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Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4194-4199

2022

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The relationship between skin ultrasound images and muscle damage using skin blotting in wheelchair basketball athletes

Spinal cord, 2020-09, Vol.58 (9), p.1022-1029

2020

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High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications

Thin solid films, 2019-01, Vol.669, p.306-314

2019

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500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC

Japanese Journal of Applied Physics, 2022-03, Vol.61 (3), p.36501

2022

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Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC

Materials science forum, 2019-07, Vol.963, p.451-455

2019

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Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC

Japanese Journal of Applied Physics, 2019-11, Vol.58 (11), p.116501

2019

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Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC

Materials science in semiconductor processing, 2021-01, Vol.121, p.105343, Article 105343

2021

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CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC

Japanese Journal of Applied Physics, 2020-04, Vol.59 (5)

2020

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Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC

Materials science forum, 2019-07, Vol.963, p.498-501

2019

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Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors

Materials science forum, 2018-06, Vol.924, p.465-468

2018

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Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs

Materials science forum, 2019-07, Vol.963, p.613-616

2019

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Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics

Materials Science Forum, 2018-06, Vol.924, p.971-974

2018

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4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters

Materials science forum, 2019-07, Vol.963, p.837-840

2019

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4H-SiC pseudo-CMOS logic inverters for harsh environment electronics

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 669

2017

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Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation

Materials Science Forum, 2016-05, Vol.858, p.864-867

2016

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Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits

Japanese Journal of Applied Physics, 2024-08, Vol.63 (8), p.86503

2024

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Quantitative evaluation for intravascular structures of vertebral artery dissection with a novel zoomed high-resolution black-blood MR imaging

The neuroradiology journal, 2023-10, Vol.36 (5), p.563-571

2023

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Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

Japanese Journal of Applied Physics, 2024-01, Vol.63 (1), p.15503

2024

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Which objective itch‐assessment tools are applicable to patients with advanced cognitive impairments? A scoping review

International journal of older people nursing, 2022-09, Vol.17 (5), p.e12458-n/a

2022

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High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications

Japanese Journal of Applied Physics, 2020-12, Vol.59 (12), p.126504

2020

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CF 4 :O 2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC

Japanese Journal of Applied Physics, 2020-05, Vol.59 (5), p.56501

2020

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Decreasing Coke Rate under All-Pellet Operation in Kobe No.3 Blast Furnace

Kobelco technology review, 2020-03 (38), p.46

2020

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Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium

Materials science forum, 2018-06, Vol.924, p.477-481

2018

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Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

Japanese Journal of Applied Physics, 2019-08, Vol.58 (8), p.81007

2019

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Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using Alkaline earth metal

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

Volltextzugriff (PDF)

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Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications

The relationship between skin ultrasound images and muscle damage using skin blotting in wheelchair basketball athletes

High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications

500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC

Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC

Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC

Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC

CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC

Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC

Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors

Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs

Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics

4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters

4H-SiC pseudo-CMOS logic inverters for harsh environment electronics

Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation

Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits

Quantitative evaluation for intravascular structures of vertebral artery dissection with a novel zoomed high-resolution black-blood MR imaging

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

Which objective itch‐assessment tools are applicable to patients with advanced cognitive impairments? A scoping review

High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications

CF 4 :O 2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC

Decreasing Coke Rate under All-Pellet Operation in Kobe No.3 Blast Furnace

Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium

Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using Alkaline earth metal

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