UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers

Journal of applied physics, 2017-10, Vol.122 (15)

2017

Volltextzugriff (PDF)

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

Semiconductor science and technology, 2013-03, Vol.28 (3), p.35006

2013

Volltextzugriff (PDF)

On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

Applied physics letters, 2011-01, Vol.98 (1), p.011914-011914-3

2011

Volltextzugriff (PDF)

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Journal of applied physics, 2003-11, Vol.94 (10), p.6499-6507

2003

Volltextzugriff (PDF)

Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN

Journal of alloys and compounds, 2015-03, Vol.625, p.271-276

2015

Volltextzugriff (PDF)

The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

Journal of applied physics, 2009-02, Vol.105 (3), p.033701-033701-8

2009

Volltextzugriff (PDF)

GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range

Journal of applied physics, 2011-10, Vol.110 (8)

2011

Volltextzugriff (PDF)

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Journal of crystal growth, 2009-03, Vol.311 (7), p.2002-2005

2009

Volltextzugriff (PDF)

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Journal of crystal growth, 2007-11, Vol.309 (1), p.1-7

2007

Volltextzugriff (PDF)

Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures

Journal of applied physics, 2005-01, Vol.97 (2)

2005

Volltextzugriff (PDF)

Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties

Journal of applied physics, 2011-03, Vol.109 (5), p.053514-053514-6

2011

Volltextzugriff (PDF)

Heteroepitaxial growth of thin InAs layers on GaAs(1 0 0) misoriented substrates: A structural and morphological comparison

Physica. E, Low-dimensional systems & nanostructures, 2009-10, Vol.41 (10), p.1779-1783

2009

Volltextzugriff (PDF)

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1)

Journal of crystal growth, 2000-07, Vol.217 (1), p.13-25

2000

Volltextzugriff (PDF)

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Journal of crystal growth, 2008-03, Vol.310 (5), p.948-954

2008

Volltextzugriff (PDF)

Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

Physica status solidi. C, 2008-05, Vol.5 (6), p.1983-1985

2008

Volltextzugriff (PDF)

Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

Applied physics letters, 2000-10, Vol.77 (14), p.2189-2191

2000

Volltextzugriff (PDF)

AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1)

Journal of crystal growth, 2005-05, Vol.278 (1), p.393-396

2005

Volltextzugriff (PDF)

Growth of GaN based structures on focused ion beam patterned templates

Physica status solidi. C, 2011-05, Vol.8 (5), p.1516-1519

2011

Volltextzugriff (PDF)

Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

Journal of crystal growth, 2003-11, Vol.258 (3), p.232-250

2003

Volltextzugriff (PDF)

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Materials science in semiconductor processing, 2009-02, Vol.12 (1), p.16-20

2009

Volltextzugriff (PDF)

Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

Applied physics letters, 2003-03, Vol.82 (9), p.1386-1388

2003

Volltextzugriff (PDF)

X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

Applied physics. A, Materials science & processing, 2007-07, Vol.88 (1), p.61-64

2007

Volltextzugriff (PDF)

Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes

Journal of crystal growth, 2005-12, Vol.285 (4), p.450-458

2005

Volltextzugriff (PDF)

Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy

Applied physics letters, 2003-12, Vol.83 (25), p.5139-5141

2003

Volltextzugriff (PDF)

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

Applied physics letters, 2002-01, Vol.80 (2), p.174-176

2002

Volltextzugriff (PDF)

1 – 25 von 42

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(33)
Mit Volltextzugriff
(40)

Publikationsform

Sprache

Englisch
(40)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN

The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures

Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties

Heteroepitaxial growth of thin InAs layers on GaAs(1 0 0) misoriented substrates: A structural and morphological comparison

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1)

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1)

Growth of GaN based structures on focused ion beam patterned templates

Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes

Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

Suchergebnisse filtern