgTe layers grown by MOCVD on vicinal (211) GaAs surfaces

Effect of the [formula omitted] orientations and polarities of GaAs substrates CdTe buffer layer structural properties

Novel modulated flow technique for the OMCVD growth of CdHgTe at 300°C

MOVPE-grown MCT layers: low-temperature direct alloy growth versus IMP

MOVPE growth and characterization of Hg0.7Cd0.3Te layers

Growth of CdTe and CdZnTe by Solid State Recrystallization. Once Again a ′Novel′ Method of CdTe Crystal Growth?

Analysis of rocking curve width and bound exciton linewidth of MOCVD grown CdTe layers in relation with substrate type and crystalline orientation

Extended defects in II-VI semiconductor heteroepitaxial layers grown on GaAs substrates of various orientations

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