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Assessing the hydrologic restoration of an urbanized area via an integrated distributed hydrological model

Hydrology and earth system sciences, 2013-12, Vol.17 (12), p.4789-4801

2013

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Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

Electronics letters, 2010-09, Vol.46 (18), p.1280-1281

2010

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TA4AlC3 : Phase determination, polymorphism and deformation

Acta materialia, 2007-08, Vol.55 (14), p.4723-4729

2007

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Direct current magnetron sputtering deposition of nanocomposite alumina — zirconia thin films

Thin solid films, 2008-10, Vol.516 (23), p.8352-8358

2008

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The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Applied physics letters, 2010-07, Vol.97 (4)

2010

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Phase transformation in κ- and γ-Al2O3 coatings on cutting tool inserts

Surface & coatings technology, 2009-03, Vol.203 (12), p.1682-1688

2009

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Nanocomposite Al2O3-ZrO2 thin films grown by reactive dual radio-frequency magnetron sputtering

Thin solid films, 2008-06, Vol.516 (15), p.4977-4982

2008

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Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments

IEEE electron device letters, 2011-06, Vol.32 (6), p.752-754

2011

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Sensor classification for the fault detection and isolation, a structural approach

International journal of adaptive control and signal processing, 2011-01, Vol.25 (1), p.1-17

2011

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In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.235-240

2013

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hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$-Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.235-240

2013

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[Formula Omitted]-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.235-240

2013

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InMotion hybrid racecar: F1 performance with LeMans endurance

Compel, 2015-01, Vol.34 (1), p.210-233

2015

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Electrical Characterization of \hbox \hbox/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments

IEEE electron device letters, 2011-06, Vol.32 (6), p.752-754

2011

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Radio frequency dual magnetron sputtering deposition and characterization of nanocomposite Al2O3–ZrO2 thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-03, Vol.24 (2), p.309-316

2006

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Efficacité et complications de la technique d'infundibulotomie au cours du cathétérisme des voies biliaires

Endoscopy, 2006, Vol.38 (3)

2006

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Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

Journal of electronic materials, 2012-08, Vol.41 (8), p.2139-2144

2012

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Phase identification in γ- and κ-alumina coatings by cathodoluminescence

Scripta materialia, 2009-08, Vol.61 (4), p.379-382

2009

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(Invited) Passivation of Al 2 O 3 /n, p-In 0.53 Ga 0.47 as Interfaces: Influence of Plasma Enhanced Atomic Layer Deposition Aluminum Nitride with Various Plasma Powers

ECS transactions, 2014-02, Vol.60 (1), p.1075-1079

2014

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Phase identification in g- and k-alumina coatings by cathodoluminescence

Scripta materialia, 2009-08, Vol.61 (4), p.379-382

2009

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Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

Electronics letters, 2010-09, Vol.46 (18), p.1-1

2010

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Nanocomposite Al 2 O 3 -ZrO 2 thin films grown by reactive dual radio-frequency magnetron sputtering

Thin solid films, 2008, Vol.516 (15), p.4977

2008

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Experiments and modeling of dual reactive magnetron sputtering using two reactive gases

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-07, Vol.26 (4), p.565-570

2008

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Electrical Characterization of hbox Al 2 hbox O 3 /n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments

IEEE electron device letters, 2011-06, Vol.32 (6), p.752-754

2011

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Electrical Characterization of [Formula Omitted]/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments

IEEE electron device letters, 2011-06, Vol.32 (6), p.752

2011

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Assessing the hydrologic restoration of an urbanized area via an integrated distributed hydrological model

Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

TA4AlC3 : Phase determination, polymorphism and deformation

Direct current magnetron sputtering deposition of nanocomposite alumina — zirconia thin films

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Phase transformation in κ- and γ-Al2O3 coatings on cutting tool inserts

Nanocomposite Al2O3-ZrO2 thin films grown by reactive dual radio-frequency magnetron sputtering

Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments

Sensor classification for the fault detection and isolation, a structural approach

In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition

hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$-Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition

[Formula Omitted]-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition

InMotion hybrid racecar: F1 performance with LeMans endurance

Electrical Characterization of \hbox \hbox/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments

Radio frequency dual magnetron sputtering deposition and characterization of nanocomposite Al2O3–ZrO2 thin films

Efficacité et complications de la technique d'infundibulotomie au cours du cathétérisme des voies biliaires

Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

Phase identification in γ- and κ-alumina coatings by cathodoluminescence

(Invited) Passivation of Al 2 O 3 /n, p-In 0.53 Ga 0.47 as Interfaces: Influence of Plasma Enhanced Atomic Layer Deposition Aluminum Nitride with Various Plasma Powers

Phase identification in g- and k-alumina coatings by cathodoluminescence

Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

Nanocomposite Al 2 O 3 -ZrO 2 thin films grown by reactive dual radio-frequency magnetron sputtering

Experiments and modeling of dual reactive magnetron sputtering using two reactive gases

Electrical Characterization of hbox Al 2 hbox O 3 /n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments

Electrical Characterization of [Formula Omitted]/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments

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