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Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1180-1188

2015

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InP DHBT Process in Transferred-Substrate Technology With f and f Over 400 GHz

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.1897-1903

2009

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IEEE_Xplore

Efficiency-optimized monolithic frequency stabilization of high-power diode lasers

Journal of physics. D, Applied physics, 2013-01, Vol.46 (1), p.13001-1-20

2013

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Traveling-Wave Amplifiers in Transferred Substrate InP-HBT Technology

IEEE transactions on microwave theory and techniques, 2009-09, Vol.57 (9), p.2114-2121

2009

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IEEE_Xplore

Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers

Applied physics. B, Lasers and optics, 2014-07, Vol.116 (1), p.175-181

2014

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Hydride vapor phase epitaxy of GaN boules using high growth rates

Journal of crystal growth, 2010-09, Vol.312 (18), p.2537-2541

2010

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Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

Journal of crystal growth, 2011-01, Vol.315 (1), p.5-9

2011

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Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Microelectronics and reliability, 2011-02, Vol.51 (2), p.217-223

2011

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In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975 nm DFB-BA diode lasers

Journal of crystal growth, 2013-05, Vol.370, p.226-229

2013

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Well width study of InGaN multiple quantum wells for blue–green emitter

Journal of crystal growth, 2010-11, Vol.312 (23), p.3428-3433

2010

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Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers

Applied physics letters, 2017-06, Vol.110 (26)

2017

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Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

Journal of crystal growth, 2016-12, Vol.456, p.97-100

2016

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Optimization of high power AlGaInP laser diodes at 626 nm

Optical and quantum electronics, 2024-03, Vol.56 (3), Article 419

2024

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Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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Extended cavity diode laser master-oscillator-power-amplifier for operation of an iodine frequency reference on a sounding rocket

Applied optics (2004), 2020-01, Vol.59 (2), p.253-262

2020

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Precise prediction of optical behaviour of mechanically stressed edge emitting GaAs devices

Optical and quantum electronics, 2022-11, Vol.54 (11), Article 728

2022

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Spatial filtering of a six-wavelength DBR-RW laser in a MOPA system

Applied optics (2004), 2021-03, Vol.60 (7), p.1864-1870

2021

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Tri-carbon defects in carbon doped GaN

Applied physics letters, 2018-12, Vol.113 (26)

2018

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Theoretical and experimental investigations of the limits to the maximum output power of laser diodes

New journal of physics, 2010-08, Vol.12 (8), p.085007

2010

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Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy

Journal of applied physics, 2013-03, Vol.113 (9)

2013

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975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers

Applied physics letters, 2010-03, Vol.96 (13)

2010

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Theoretical investigation of anti-index guiding inactively Q-switched two-section diode lasers

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35019

2019

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Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser

Optics letters, 2015-05, Vol.40 (9), p.2127-2129

2015

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Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers

Electronics letters, 2018-05, Vol.54 (10), p.640-641

2018

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25-W Monolithic Spectrally Stabilized 975-nm Minibars for Dense Spectral Beam Combining

IEEE photonics technology letters, 2015-08, Vol.27 (15), p.1675-1678

2015

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IEEE_Xplore

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Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN

InP DHBT Process in Transferred-Substrate Technology With f and f Over 400 GHz

Efficiency-optimized monolithic frequency stabilization of high-power diode lasers

Traveling-Wave Amplifiers in Transferred Substrate InP-HBT Technology

Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers

Hydride vapor phase epitaxy of GaN boules using high growth rates

Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975 nm DFB-BA diode lasers

Well width study of InGaN multiple quantum wells for blue–green emitter

Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers

Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

Optimization of high power AlGaInP laser diodes at 626 nm

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

Extended cavity diode laser master-oscillator-power-amplifier for operation of an iodine frequency reference on a sounding rocket

Precise prediction of optical behaviour of mechanically stressed edge emitting GaAs devices

Spatial filtering of a six-wavelength DBR-RW laser in a MOPA system

Tri-carbon defects in carbon doped GaN

Theoretical and experimental investigations of the limits to the maximum output power of laser diodes

Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy

975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers

Theoretical investigation of anti-index guiding inactively Q-switched two-section diode lasers

Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser

Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers

25-W Monolithic Spectrally Stabilized 975-nm Minibars for Dense Spectral Beam Combining

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