UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

On the use of dimeric antimony in molecular beam epitaxy

Journal of crystal growth, 1995-11, Vol.156 (1), p.30-38

1995

Volltextzugriff (PDF)

High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates

Applied physics letters, 1995-01, Vol.66 (4), p.442-444

1995

Volltextzugriff (PDF)

High reflectivity 1.55 μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy

Applied physics letters, 1994-02, Vol.64 (6), p.690-691

1994

Volltextzugriff (PDF)

Oscillator strengths, quantum efficiencies, and laser cross sections of Yb(3+) and Er(3+) in III-V compounds

Journal of applied physics, 1989-10, Vol.66, p.3952-3955

1989

Volltextzugriff (PDF)

Secondary ion mass spectrometry generates swelling of GaSb : depth resolution and secondary ion yields

Journal of applied physics, 1993-03, Vol.73 (5), p.2051-2056

1993

Volltextzugriff (PDF)

Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors

Journal of physics. Condensed matter, 1990-01, Vol.2 (2), p.479-483

1990

Volltextzugriff (PDF)

ErSb/GaSb(001) and GaSb/ErSb/GaSb(001) heterostructures and [ErSb,GaSb] superlattices: Molecular beam epitaxy growth and characterization

Journal of applied physics, 1994-03, Vol.75 (6), p.2876-2883

1994

Volltextzugriff (PDF)

Swelling of GaSb at low energies (1.3–14.5 keV)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-06, Vol.80, p.543-547

1993

Volltextzugriff (PDF)

Feasibility of 1.5 μm staircase solid state photomultipliers in the AlGaSb/GaInAsSb system

Semiconductor science and technology, 1996-02, Vol.11 (2), p.226-230

1996

Volltextzugriff (PDF)

Selenium residual doping of (AlGa)Sb/GaSb epilayers grown by molecular beam epitaxy

Journal of applied physics, 1992-06, Vol.71 (12), p.5847-5852

1992

Volltextzugriff (PDF)

Optical properties of GaSbAlSb heterostructures grown by molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-11, Vol.21 (2), p.185-188

1993

Volltextzugriff (PDF)

Evaluation of high quality berlinite crystals grown in sulphuric acid medium

Journal of crystal growth, 1990, Vol.104 (3), p.713-726

1990

Volltextzugriff (PDF)

Oscillator strengths, quantum efficiencies, and laser cross sections of Yb3+ and Er3+ in III-V compounds

Journal of applied physics, 1989-10, Vol.66 (8), p.3952-3955

1989

Volltextzugriff (PDF)

Synthesis, crystal growth and characterization of InP

Journal of crystal growth, 1983-11, Vol.64 (1), p.23-31

1983

Volltextzugriff (PDF)

Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP)

Semiconductor science and technology, 1991-09, Vol.6 (9), p.916-923

1991

Volltextzugriff (PDF)

Electrical behavior of Yb ion in p- and n-type InP

Applied physics letters, 1992-02, Vol.60 (8), p.983-985

1992

Volltextzugriff (PDF)

X-ray topography and tem studies of (Ga,Fe)-double-doped LEC grown InP crystals

Journal of crystal growth, 1987-03, Vol.82 (3), p.487-494

1987

Volltextzugriff (PDF)

Semi-insulating InP co-doped with Ti and Hg

Semiconductor science and technology, 1987-02, Vol.2 (2), p.78-82

1987

Volltextzugriff (PDF)

Croissance par voie hydrothermale de monocristaux de cinabre de dimensions importantes

Journal of crystal growth, 1971-07, Vol.10 (2), p.170-174

1971

Volltextzugriff (PDF)

Chromium-doped p-type semi-insulating InP

Semiconductor science and technology, 1988-05, Vol.3 (5), p.464-468

1988

Volltextzugriff (PDF)

Synthesis, lattice parameters and thermal expansion coefficients of rhodium arsenide Rh2As and some substituted compounds

Journal of crystal growth, 1986-07, Vol.76 (1), p.135-141

1986

Volltextzugriff (PDF)

Electrical activity of Yb in InP

Electronics letters, 1988-11, Vol.24 (23), p.1446-1447

1988

Volltextzugriff (PDF)

Etude de la solubilite du phosphate d'aluminium (AlPO4) dans des solutions hydrothermales d'acide orthophosphorique H3PO4

Materials research bulletin, 1979-05, Vol.14 (5), p.603-612

1979

Volltextzugriff (PDF)

Properties of InP doped with 4d ions

Semiconductor science and technology, 1987-12, Vol.2 (12), p.772-778

1987

Volltextzugriff (PDF)

Electrical and Optical Properties of Yb, Er doped GaAs

MRS proceedings, 1993, Vol.301, Article 163

1993

Volltextzugriff (PDF)

1 – 25 von 123

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(78)
Mit Volltextzugriff
(71)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(36)
Humans
(33)
Physics
(32)
Physical Sciences
(26)
Female
(22)
Exact Sciences And Technology
(20)
Technology
(19)
Male
(18)
Materials Science
(15)
Materials Science, Multidisciplinary
(15)
Physics, Condensed Matter
(13)
Physics, Applied
(11)
Infant
(10)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(9)
Infant, Newborn
(9)
Child
(8)
Condensed Matter: Structure, Mechanical And Thermal Properties
(8)
Syndrome
(8)
Adult
(7)
Crystallography
(7)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

On the use of dimeric antimony in molecular beam epitaxy

High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates

High reflectivity 1.55 μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy

Oscillator strengths, quantum efficiencies, and laser cross sections of Yb(3+) and Er(3+) in III-V compounds

Secondary ion mass spectrometry generates swelling of GaSb : depth resolution and secondary ion yields

Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors

ErSb/GaSb(001) and GaSb/ErSb/GaSb(001) heterostructures and [ErSb,GaSb] superlattices: Molecular beam epitaxy growth and characterization

Swelling of GaSb at low energies (1.3–14.5 keV)

Feasibility of 1.5 μm staircase solid state photomultipliers in the AlGaSb/GaInAsSb system

Selenium residual doping of (AlGa)Sb/GaSb epilayers grown by molecular beam epitaxy

Optical properties of GaSbAlSb heterostructures grown by molecular beam epitaxy

Evaluation of high quality berlinite crystals grown in sulphuric acid medium

Oscillator strengths, quantum efficiencies, and laser cross sections of Yb3+ and Er3+ in III-V compounds

Synthesis, crystal growth and characterization of InP

Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP)

Electrical behavior of Yb ion in p- and n-type InP

X-ray topography and tem studies of (Ga,Fe)-double-doped LEC grown InP crystals

Semi-insulating InP co-doped with Ti and Hg

Croissance par voie hydrothermale de monocristaux de cinabre de dimensions importantes

Chromium-doped p-type semi-insulating InP

Synthesis, lattice parameters and thermal expansion coefficients of rhodium arsenide Rh2As and some substituted compounds

Electrical activity of Yb in InP

Etude de la solubilite du phosphate d'aluminium (AlPO4) dans des solutions hydrothermales d'acide orthophosphorique H3PO4

Properties of InP doped with 4d ions

Electrical and Optical Properties of Yb, Er doped GaAs

Suchergebnisse filtern