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Effects of ternary elements on the ductility of TiAl

Canadian metallurgical quarterly, 2016-04, Vol.55 (2), p.156-160

2016

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Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

Applied physics. B, Lasers and optics, 2010-03, Vol.98 (4), p.773-778

2010

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Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

Nanoscale research letters, 2011-01, Vol.6 (1), p.1-5, Article 37

2011

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Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers

IEEE photonics journal, 2010-08, Vol.2 (4), p.630-635

2010

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ERCC polymorphisms and risk of osteosarcoma: a meta-analysis

European review for medical and pharmacological sciences, 2018-10, Vol.22 (20), p.6658

2018

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Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy

Nanotechnology, 2008-09, Vol.19 (36), p.365604-365604 (6)

2008

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Investigating ego modules and pathways in osteosarcoma by integrating the EgoNet algorithm and pathway analysis

Brazilian journal of medical and biological research, 2017-01, Vol.50 (2), p.e5793-e5793

2017

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Electrical resistivity in Zr48Nb8Cu12Fe8Be24 glassy and crystallized alloys

Journal of applied physics, 2004-02, Vol.95 (3), p.1269-1273

2004

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Rate Equations for 1.3- \mu m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs-GaAs Quantum-Dot Lasers

IEEE journal of quantum electronics, 2006-11, Vol.42 (11), p.1175-1183

2006

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Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-μm InAs-GaAs Quantum-Dot VCSELs

IEEE journal of quantum electronics, 2008-09, Vol.44 (9-10), p.879-885

2008

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1.3- \mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process

IEEE photonics technology letters, 2011, Vol.23 (2), p.91-93

2011

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Rate equation model of the negative characteristic temperature of InAs∕GaAs quantum dot lasers

Journal of applied physics, 2007-05, Vol.101 (10)

2007

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Comparative analysis of cavity length-dependent temperature sensitivity of GaInNAs quantum dot lasers and quantum well lasers

Nanotechnology, 2006-11, Vol.17 (22), p.5627-5631

2006

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Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-[Formula Omitted] InAs-GaAs Quantum-Dot VCSELs

IEEE journal of quantum electronics, 2008-09, Vol.44 (9), p.879-885

2008

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Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers

Journal of physics. D, Applied physics, 2009-04, Vol.42 (8)

2009

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An investigation of growth temperature on the surface morphology and optical properties of 1.3 µm InAs/InGaAs/GaAs quantum dot structures

Nanotechnology, 2007-09, Vol.18 (36), p.365708

2007

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1.55 μ m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

Applied physics letters, 2005-09, Vol.87 (11), p.111105-111105-3

2005

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Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers

Applied physics letters, 2009-11, Vol.95 (19)

2009

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Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers

Applied physics letters, 2007-01, Vol.90 (4)

2007

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Theoretical investigation of 1.3 μ m dots-under-a-well and dots-in-a-well InAs/GaAs quantum dot vertical-cavity surface-emitting lasers

Journal of applied physics, 2009-08, Vol.106 (3), p.033106-033106-8

2009

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Effects of rapid thermal annealing on optical properties of p -doped and undoped InAs/InGaAs dots-in-a-well structures

Journal of applied physics, 2008-08, Vol.104 (3), p.033522-033522-6

2008

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Low energy Ar + sputtering-induced GaAs quantum dot formation and evolution

Journal of applied physics, 2009-07, Vol.106 (2), p.024301-024301-5

2009

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High power single-sided Bragg reflection waveguide lasers with dual-lobed far field

Applied physics. B, Lasers and optics, 2012-06, Vol.107 (3), p.809-812

2012

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Temperature Characteristics of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.743-748

2009

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High-Temperature Continuous-Wave Single-Mode Operation of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot VCSELs

IEEE photonics technology letters, 2009-09, Vol.21 (17), p.1211-1213

2009

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Effects of ternary elements on the ductility of TiAl

Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers

ERCC polymorphisms and risk of osteosarcoma: a meta-analysis

Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy

Investigating ego modules and pathways in osteosarcoma by integrating the EgoNet algorithm and pathway analysis

Electrical resistivity in Zr48Nb8Cu12Fe8Be24 glassy and crystallized alloys

Rate Equations for 1.3- \mu m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs-GaAs Quantum-Dot Lasers

Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-μm InAs-GaAs Quantum-Dot VCSELs

1.3- \mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process

Rate equation model of the negative characteristic temperature of InAs∕GaAs quantum dot lasers

Comparative analysis of cavity length-dependent temperature sensitivity of GaInNAs quantum dot lasers and quantum well lasers

Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-[Formula Omitted] InAs-GaAs Quantum-Dot VCSELs

Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers

An investigation of growth temperature on the surface morphology and optical properties of 1.3 µm InAs/InGaAs/GaAs quantum dot structures

1.55 μ m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers

Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers

Theoretical investigation of 1.3 μ m dots-under-a-well and dots-in-a-well InAs/GaAs quantum dot vertical-cavity surface-emitting lasers

Effects of rapid thermal annealing on optical properties of p -doped and undoped InAs/InGaAs dots-in-a-well structures

Low energy Ar + sputtering-induced GaAs quantum dot formation and evolution

High power single-sided Bragg reflection waveguide lasers with dual-lobed far field

Temperature Characteristics of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

High-Temperature Continuous-Wave Single-Mode Operation of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot VCSELs

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