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Conception de cellules nano-CMOS – Perspectives à dix ans

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2024, Vol.23, p.1018

2024

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Pédagogie hybride pour l’apprentissage de la conception d’un microprocesseur simplifié niveau master avec μWind

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2022, Vol.21, p.1005

2022

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Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Optical Feedback Interferometry imaging sensor for micrometric flow-patterns using continuous scanning

2019 IEEE SENSORS, 2019, p.1-4

2019

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DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory

Microelectronic engineering, 2013-07, Vol.107, p.1-5

2013

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Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100)

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3414-3420

2008

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Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)-Does the Dielectric Quality Matter?

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3009-3017

2009

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Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices

Solid-state electronics, 2021-11, Vol.185, p.108055, Article 108055

2021

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Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs

Microelectronic engineering, 2017-06, Vol.178, p.42-47

2017

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Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model

Solid-state electronics, 2019-04, Vol.154, p.24-30

2019

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On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Solid-state electronics, 2017-06, Vol.132, p.49-56

2017

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RF Split Capacitance-Voltage Measurements of Short-Channel and Leaky MOSFET Devices

IEEE electron device letters, 2006-09, Vol.27 (9), p.772-774

2006

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On the Impact of Defects Close to the Gate Electrode on the Low-Frequency \hbox/f Noise

IEEE electron device letters, 2008-09, Vol.29 (9), p.1056-1058

2008

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Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation

IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1771-1775

2007

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Impact of AlN layer sandwiched between the GaN and the Al^sub 2^O^sub 3^ layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs

Microelectronic engineering, 2017-06, Vol.178, p.42

2017

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Reduction of the anomalous VT behavior in MOSFETs with high- κ/metal gate stacks

Microelectronic engineering, 2007-09, Vol.84 (9), p.1882-1885

2007

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Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

IEEE electron device letters, 2007-07, Vol.28 (7), p.613-615

2007

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Performance assessment of (1 1 0) p-FET high- κ/MG: is it mobility or series resistance limited?

Microelectronic engineering, 2007-09, Vol.84 (9), p.2058-2062

2007

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Understanding and Importance of Defects in Advanced Materials

ECS transactions, 2009, Vol.18 (1), p.651-658

2009

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Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

Microelectronic engineering, 2005-06, Vol.80, p.86-89

2005

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High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1856-1862

2012

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Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.1878-1881

2007

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Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1657-1668

2006

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A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

Microelectronic engineering, 2015-11, Vol.147, p.72-74

2015

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Trapping in 1nm EOT high-k / MG

ECS transactions, 2008, Vol.16 (5), p.77-84

2008

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Conception de cellules nano-CMOS – Perspectives à dix ans

Pédagogie hybride pour l’apprentissage de la conception d’un microprocesseur simplifié niveau master avec μWind

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Optical Feedback Interferometry imaging sensor for micrometric flow-patterns using continuous scanning

DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory

Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100)

Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)-Does the Dielectric Quality Matter?

Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices

Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs

Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

RF Split Capacitance-Voltage Measurements of Short-Channel and Leaky MOSFET Devices

On the Impact of Defects Close to the Gate Electrode on the Low-Frequency \hbox/f Noise

Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation

Impact of AlN layer sandwiched between the GaN and the Al^sub 2^O^sub 3^ layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs

Reduction of the anomalous VT behavior in MOSFETs with high- κ/metal gate stacks

Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

Performance assessment of (1 1 0) p-FET high- κ/MG: is it mobility or series resistance limited?

Understanding and Importance of Defects in Advanced Materials

Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects

Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN

Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

Trapping in 1nm EOT high-k / MG

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