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Atomistic approach to variability of bias-temperature instability in circuit simulations

2011 International Reliability Physics Symposium, 2011, p.XT.3.1-XT.3.5

2011

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On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1388-1391

2011

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Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

Journal of physics. D, Applied physics, 2007-09, Vol.40 (17), p.5256-5265

2007

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Response of a single trap to AC negative Bias Temperature stress

2011 International Reliability Physics Symposium, 2011, p.4A.2.1-4A.2.8

2011

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High quality Ti-implanted Si layers above the Mott limit

Journal of applied physics, 2010-05, Vol.107 (10), p.103524-103524-5

2010

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Titanium doped silicon layers with very high concentration

Journal of applied physics, 2008-07, Vol.104 (1), p.016105-016105-3

2008

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Gate current random telegraph noise and single defect conduction

Microelectronic engineering, 2013-09, Vol.109, p.123-125

2013

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Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

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Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling

Microelectronic engineering, 2015-11, Vol.147, p.45-50

2015

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Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics

Microelectronic engineering, 2011-07, Vol.88 (7), p.1243-1246

2011

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Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components

Microelectronic engineering, 2013-09, Vol.109, p.314-317

2013

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Defect-centric perspective of time-dependent BTI variability

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1883-1890

2012

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Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization

Microelectronic engineering, 2013-09, Vol.109, p.39-42

2013

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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

Journal of applied physics, 2010-06, Vol.107 (11), p.114104-114104-5

2010

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Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.5A.4.1-5A.4.6

2012

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As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1675-1679

2014

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Defect-based methodology for workload-dependent circuit lifetime projections - Application to SRAM

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.3A.4.1-3A.4.7

2013

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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

Semiconductor science and technology, 2005-10, Vol.20 (10), p.1044-1051

2005

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Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2258-2261

2014

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Superior reliability of high mobility (Si)Ge channel pMOSFETs

Microelectronic engineering, 2013-09, Vol.109, p.250-256

2013

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Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.2D.2.1-2D.2.7

2013

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Probabilistic defect occupancy model for NBTI

2011 International Reliability Physics Symposium, 2011, p.XT.4.1-XT.4.6

2011

Volltextzugriff (PDF)

Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

Microelectronic engineering, 2011-07, Vol.88 (7), p.1357-1360

2011

Volltextzugriff (PDF)

New Developments in Charge Pumping Measurements on Thin Stacked Dielectrics

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3184-3191

2008

Volltextzugriff (PDF)

Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

Microelectronic engineering, 2011-09, Vol.88 (9), p.2991-2996

2011

Volltextzugriff (PDF)

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Atomistic approach to variability of bias-temperature instability in circuit simulations

On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

Response of a single trap to AC negative Bias Temperature stress

High quality Ti-implanted Si layers above the Mott limit

Titanium doped silicon layers with very high concentration

Gate current random telegraph noise and single defect conduction

Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling

Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics

Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components

Defect-centric perspective of time-dependent BTI variability

Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization

Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability

Defect-based methodology for workload-dependent circuit lifetime projections - Application to SRAM

A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations

Superior reliability of high mobility (Si)Ge channel pMOSFETs

Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy

Probabilistic defect occupancy model for NBTI

Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

New Developments in Charge Pumping Measurements on Thin Stacked Dielectrics

Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

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