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Unusual Manganese Luminescence Channels in Low Doped MgAl2O4

Journal of luminescence, 2025-01, Vol.277, p.120970, Article 120970

2025

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Decompression alone or with fusion for degenerative lumbar spondylolisthesis (Nordsten-DS): five year follow-up of a randomised, multicentre, non-inferiority trial

BMJ (Online), 2024-08, Vol.386, p.e079771

2024

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Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer

Physical review materials, 2023-10, Vol.7 (10), Article 103801

2023

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Excitation Transfer from Cr2+ to Fe2+ Ions in Co-doped ZnSe as a Pumping Scheme for Infrared Solid-State Lasers

Journal of electronic materials, 2023-08, Vol.52 (8), p.5166-5171

2023

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Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells

Physica status solidi. PSS-RRL. Rapid research letters, 2023-07, Vol.17 (7), p.n/a

2023

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Efficient Electronic Excitation Transfer via Phonon-Assisted Dipole-Dipole Coupling in Fe 2 + :Cr 2 + :ZnSe

Physical review applied, 2023-05, Vol.19 (5), Article 054043

2023

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Spatially resolved degradation effects in UVB LEDs stressed by constant current operation

Applied physics letters, 2023-03, Vol.122 (13)

2023

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Kinetics of excitation transfer from Cr 2+ to Fe 2+ ions in co-doped ZnSe

Optics letters, 2022-05, Vol.47 (9), p.2129

2022

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Kinetics of excitation transfer from Cr2+ to Fe2+ ions in co-doped ZnSe

Optics letters, 2022-05, Vol.47 (9), p.2129-2132

2022

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Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers

Physica status solidi. PSS-RRL. Rapid research letters, 2022-04, Vol.16 (4), p.n/a

2022

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Decompression with or without Fusion in Degenerative Lumbar Spondylolisthesis

The New England journal of medicine, 2021-08, Vol.385 (6), p.526-538

2021

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Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Photonics research (Washington, DC), 2021-05, Vol.9 (5), p.714

2021

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In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation

Applied physics letters, 2020-09, Vol.117 (12)

2020

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Temperature‐Dependent Charge Carrier Diffusion in [ 0001¯ ] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

physica status solidi (b), 2020-06, Vol.257 (6), p.n/a

2020

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Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

AIP advances, 2020-05, Vol.10 (5), p.055311-055311-6

2020

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Origin of Band-Tail and Deep-Donor States in Cu2ZnSnS4 Solar Cells and Their Suppression through Sn-Poor Composition

The journal of physical chemistry letters, 2019-12, Vol.10 (24), p.7929-7936

2019

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Origin of Band-Tail and Deep-Donor States in Cu 2 ZnSnS 4 Solar Cells and Their Suppression through Sn-Poor Composition

The journal of physical chemistry letters, 2019-12, Vol.10 (24), p.7929-7936

2019

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By-Emitter Analysis of 450-nm Emitting High-Power Diode Laser Bars

IEEE journal of selected topics in quantum electronics, 2019-11, Vol.25 (6), p.1-6

2019

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Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers

OSA continuum, 2019-05, Vol.2 (5), p.1496

2019

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Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

Journal of applied physics, 2019-05, Vol.125 (18)

2019

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Dynamics of Broadband Lasing Cascade from a Single Dot-in-well InGaAs Microdisk

Scientific reports, 2019-04, Vol.9 (1), p.5635, Article 5635

2019

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Catastrophic Optical Damage of GaN-Based Diode Lasers: Sequence of Events, Damage Pattern, and Comparison with GaAs-Based Devices

Journal of electronic materials, 2018-09, Vol.47 (9), p.4959-4963

2018

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Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice

Physical review. B, 2018-04, Vol.97 (16)

2018

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Ultrafast carrier dynamics in a GaN / Al 0.18 Ga 0.82 N superlattice

Physical review. B, 2018-04, Vol.97 (16), Article 161303

2018

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Emission Kinetics from PbSe Quantum Dots in Glass Matrix at High Excitation Levels (Phys. Status Solidi RRL 4/2018)

Physica status solidi. PSS-RRL. Rapid research letters, 2018-04, Vol.12 (4), p.n/a

2018

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Unusual Manganese Luminescence Channels in Low Doped MgAl2O4

Decompression alone or with fusion for degenerative lumbar spondylolisthesis (Nordsten-DS): five year follow-up of a randomised, multicentre, non-inferiority trial

Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer

Excitation Transfer from Cr2+ to Fe2+ Ions in Co-doped ZnSe as a Pumping Scheme for Infrared Solid-State Lasers

Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells

Efficient Electronic Excitation Transfer via Phonon-Assisted Dipole-Dipole Coupling in Fe 2 + :Cr 2 + :ZnSe

Spatially resolved degradation effects in UVB LEDs stressed by constant current operation

Kinetics of excitation transfer from Cr 2+ to Fe 2+ ions in co-doped ZnSe

Kinetics of excitation transfer from Cr2+ to Fe2+ ions in co-doped ZnSe

Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers

Decompression with or without Fusion in Degenerative Lumbar Spondylolisthesis

Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation

Temperature‐Dependent Charge Carrier Diffusion in [ 0001¯ ] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

Origin of Band-Tail and Deep-Donor States in Cu2ZnSnS4 Solar Cells and Their Suppression through Sn-Poor Composition

Origin of Band-Tail and Deep-Donor States in Cu 2 ZnSnS 4 Solar Cells and Their Suppression through Sn-Poor Composition

By-Emitter Analysis of 450-nm Emitting High-Power Diode Laser Bars

Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers

Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

Dynamics of Broadband Lasing Cascade from a Single Dot-in-well InGaAs Microdisk

Catastrophic Optical Damage of GaN-Based Diode Lasers: Sequence of Events, Damage Pattern, and Comparison with GaAs-Based Devices

Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice

Ultrafast carrier dynamics in a GaN / Al 0.18 Ga 0.82 N superlattice

Emission Kinetics from PbSe Quantum Dots in Glass Matrix at High Excitation Levels (Phys. Status Solidi RRL 4/2018)

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