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Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2021-02, Vol.129 (8)

2021

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The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

Journal of applied physics, 2018-12, Vol.124 (21)

2018

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Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

Journal of applied physics, 2021-03, Vol.129 (11)

2021

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Wide range doping control and defect characterization of GaN layers with various Mg concentrations

Journal of applied physics, 2018-10, Vol.124 (16)

2018

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Progress on and challenges of p-type formation for GaN power devices

Journal of applied physics, 2020-09, Vol.128 (9)

2020

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Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method

Applied physics letters, 2024-03, Vol.124 (10)

2024

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Identification of type of threading dislocation causing reverse leakage in GaN p-n junctions after continuous forward current stress

Scientific reports, 2022-01, Vol.12 (1), p.1458-1458, Article 1458

2022

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Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor

Applied physics letters, 2024-07, Vol.125 (2)

2024

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Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions

Applied physics letters, 2023-03, Vol.122 (11)

2023

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Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

Applied physics letters, 2021-06, Vol.118 (25)

2021

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Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCB36

2019

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Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices

Japanese Journal of Applied Physics, 2020-01, Vol.59 (SA), p.SA0804

2020

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Real world long-term outcomes in patients with mucopolysaccharidosis type II: A retrospective cohort study

Molecular genetics and metabolism reports, 2021-12, Vol.29, p.100816-100816, Article 100816

2021

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Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGD05

2020

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Divergent developmental trajectories in two siblings with neuropathic mucopolysaccharidosis type II (Hunter syndrome) receiving conventional and novel enzyme replacement therapies: A case report

JIMD reports, 2021-11, Vol.62 (1), p.9-14

2021

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Chemoenzymatic Synthesis of Glycosylated Glucagon-like Peptide 1: Effect of Glycosylation on Proteolytic Resistance and in Vivo Blood Glucose-Lowering Activity

Journal of the American Chemical Society, 2009-05, Vol.131 (17), p.6237-6245

2009

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Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer

Journal of applied physics, 2008-07, Vol.104 (1), p.014906-014906-5

2008

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Strain-induced step bunching in orientation-controlled GaN on Si

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE

Journal of crystal growth, 2009-05, Vol.311 (10), p.2883-2886

2009

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Exogenous Histamine Stimulates Colorectal Cancer Implant Growth via Immunosuppression in Mice

Journal of Pharmacological Sciences, 2005, Vol.97(1), pp.116-123

2005

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Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence

physica status solidi (b), 2024-01

2024

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Roxatidine- and Cimetidine-Induced Angiogenesis Inhibition Suppresses Growth of Colon Cancer Implants in Syngeneic Mice

Journal of Pharmacological Sciences, 2003, Vol.93(3), pp.321-330

2003

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Why do electron traps at E C –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?

Japanese Journal of Applied Physics, 2020-10, Vol.59 (10), p.105505

2020

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A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m ‐plane Trench Sidewall

Physica status solidi. PSS-RRL. Rapid research letters, 2024-04

2024

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Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

Wide range doping control and defect characterization of GaN layers with various Mg concentrations

Progress on and challenges of p-type formation for GaN power devices

Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method

Identification of type of threading dislocation causing reverse leakage in GaN p-n junctions after continuous forward current stress

Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor

Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions

Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy

Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices

Real world long-term outcomes in patients with mucopolysaccharidosis type II: A retrospective cohort study

Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN

Divergent developmental trajectories in two siblings with neuropathic mucopolysaccharidosis type II (Hunter syndrome) receiving conventional and novel enzyme replacement therapies: A case report

Chemoenzymatic Synthesis of Glycosylated Glucagon-like Peptide 1: Effect of Glycosylation on Proteolytic Resistance and in Vivo Blood Glucose-Lowering Activity

Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer

Strain-induced step bunching in orientation-controlled GaN on Si

Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE

Exogenous Histamine Stimulates Colorectal Cancer Implant Growth via Immunosuppression in Mice

Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence

Roxatidine- and Cimetidine-Induced Angiogenesis Inhibition Suppresses Growth of Colon Cancer Implants in Syngeneic Mice

Why do electron traps at E C –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?

A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m ‐plane Trench Sidewall

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