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Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p -AlGaAs/GaAsP/ n -AlGaAs laser diode structures: Numerical calculations and experimental results

Journal of applied physics, 2012-11, Vol.112 (9)

2012

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Evidence for "dark charge" from photoluminescence measurements in wide InGaN quantum wells

Optics express, 2023-01, Vol.31 (2), p.3227-3236

2023

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Temperature dependent carrier escape from quantum well states in GaAs/GaAlAs graded index laser structures

Semiconductor science and technology, 1999-03, Vol.14 (3), p.293-297

1999

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Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond

Nanotechnology, 2020-05, Vol.31 (29), p.294003-294003

2020

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Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures

Applied physics letters, 2005-02, Vol.86 (6), p.063102-063102-3

2005

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Role of hole confinement in the recombination properties of InGaN quantum structures

Scientific reports, 2019-06, Vol.9 (1), p.9047-10, Article 9047

2019

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Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy

Physica status solidi. A, Applications and materials science, 2007-02, Vol.204 (2), p.422-429

2007

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Emission Kinetics of Surface (Bi)Excitons in ZnO Thin Films

Physics of the solid state, 2019-03, Vol.61 (3), p.402-407

2019

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GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission

Applied physics letters, 2016-03, Vol.108 (10)

2016

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Spatially resolved spectroscopic strain measurements on high-power laser diode bars

Journal of applied physics, 2003-02, Vol.93 (3), p.1354-1362

2003

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Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots

Physical review. B, Condensed matter and materials physics, 2005-06, Vol.71 (23), p.235313.1-235313.8

2005

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Carrier transfer in self-assembled coupled InAs/GaAs quantum dots

Journal of applied physics, 2000-12, Vol.88 (12), p.7162-7170

2000

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Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots

Applied physics letters, 2001-05, Vol.78 (21), p.3214-3216

2001

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Photoelectric dichroism of oriented thin film CdS fabricated by pulsed-laser deposition

Solid state communications, 2000-01, Vol.116 (1), p.33-35

2000

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Facet degradation of high-power diode laser arrays

Applied physics. A, Materials science & processing, 2000-04, Vol.70 (4), p.377-381

2000

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Emulation of the operation and degradation of high-power laser bars using simulation tools

Semiconductor science and technology, 2012-09, Vol.27 (9), p.94012

2012

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Optical and photoelectrical properties of oriented ZnO films

Journal of applied physics, 2000-02, Vol.87 (4), p.1844-1848

2000

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Transient carrier transfer in tunnel injection structures

Applied physics letters, 2008-07, Vol.93 (3), p.031105-031105-3

2008

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Photoluminescence properties of ZnGa2O4:Mn powder phosphors

Journal of applied physics, 1995-11, Vol.78 (9), p.5691-5695

1995

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Simultaneous quantitative determination of strain and defect profiles within the active region along high-power diode laser bars by micro-photocurrent mapping

European physical journal. Applied physics, 2004-07, Vol.27 (1-3), p.451-454

2004

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Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100–1550 nm range

Journal of applied physics, 2000-09, Vol.88 (5), p.3004-3014

2000

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Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices

Applied physics letters, 1998-12, Vol.73 (26), p.3908-3910

1998

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Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

Journal of electronic materials, 2000-02, Vol.29 (2), p.205-209

2000

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Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers

Journal of applied physics, 2018-03, Vol.123 (12)

2018

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Aging properties of high power laser diode arrays analyzed by Fourier-transform photocurrent measurements

Applied physics letters, 1997-10, Vol.71 (16), p.2233-2235

1997

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Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p -AlGaAs/GaAsP/ n -AlGaAs laser diode structures: Numerical calculations and experimental results

Evidence for "dark charge" from photoluminescence measurements in wide InGaN quantum wells

Temperature dependent carrier escape from quantum well states in GaAs/GaAlAs graded index laser structures

Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond

Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures

Role of hole confinement in the recombination properties of InGaN quantum structures

Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy

Emission Kinetics of Surface (Bi)Excitons in ZnO Thin Films

GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission

Spatially resolved spectroscopic strain measurements on high-power laser diode bars

Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots

Carrier transfer in self-assembled coupled InAs/GaAs quantum dots

Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots

Photoelectric dichroism of oriented thin film CdS fabricated by pulsed-laser deposition

Facet degradation of high-power diode laser arrays

Emulation of the operation and degradation of high-power laser bars using simulation tools

Optical and photoelectrical properties of oriented ZnO films

Transient carrier transfer in tunnel injection structures

Photoluminescence properties of ZnGa2O4:Mn powder phosphors

Simultaneous quantitative determination of strain and defect profiles within the active region along high-power diode laser bars by micro-photocurrent mapping

Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100–1550 nm range

Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices

Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers

Aging properties of high power laser diode arrays analyzed by Fourier-transform photocurrent measurements

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