UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

High-quality and high-purity homoepitaxial diamond (100) film growth under high oxygen concentration condition

Journal of applied physics, 2015-09, Vol.118 (11)

Teraji, Tokuyuki

2015

Volltextzugriff (PDF)

Nitrogen-related point defects in homoepitaxial diamond (001) freestanding single crystals

Journal of applied physics, 2023-04, Vol.133 (16)

2023

Volltextzugriff (PDF)

Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond

Science (American Association for the Advancement of Science), 2019-02, Vol.363 (6428), p.728-731

2019

Volltextzugriff (PDF)

Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3963-3967

2021

Volltextzugriff (PDF)

Chemical vapor deposition of diamond crystals for quantum device applications

Journal of the Japanese Association for Crystal Growth, 2021, Vol.48(3), pp.48-3-06

Teraji, Tokuyuki

2021

Volltextzugriff (PDF)

Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1764-1768

2024

Volltextzugriff (PDF)

Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

Applied physics letters, 2014-03, Vol.104 (10)

2014

Volltextzugriff (PDF)

Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2199

2023

Volltextzugriff (PDF)

Propagation of dislocations in diamond (111) homoepitaxial layer

Journal of applied physics, 2022-07, Vol.132 (2)

2022

Volltextzugriff (PDF)

Engineering preferentially-aligned nitrogen-vacancy centre ensembles in CVD grown diamond

Scientific reports, 2019-04, Vol.9 (1), p.5786-5786, Article 5786

2019

Volltextzugriff (PDF)

Charge stability of shallow single nitrogen-vacancy centers in lightly boron-doped diamond

Carbon (New York), 2022-06, Vol.192, p.473-481

2022

Volltextzugriff (PDF)

Nitrogen related paramagnetic defects: Decoherence source of ensemble of NV− center

Journal of applied physics, 2022-12, Vol.132 (21)

2022

Volltextzugriff (PDF)

Chemical vapor deposition of homoepitaxial diamond films

Physica status solidi. A, Applications and materials science, 2006-10, Vol.203 (13), p.3324-3357

Teraji, Tokuyuki

2006

Volltextzugriff (PDF)

Equilibrium charge state of NV centers in diamond

Applied physics letters, 2021-12, Vol.119 (25)

2021

Volltextzugriff (PDF)

High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

IEEE electron device letters, 2019-11, Vol.40 (11), p.1748-1751

2019

Volltextzugriff (PDF)

All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond

Physical review letters, 2014-12, Vol.113 (26), p.263602, Article 263602

2014

Volltextzugriff (PDF)

Columnar excitation fluorescence microscope for accurate evaluation of quantum properties of color centers in bulk materials

Scientific reports, 2024-08, Vol.14 (1), p.18135-11, Article 18135

2024

Volltextzugriff (PDF)

Appearance of spectral dip in the cathodoluminescence spectrum of negatively charged nitrogen-vacancy centers in diamonds

Diamond and related materials, 2024-10, Vol.148, p.111476, Article 111476

2024

Volltextzugriff (PDF)

Photoluminescence excitation spectroscopy of SiV− and GeV− color center in diamond

New journal of physics, 2017-07, Vol.19 (6), p.63036

2017

Volltextzugriff (PDF)

Optical-power-dependent Splitting of Magnetic Resonance in Nitrogen-vacancy Centers in Diamond

Journal of the Physical Society of Japan, 2023-08, Vol.92 (8)

2023

Volltextzugriff (PDF)

Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-1

2020

Volltextzugriff (PDF)

Polarization- and frequency-tunable microwave circuit for selective excitation of nitrogen-vacancy spins in diamond

Applied physics letters, 2016-10, Vol.109 (18)

2016

Volltextzugriff (PDF)

Protecting a Diamond Quantum Memory by Charge State Control

Nano letters, 2017-10, Vol.17 (10), p.5931-5937

2017

Volltextzugriff (PDF)

Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond

Applied physics letters, 2017-05, Vol.110 (21)

2017

Volltextzugriff (PDF)

Triple nitrogen-vacancy centre fabrication by C5N4H n ion implantation

Nature communications, 2019-06, Vol.10 (1), p.1-9

2019

Volltextzugriff (PDF)

1 – 25 von 177

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(142)
Mit Volltextzugriff
(158)

Publikationsform

Sprache

Englisch
(168)
Japanisch
(19)

Erscheinungsjahr

n.n

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

High-quality and high-purity homoepitaxial diamond (100) film growth under high oxygen concentration condition

Nitrogen-related point defects in homoepitaxial diamond (001) freestanding single crystals

Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond

Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance

Chemical vapor deposition of diamond crystals for quantum device applications

Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition

Propagation of dislocations in diamond (111) homoepitaxial layer

Engineering preferentially-aligned nitrogen-vacancy centre ensembles in CVD grown diamond

Charge stability of shallow single nitrogen-vacancy centers in lightly boron-doped diamond

Nitrogen related paramagnetic defects: Decoherence source of ensemble of NV− center

Chemical vapor deposition of homoepitaxial diamond films

Equilibrium charge state of NV centers in diamond

High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond

Columnar excitation fluorescence microscope for accurate evaluation of quantum properties of color centers in bulk materials

Appearance of spectral dip in the cathodoluminescence spectrum of negatively charged nitrogen-vacancy centers in diamonds

Photoluminescence excitation spectroscopy of SiV− and GeV− color center in diamond

Optical-power-dependent Splitting of Magnetic Resonance in Nitrogen-vacancy Centers in Diamond

Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

Polarization- and frequency-tunable microwave circuit for selective excitation of nitrogen-vacancy spins in diamond

Protecting a Diamond Quantum Memory by Charge State Control

Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond

Triple nitrogen-vacancy centre fabrication by C5N4H n ion implantation

Suchergebnisse filtern