UB Paderborn / Katalog / Suche / in CDI

Quantum Dots for Single- and Entangled-Photon Emitters

IEEE photonics journal, 2009-06, Vol.1 (1), p.58-68

2009

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Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various [delta]--n-Layer Profile Widths

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.44

2018

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Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.664-666

2018

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The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping

Journal of physics. Conference series, 2017-06, Vol.864 (1), p.12051

2017

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Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping

Semiconductors (Woodbury, N.Y.), 2014-05, Vol.48 (5), p.666-674

2014

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Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.224-228

2015

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Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate

Journal of communications technology & electronics, 2017-03, Vol.62 (3), p.309-313

2017

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MBE-grown InSb photodetector arrays

Technical physics, 2017-06, Vol.62 (6), p.915-919

2017

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Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1399-1402

2017

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Determination of Electron Temperature in DA-pHEMT Heterostructures by Shubnikov – de Haas Oscillation Method

Russian physics journal, 2018-11, Vol.61 (7), p.1202-1209

2018

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Electrically driven single quantum dot polarised single photon emitter

Electronics letters, 2006-06, Vol.42 (13), p.774-775

2006

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High-quality structures with InAs/Al 0.9Ga 0.1As QDs produced by droplet epitaxy

Journal of crystal growth, 2011, Vol.337 (1), p.93-96

2011

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High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

Journal of crystal growth, 2011-12, Vol.337 (1), p.93-96

2011

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Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.33-38

2015

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Single-mode vertical-cavity surface emitting lasers for [sup.87]Rb-based chip-scale atomic clock

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1422

2010

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Magnetotransport properties of two-dimensional electron gas on cylindrical surface

Physica. E, Low-dimensional systems & nanostructures, 2004-06, Vol.23 (1), p.171-176

2004

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Recombination of charge carriers in the GaAs-based p-i-n diode

Semiconductors (Woodbury, N.Y.), 2010-10, Vol.44 (10), p.1362-1364

2010

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Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1427-1429

2010

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Raman study of self-assembled InAs quantum dots embedded in AlAs: influence of growth temperature

Physica. E, Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2), p.199-202

2002

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Microscopic parameters of materials containing GaN/AlN and InAs/AlAs heterostructures

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005-05, Vol.543 (1), p.188-193

2005

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Millisecond fluorescence in InAs quantum dots embedded in AlAs

Physica. E, Low-dimensional systems & nanostructures, 2004, Vol.20 (3), p.282-285

2004

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Magnetoresistance oscillations due to Zener tunneling and microwave radiation in a 2D electron gas in GaAs quantum well with AlAs/GaAs superlattices barriers

Physica. E, Low-dimensional systems & nanostructures, 2006-08, Vol.34 (1), p.97-99

2006

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Optical phonons in InAs and AlAs quantum dot structures

Applied surface science, 2004-07, Vol.234 (1), p.45-49

2004

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Decay rates of exciton and phonon-assisted recombination in asymmetric GaAs/AlAs type II superlattices

Applied surface science, 2003-06, Vol.216 (1), p.625-629

2003

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Effect of the low-temperature heating on formation and evolution of defects in PHEMT AlGaAs/InGaAs structures exposed by CF4 plasma

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.1099-1102

2003

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Quantum Dots for Single- and Entangled-Photon Emitters

Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various [delta]--n-Layer Profile Widths

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping

Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping

Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate

MBE-grown InSb photodetector arrays

Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity

Determination of Electron Temperature in DA-pHEMT Heterostructures by Shubnikov – de Haas Oscillation Method

Electrically driven single quantum dot polarised single photon emitter

High-quality structures with InAs/Al 0.9Ga 0.1As QDs produced by droplet epitaxy

High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots

Single-mode vertical-cavity surface emitting lasers for [sup.87]Rb-based chip-scale atomic clock

Magnetotransport properties of two-dimensional electron gas on cylindrical surface

Recombination of charge carriers in the GaAs-based p-i-n diode

Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons

Raman study of self-assembled InAs quantum dots embedded in AlAs: influence of growth temperature

Microscopic parameters of materials containing GaN/AlN and InAs/AlAs heterostructures

Millisecond fluorescence in InAs quantum dots embedded in AlAs

Magnetoresistance oscillations due to Zener tunneling and microwave radiation in a 2D electron gas in GaAs quantum well with AlAs/GaAs superlattices barriers

Optical phonons in InAs and AlAs quantum dot structures

Decay rates of exciton and phonon-assisted recombination in asymmetric GaAs/AlAs type II superlattices

Effect of the low-temperature heating on formation and evolution of defects in PHEMT AlGaAs/InGaAs structures exposed by CF4 plasma

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