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In-vessel surface layer evolution during plasma–wall interaction in the Globus-M spherical tokamak

Nuclear fusion, 2009-09, Vol.49 (9), p.95022

2009

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Rearrangement of the optical properties of a-SiOx: H films after crystallization of silicon nanoclusters

Journal of non-crystalline solids, 2021-11, Vol.571, p.121053, Article 121053

2021

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Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase ( = 21.5 mol %)

Semiconductors (Woodbury, N.Y.), 2019-11, Vol.53 (11), p.1514-1523

2019

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Field-Effect Transistors with High Mobility and Small Hysteresis of Transfer Characteristics Based on C[H.sub.3]N[H.sub.3]Pb[Br.sub.3] Films

Physics of the solid state, 2017-12, Vol.59 (12), p.2486

2017

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Photoluminescence and Photoconductivity of Lead Halide Perovskite Films Modified with Mixed Cellulose Esters-=SUP=-1-=/SUP

Žurnal tehničeskoj fiziki, 2021, Vol.91 (6), p.985

2021

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Field-effect transistor structures on the basis of poly

Physics of the solid state, 2016-09, Vol.58 (9), p.1882

2016

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On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-Si[O.sub.x]: H with time-modulated dc magnetron plasma

Semiconductors (Woodbury, N.Y.), 2016-04, p.530

2016

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Temperature and concentration dependences of the photoluminescence of MEH-PPV polymer composite films with ZnO nanoparticles

Physics of the solid state, 2014-02, Vol.56 (2), p.405-411

2014

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Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM, and nickel nanoparticles

Physics of the solid state, 2016-09, Vol.58 (9), p.1882-1890

2016

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Surface texture of single-crystal silicon oxidized under a thin [V.sub.2][O.sub.5] layer

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.104

2017

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Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass -=SUP=--=/SUP

Fizika i tehnika poluprovodnikov, 2019, Vol.53 (8), p.1140

2019

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Switching and memory effects in composite films of semiconducting polymers with particles of graphene and graphene oxide

Physics of the solid state, 2015-08, Vol.57 (8), p.1678-1684

2015

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Photoinduced defects in a-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm

Technical physics, 2015-09, Vol.60 (9), p.1353-1360

2015

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Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-Si[O.sub.x]:H Er,O, by dc-magnetron deposition

Semiconductors (Woodbury, N.Y.), 2011-12, Vol.45 (12), p.1604

2011

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Recrystallized graphite behavior as the first wall material in Globus-M spherical tokamak

Journal of nuclear materials, 2009-04, Vol.386, p.708-711

2009

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The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals

Semiconductors (Woodbury, N.Y.), 2010-04, Vol.44 (4), p.426-431

2010

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Практический метод исследования водородных связей в бумаге

Известия СПбЛТА, 2020-03 (230())

2020

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Amorphous carbon: how much of free hydrogen?

Diamond and related materials, 2000-04, Vol.9 (3-6), p.707-710

2000

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Electrical and photoelectric properties of a-Si:H layered films: The influence of thermal annealing

Semiconductors (Woodbury, N.Y.), 2001-03, Vol.35 (3), p.353-356

2001

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Structure and properties of a-Si:H films grown by cyclic deposition

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (4), p.477-480

2000

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A model of density of states in amorphous Si, C and SiC from time-of-flight measurement

Diamond and related materials, 1994-11, Vol.3 (11), p.1356-1359

1994

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Deposition of amorphous hydrogenated semiconductors by magnetron assisted silane decomposition

Physica. B, Condensed matter, 1991-04, Vol.170 (1-4), p.571-573

1991

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The Li Insertion/Extraction Characteristics of Amorphous Silicon Thin Films

Chemical and Biochemical Engineering Quarterly, 2007-03, Vol.21 (1), p.83

2007

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Deposition of amorphous hydrogenated semiconductors by magnetron assisted silane decomposition

Hydrogen in Semiconductors:Bulk and Surface Properties, 1991, p.571-573

1991

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In-vessel surface layer evolution during plasma–wall interaction in the Globus-M spherical tokamak

Rearrangement of the optical properties of a-SiOx: H films after crystallization of silicon nanoclusters

Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase ( = 21.5 mol %)

Field-Effect Transistors with High Mobility and Small Hysteresis of Transfer Characteristics Based on C[H.sub.3]N[H.sub.3]Pb[Br.sub.3] Films

Photoluminescence and Photoconductivity of Lead Halide Perovskite Films Modified with Mixed Cellulose Esters-=SUP=-1-=/SUP

Field-effect transistor structures on the basis of poly

On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-Si[O.sub.x]: H with time-modulated dc magnetron plasma

Temperature and concentration dependences of the photoluminescence of MEH-PPV polymer composite films with ZnO nanoparticles

Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM, and nickel nanoparticles

Surface texture of single-crystal silicon oxidized under a thin [V.sub.2][O.sub.5] layer

Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass -=SUP=--=/SUP

Switching and memory effects in composite films of semiconducting polymers with particles of graphene and graphene oxide

Photoinduced defects in a-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm

Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-Si[O.sub.x]:H Er,O, by dc-magnetron deposition

Recrystallized graphite behavior as the first wall material in Globus-M spherical tokamak

The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals

Практический метод исследования водородных связей в бумаге

Amorphous carbon: how much of free hydrogen?

Electrical and photoelectric properties of a-Si:H layered films: The influence of thermal annealing

Structure and properties of a-Si:H films grown by cyclic deposition

A model of density of states in amorphous Si, C and SiC from time-of-flight measurement

Deposition of amorphous hydrogenated semiconductors by magnetron assisted silane decomposition

The Li Insertion/Extraction Characteristics of Amorphous Silicon Thin Films

Deposition of amorphous hydrogenated semiconductors by magnetron assisted silane decomposition

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