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Exceptional phonon point versus free phonon coupling in Zn1−xBexTe under pressure: an experimental and ab initio Raman study

Scientific reports, 2022-01, Vol.12 (1), p.753-753, Article 753

2022

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Vibrational-mechanical properties of the highly-mismatched Cd1−xBexTe semiconductor alloy: experiment and ab initio calculations

Scientific reports, 2023-09, Vol.13 (1), p.14571-14571, Article 14571

2023

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Raman study of Cd1−xZnxTe phonons and phonon–polaritons—Experiment and ab initio calculations

Journal of applied physics, 2023-02, Vol.133 (6)

2023

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Multi-phonon (percolation) behavior and local clustering of CdxZn1−xSe-cubic mixed crystals (x ≤ 0.3): A Raman–ab initio study

Journal of applied physics, 2019-09, Vol.126 (10)

2019

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Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition

Scientific reports, 2020-11, Vol.10 (1), p.19803-19803, Article 19803

2020

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Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs. ab initio calculations

Journal of applied physics, 2017-02, Vol.121 (8)

2017

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Electronic structure and Jahn–Teller instabilities in a single vacancy in Ge

Journal of physics. Condensed matter, 2005-12, Vol.17 (48), p.L521-L527

2005

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Erratum: “Raman study of Cd1−xZnxTe phonons and phonon-polaritons – Experiment and ab initio calculations” [J. Appl. Phys. 133, 065701 (2023)]

Journal of applied physics, 2023-04, Vol.133 (13)

2023

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Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme and ab initio calculations

Physical review. B, Condensed matter and materials physics, 2012-07, Vol.86 (4), Article 045201

2012

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Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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Electronic structure of Zn, Cu and Ni impurities in germanium

Journal of physics. Condensed matter, 2011-02, Vol.23 (6), p.065802-6

2011

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A first-principles model of copper-boron interactions in Si: implications for the light-induced degradation of solar Si

Journal of physics. Condensed matter, 2017-02, Vol.29 (6), p.065701-065701

2017

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Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Born effective charges of Cu2ZnSnS4 quaternary compound: First principles calculations

Thin solid films, 2013-05, Vol.535, p.311-313

2013

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Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon

Physica status solidi. A, Applications and materials science, 2011-03, Vol.208 (3), p.568-571

2011

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Electrical activity of chalcogen-hydrogen defects in silicon

Physical review. B, Condensed matter, 2003, Vol.67 (3), Article 035205

2003

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Oxygen defects in irradiated germanium

Journal of materials science. Materials in electronics, 2007-07, Vol.18 (7), p.781-786

2007

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Formation of interstitial carbon–interstitial oxygen complexes in silicon: Local vibrational mode spectroscopy and density functional theory

Physical review. B, Condensed matter and materials physics, 2008-10, Vol.78 (15), Article 155203

2008

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Ab-initio modeling of carbon nanotubes functionalized with pyrrolidine

Physica status solidi. C, 2013-08, Vol.10 (7-8), p.1163-1166

2013

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Ab-initio vibrational properties of SiGe alloys

Thin solid films, 2008-11, Vol.517 (1), p.395-397

2008

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Electronic structural details of donor–vacancy complexes in Si-doped Ge and Ge-doped Si

Thin solid films, 2010-02, Vol.518 (9), p.2381-2385

2010

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Formation energy and migration barrier of a Ge vacancy from ab initio studies

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.498-502

2006

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Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes

Physical review. B, Condensed matter and materials physics, 2004-08, Vol.70 (8), p.085201.1-085201.7, Article 085201

2004

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Erratum: “Raman study of Cd 1− x Zn x Te phonons and phonon-polaritons – Experiment and ab initio calculations” [J. Appl. Phys. 133, 065701 (2023)]

Journal of applied physics, 2023-04, Vol.133 (13), p.139901

2023

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Ab-initio modeling of carbon and carbon–hydrogen defects in InAs

Physica. B, Condensed matter, 2007-12, Vol.401, p.275-277

2007

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Exceptional phonon point versus free phonon coupling in Zn1−xBexTe under pressure: an experimental and ab initio Raman study

Vibrational-mechanical properties of the highly-mismatched Cd1−xBexTe semiconductor alloy: experiment and ab initio calculations

Raman study of Cd1−xZnxTe phonons and phonon–polaritons—Experiment and ab initio calculations

Multi-phonon (percolation) behavior and local clustering of CdxZn1−xSe-cubic mixed crystals (x ≤ 0.3): A Raman–ab initio study

Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition

Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs. ab initio calculations

Electronic structure and Jahn–Teller instabilities in a single vacancy in Ge

Erratum: “Raman study of Cd1−xZnxTe phonons and phonon-polaritons – Experiment and ab initio calculations” [J. Appl. Phys. 133, 065701 (2023)]

Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme and ab initio calculations

Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations

Electronic structure of Zn, Cu and Ni impurities in germanium

A first-principles model of copper-boron interactions in Si: implications for the light-induced degradation of solar Si

Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

Born effective charges of Cu2ZnSnS4 quaternary compound: First principles calculations

Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon

Electrical activity of chalcogen-hydrogen defects in silicon

Oxygen defects in irradiated germanium

Formation of interstitial carbon–interstitial oxygen complexes in silicon: Local vibrational mode spectroscopy and density functional theory

Ab-initio modeling of carbon nanotubes functionalized with pyrrolidine

Ab-initio vibrational properties of SiGe alloys

Electronic structural details of donor–vacancy complexes in Si-doped Ge and Ge-doped Si

Formation energy and migration barrier of a Ge vacancy from ab initio studies

Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes

Erratum: “Raman study of Cd 1− x Zn x Te phonons and phonon-polaritons – Experiment and ab initio calculations” [J. Appl. Phys. 133, 065701 (2023)]

Ab-initio modeling of carbon and carbon–hydrogen defects in InAs

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