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Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET

IEEE electron device letters, 2019-05, Vol.40 (5), p.666-669

2019

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Analysis of heavily boron-doped diamond Raman spectrum

Diamond and related materials, 2018-09, Vol.88, p.163-166

2018

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Insight into boron-doped diamond Raman spectra characteristic features

Carbon (New York), 2017-05, Vol.115, p.279-284

2017

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Characteristics of zirconium and niobium contacts on boron-doped diamond

Diamond and related materials, 2018-03, Vol.83, p.184-189

2018

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Peculiarities of high electric field conduction in p-type diamond

Applied physics letters, 2016-04, Vol.108 (15)

2016

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Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements

Solid-state electronics, 2024-04, Vol.214, Article 108868

2024

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Preconditioning of p-GaN power HEMT for reproducible Vth measurements

Microelectronics and reliability, 2023-05, Vol.144, Article 114955

2023

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Analysis of an ESD failure mechanism on a SiC MESFET

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2217-2221

2014

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Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation

Microelectronics and reliability, 2013-02, Vol.53 (2), p.221-228

2013

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Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches

Microelectronics and reliability, 2023-11, Vol.150, p.115172, Article 115172

2023

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Failure analysis of ESD-stressed SiC MESFET

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1542-1548

2015

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Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Microelectronics and reliability, 2017-09, Vol.76-77, p.500-506

2017

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Characterization and Optimization of Sub-32-nm FinFET Devices for ESD Applications

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3507-3516

2008

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Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

MRS advances, 2018-01, Vol.3 (33), p.1931-1935

2018

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Accelerated lifetime test of RF-MEMS switches under ESD stress

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1256-1259

2009

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A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance

Microelectronics and reliability, 2018-09, Vol.88-90, p.406-410

2018

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Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1103-1106

2009

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Transient voltage overshoot in TLP testing – Real or artifact?

Microelectronics and reliability, 2007-07, Vol.47 (7), p.1016-1024

2007

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New reliability model for power SiC MOSFET technologies under static and dynamic gate stress

Microelectronics and reliability, 2023-11, Vol.150, p.115190, Article 115190

2023

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Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency

IEEE journal of solid-state circuits, 2004-10, Vol.39 (10), p.1778-1782

2004

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Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), 2020, p.1-P.8

2020

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Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology

IEEE journal of solid-state circuits, 2001-09, Vol.36 (9), p.1373-1381

2001

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Understanding the Failure Mechanisms of Protection Diodes During System Level ESD: Toward Repetitive Stresses Robustness

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.108-113

2012

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Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation

Microelectronics and reliability, 2001-09, Vol.41 (9), p.1539-1544

2001

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A System-Level Electrostatic-Discharge-Protection Modeling Methodology for Time-Domain Analysis

IEEE transactions on electromagnetic compatibility, 2013-02, Vol.55 (1), p.45-57

2013

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Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET

Analysis of heavily boron-doped diamond Raman spectrum

Insight into boron-doped diamond Raman spectra characteristic features

Characteristics of zirconium and niobium contacts on boron-doped diamond

Peculiarities of high electric field conduction in p-type diamond

Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements

Preconditioning of p-GaN power HEMT for reproducible Vth measurements

Analysis of an ESD failure mechanism on a SiC MESFET

Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation

Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches

Failure analysis of ESD-stressed SiC MESFET

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Characterization and Optimization of Sub-32-nm FinFET Devices for ESD Applications

Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

Accelerated lifetime test of RF-MEMS switches under ESD stress

A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance

Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)

Transient voltage overshoot in TLP testing – Real or artifact?

New reliability model for power SiC MOSFET technologies under static and dynamic gate stress

Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency

Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter

Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology

Understanding the Failure Mechanisms of Protection Diodes During System Level ESD: Toward Repetitive Stresses Robustness

Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation

A System-Level Electrostatic-Discharge-Protection Modeling Methodology for Time-Domain Analysis

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