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Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers

IEEE photonics technology letters, 2005-05, Vol.17 (5), p.962-964

2005

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Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3354-3359

2008

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Analysis of the Survivability of GaN Low-Noise Amplifiers

IEEE transactions on microwave theory and techniques, 2007-01, Vol.55 (1), p.37-43

2007

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High-Brightness Quantum Well Tapered Lasers

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.1009-1020

2009

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Synthesis of Novel Retinoid X Receptor-Selective Retinoids

Journal of organic chemistry, 2001-08, Vol.66 (17), p.5772-5782

2001

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AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

IEEE electron device letters, 2009-09, Vol.30 (9), p.901-903

2009

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Freestanding 2-in GaN layers using lateral overgrowth with HVPE

Journal of crystal growth, 2008-03, Vol.310 (5), p.911-915

2008

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Wavelength-Stabilized Compact Diode Laser System on a Microoptical Bench With 1.5-W Optical Output Power at 671 nm

IEEE photonics technology letters, 2008-10, Vol.20 (19), p.1627-1629

2008

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Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31 ^ Emitting at 670 nm

IEEE photonics technology letters, 2008-04, Vol.20 (8), p.575-577

2008

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Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1223-1227

2005

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Effect of External Mechanical Stress on DC Performance and Reliability of Integrated E/D GaN HEMTs

IEEE transactions on semiconductor manufacturing, 2018-11, Vol.31 (4), p.419-425

2018

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Highly Rugged 30 GHz GaN Low-Noise Amplifiers

IEEE microwave and wireless components letters, 2009-04, Vol.19 (4), p.251-253

2009

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3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1188-1193

2007

Volltextzugriff (PDF)

Tri-carbon defects in carbon doped GaN

Applied physics letters, 2018-12, Vol.113 (26)

2018

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Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

IEEE electron device letters, 2012-03, Vol.33 (3), p.357-359

2012

Volltextzugriff (PDF)

Optical in-well pumping of a semiconductor disk laser with high optical efficiency

IEEE journal of quantum electronics, 2005-12, Vol.41 (12), p.1439-1449

2005

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Theoretical and experimental investigations of the limits to the maximum output power of laser diodes

New journal of physics, 2010-08, Vol.12 (8), p.085007

2010

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High-power high-efficiency 1150-nm quantum-well laser

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1217-1222

2005

Volltextzugriff (PDF)

Stereoselection in the Prins-Pinacol Synthesis of 2,2-Disubstituted 4-Acyltetrahydrofurans. Enantioselective Synthesis of (−)-Citreoviral

Organic letters, 2000-01, Vol.2 (2), p.223-226

2000

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Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers

Applied physics letters, 2017-06, Vol.110 (26)

2017

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Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

Journal of crystal growth, 2016-12, Vol.456, p.97-100

2016

Volltextzugriff (PDF)

Combination of Low-Index Quantum Barrier and Super Large Optical Cavity Designs for Ultranarrow Vertical Far-Fields From High-Power Broad-Area Lasers

IEEE journal of selected topics in quantum electronics, 2011-11, Vol.17 (6), p.1715-1722

2011

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Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm

Applied physics letters, 2023-06, Vol.122 (26)

2023

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High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.901-908

2009

Volltextzugriff (PDF)

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Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

Analysis of the Survivability of GaN Low-Noise Amplifiers

High-Brightness Quantum Well Tapered Lasers

Synthesis of Novel Retinoid X Receptor-Selective Retinoids

AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

Freestanding 2-in GaN layers using lateral overgrowth with HVPE

Wavelength-Stabilized Compact Diode Laser System on a Microoptical Bench With 1.5-W Optical Output Power at 671 nm

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31 ^ Emitting at 670 nm

Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W

Effect of External Mechanical Stress on DC Performance and Reliability of Integrated E/D GaN HEMTs

Highly Rugged 30 GHz GaN Low-Noise Amplifiers

3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

Tri-carbon defects in carbon doped GaN

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Optical in-well pumping of a semiconductor disk laser with high optical efficiency

Theoretical and experimental investigations of the limits to the maximum output power of laser diodes

High-power high-efficiency 1150-nm quantum-well laser

Stereoselection in the Prins-Pinacol Synthesis of 2,2-Disubstituted 4-Acyltetrahydrofurans. Enantioselective Synthesis of (−)-Citreoviral

Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers

Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

Combination of Low-Index Quantum Barrier and Super Large Optical Cavity Designs for Ultranarrow Vertical Far-Fields From High-Power Broad-Area Lasers

Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm

High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays

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