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Work function tuning of metal nitride electrodes for advanced CMOS devices

Thin solid films, 2006-05, Vol.504 (1), p.174-177

2006

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Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.730-736

2006

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A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

IEEE electron device letters, 2006-05, Vol.27 (5), p.350-353

2006

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Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Applied physics letters, 2007-02, Vol.90 (9), p.092108-092108-3

2007

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Performance of silicon nanocrystal non-volatile memory devices under various programming mechanisms

Journal of nanoscience and nanotechnology, 2007-01, Vol.7 (1), p.329-334

2007

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Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation

Journal of applied physics, 2007-05, Vol.101 (10)

2007

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Modular sensor chip design for package stress evaluation and reliability characterisation

Microelectronics and reliability, 2012-08, Vol.52 (8), p.1581-1585

2012

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Review - Characterisation and analysis of surface engineered thin films

Transactions of the Institute of Metal Finishing, 2009-07, Vol.87 (4), p.178-192

Trigg, A. D.

2009

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Charge trapping phenomena of tetraethylorthosilicate thin film containing Si nanocrystals synthesized by solid-state reaction

Nanotechnology, 2006-08, Vol.17 (16), p.4078-4081

2006

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Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2871-2877

2007

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Silicon Nanowire Arrays for Label-Free Detection of DNA

Analytical chemistry (Washington), 2007-05, Vol.79 (9), p.3291-3297

2007

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WSiN cap for Ohmic contacts to n-GaN with better morphology

Physica status solidi. C, 2005-05, Vol.2 (7), p.2548-2550

2005

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Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2005-08, Vol.87 (7), p.073506-073506-3

2005

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Detection of MicroRNAs Using Target-Guided Formation of Conducting Polymer Nanowires in Nanogaps

Journal of the American Chemical Society, 2007-05, Vol.129 (17), p.5437-5443

2007

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Charge injection and tunneling mechanism of solid state reaction silicon nanocrystal film

Applied physics letters, 2006-09, Vol.89 (11)

2006

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Design and fabrication of a reliability test chip for 3D-TSV

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC), 2010, p.79-83

2010

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Charge injection and tunneling mechanism of solid state reactionsilicon nanocrystal film

Applied physics letters, 2006-09, Vol.89 (11), p.113119-113119-3

2006

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A Two-Step Oxidation Mediated Condensation Process for Ultrathin High Ge Content SiGe Epitaxial Films on Insulator

Electrochemical and solid-state letters, 2005, Vol.8 (7), p.G164

2005

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Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.42-43

2005

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Dry etching of AlxGa1-xN/GaN by CCl2F2 chemistry for device isolation

Physica status solidi. C, 2005-05, Vol.2 (7), p.2544-2547

2005

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Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

Journal of applied physics, 2007-06, Vol.101 (12), p.124313-124313-5

2007

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Response to "Comment on 'Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition'" [ Appl. Phys. Lett. 90 , 092108 ( 2007 ) ]

Applied physics letters, 2007-07, Vol.91 (4), p.046102-046102-1

2007

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Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films

Applied physics letters, 2006-12, Vol.89 (25)

2006

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Photon-induced conduction modulation in SiO2 thin films embedded with Ge nanocrystals

Applied physics letters, 2007-03, Vol.90 (10)

2007

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Influence of nanocrystal size on optical properties of Si nanocrystals embedded in Si O 2 synthesized by Si ion implantation

Journal of applied physics, 2007-05, Vol.101 (10), p.103525-103525-6

2007

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Work function tuning of metal nitride electrodes for advanced CMOS devices

Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Performance of silicon nanocrystal non-volatile memory devices under various programming mechanisms

Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation

Modular sensor chip design for package stress evaluation and reliability characterisation

Review - Characterisation and analysis of surface engineered thin films

Charge trapping phenomena of tetraethylorthosilicate thin film containing Si nanocrystals synthesized by solid-state reaction

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

Silicon Nanowire Arrays for Label-Free Detection of DNA

WSiN cap for Ohmic contacts to n-GaN with better morphology

Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors

Detection of MicroRNAs Using Target-Guided Formation of Conducting Polymer Nanowires in Nanogaps

Charge injection and tunneling mechanism of solid state reaction silicon nanocrystal film

Design and fabrication of a reliability test chip for 3D-TSV

Charge injection and tunneling mechanism of solid state reactionsilicon nanocrystal film

A Two-Step Oxidation Mediated Condensation Process for Ultrathin High Ge Content SiGe Epitaxial Films on Insulator

Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices

Dry etching of AlxGa1-xN/GaN by CCl2F2 chemistry for device isolation

Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

Response to "Comment on 'Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition'" [ Appl. Phys. Lett. 90 , 092108 ( 2007 ) ]

Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films

Photon-induced conduction modulation in SiO2 thin films embedded with Ge nanocrystals

Influence of nanocrystal size on optical properties of Si nanocrystals embedded in Si O 2 synthesized by Si ion implantation

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