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An efficient tetrazine photoluminescent layer used for organic solar cells down shifting

Synthetic metals, 2017-12, Vol.234, p.106-110

2017

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Transparent pentacene-based photoconductor: high photoconductivity effect

European physical journal. Applied physics, 2010-09, Vol.51 (3), p.33207

2010

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Focused ion beam micromachining and computation of polymeric photonic band gap

Journal of polymer science. Part B, Polymer physics, 2007-11, Vol.45 (21), p.2993-3002

2007

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Polymer gratings achieved by focused ion beam

Synthetic metals, 2002-03, Vol.127 (1), p.307-311

2002

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OTFT with Silk Screen Printed Drain and Source

Micro and nanosystems, 2009-03, Vol.1 (1), p.46-49

2009

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Optical waveguides etched in 6FDA-ODA by focused ion beam

Synthetic metals, 2001-10, Vol.124 (1), p.33-35

2001

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6FDA-ODA waveguides etched by ion shrinkage

Synthetic metals, 2000-11, Vol.115 (1), p.33-35

2000

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Different Gate Insulators for Organic Field Effect Transistors

Manufacturing Science and Technology, 2015-12, Vol.3 (5), p.249-252

2015

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Thermal assisted ion shrinkage (TAIS) of fluorinated polyimide for optical telecommunication devices

Optical materials, 1999-06, Vol.12 (2), p.225-228

1999

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Electronic monolithic interconnect with polyimide

Materials science in semiconductor processing, 2000-10, Vol.3 (5), p.419-425

2000

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Relevance of high brightness ion source and femtosecond laser, in the fundamental study of ion-polymer interactions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997, Vol.122 (3), p.368-373

1997

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Fluence and fluence rate effects on electrical conductivity and shrinkage in polyimide bombarded by an ion beam

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-02, Vol.107 (1-4), p.323-326

1996

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Implanted polymer junctions from highly compacted polypyrrole films

Synthetic metals, 1996-12, Vol.83 (3), p.201-203

1996

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Liquid-metal ion sources inducing conductivity in polyimide

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-05, Vol.111 (3), p.254-258

1996

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Optimization of the electrical conductivity of polypyrrole films electrogenerated on aluminium electrodes

Synthetic metals, 1996, Vol.76 (1), p.301-303

1996

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Self-development of cellulose nitrate in linear and nonlinear regimes by ion irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-03, Vol.65 (1-4), p.428-431

1992

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Plasmons as the primary mechanism of ion-induced modifications in polymers

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1999-05, Vol.79 (5), p.793-815

1999

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Relation between plasmons and the valence-band density of states in polymethylmethacrylate: Influence of ion irradiation on damage selectivity

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1996-05, Vol.73 (5), p.763-778

1996

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Field Effect Transistors Based on Composite Films of poly (4 vinyl phenol) with ZnO Nanoparticles

The International Journal of Engineering and Science, 2016-11, Vol.5 (11), p.68-73

2016

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Transparent all organic TFT fabrication by low cost process without clean room

IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics, 2006, p.4876-4881

2006

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The interface structure of polyimide guides etched by ion irradiation

Optical materials, 1998, Vol.9 (1), p.245-250

1998

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Schottky Barrier Diodes From Electrochemically Generated Polypyrrole-Aluminium Junctions

MRS proceedings, 1995, Vol.413, Article 595

1995

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Plasmons as the primary mechanism of ion-induced modifications in polymers

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1999-05, Vol.79 (5), p.793-815

P. Moliton, C. Jussiaux-Devilder, T, J.

1999

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2D polymeric devices with photonic band gap (PBG) for telecommunications at 1.55 /spl mu/m

2004 IEEE International Symposium on Industrial Electronics, 2004, Vol.2, p.1397-1402 vol. 2

2004

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An efficient tetrazine photoluminescent layer used for organic solar cells down shifting

Transparent pentacene-based photoconductor: high photoconductivity effect

Focused ion beam micromachining and computation of polymeric photonic band gap

Contacts, conflits et créations linguistiques

Polymer gratings achieved by focused ion beam

OTFT with Silk Screen Printed Drain and Source

Optical waveguides etched in 6FDA-ODA by focused ion beam

6FDA-ODA waveguides etched by ion shrinkage

Different Gate Insulators for Organic Field Effect Transistors

Thermal assisted ion shrinkage (TAIS) of fluorinated polyimide for optical telecommunication devices

Electronic monolithic interconnect with polyimide

Relevance of high brightness ion source and femtosecond laser, in the fundamental study of ion-polymer interactions

Fluence and fluence rate effects on electrical conductivity and shrinkage in polyimide bombarded by an ion beam

Implanted polymer junctions from highly compacted polypyrrole films

Liquid-metal ion sources inducing conductivity in polyimide

Optimization of the electrical conductivity of polypyrrole films electrogenerated on aluminium electrodes

Self-development of cellulose nitrate in linear and nonlinear regimes by ion irradiation

Plasmons as the primary mechanism of ion-induced modifications in polymers

Relation between plasmons and the valence-band density of states in polymethylmethacrylate: Influence of ion irradiation on damage selectivity

Field Effect Transistors Based on Composite Films of poly (4 vinyl phenol) with ZnO Nanoparticles

Transparent all organic TFT fabrication by low cost process without clean room

The interface structure of polyimide guides etched by ion irradiation

Schottky Barrier Diodes From Electrochemically Generated Polypyrrole-Aluminium Junctions

Plasmons as the primary mechanism of ion-induced modifications in polymers

2D polymeric devices with photonic band gap (PBG) for telecommunications at 1.55 /spl mu/m

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