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Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.405-413

2015

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IEEE_Xplore

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Japanese Journal of Applied Physics, 2016-07, Vol.55 (7), p.70101

2016

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Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs

Japanese Journal of Applied Physics, 2020-08, Vol.59 (8), p.84002

2020

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Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2423-2428

2015

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IEEE_Xplore

Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures

Applied physics letters, 2012-12, Vol.101 (26)

2012

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Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes

Japanese Journal of Applied Physics, 2019-10, Vol.58 (10), p.106503

2019

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A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures

Applied physics letters, 2012-08, Vol.101 (8), p.82111

2012

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A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation

Journal of applied physics, 2013-07, Vol.114 (4)

2013

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Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10), p.104101

2017

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Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures

Applied physics letters, 2011-09, Vol.99 (13), p.132102-132102-3

2011

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Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier

IEEE electron device letters, 2020-05, Vol.41 (5), p.693

2020

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Enhancement-Mode AlGaN/GaN MIS-HEMTs With High V TH and High I Dmax Using Recessed-Structure With Regrown AlGaN Barrier

IEEE electron device letters, 2020-05, Vol.41 (5), p.693-696

2020

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High carrier concentration in high Al-composition AlGaN-channnel HEMTs

Physica status solidi. C, 2012-02, Vol.9 (2), p.373-376

2012

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Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

IEEE electron device letters, 2013-11, Vol.34 (11), p.1379-1381

2013

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IEEE_Xplore

Enhancement-mode AlGaN/GaN MIS-HEMTs with high VTH and high IDmax using recessedstructure with regrown AlGaN barrier

IEEE electron device letters, 2020-04, p.1-1

2020

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IEEE_Xplore

Enhancement‐Mode AlGaN/GaN Vertical Trench Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Influence of reactive-ion-etching depth on interface properties in Al 2 O 3 /n-GaN MOS diodes

Japanese Journal of Applied Physics, 2019-10, Vol.58 (10), p.106503

2019

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On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods

Applied surface science, 2019-07, Vol.481, p.1120-1126

2019

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AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5 × 10 10 achieved by ozone pretreatment and using ozone oxidant for Al 2 O 3 gate insulator

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12), p.120305

2016

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AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with high on/off current ratio of over 5 × 1010 achieved by ozone pretreatment and using ozone oxidant for Al2O3 gate insulator

Japanese Journal of Applied Physics, 2016-11, Vol.55 (12)

2016

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Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.71001

2018

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Comparison of 2DEG density and mobility increase by annealing AlGaN/GaN heterostructures deposited with Ti/Al, Ti/Au, V/Au, and Ni/Au

Physica status solidi. C, 2013-11, Vol.10 (11), p.1405-1408

2013

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Improved insulator/semiconductor interfaces in Al2O3/AlGaN/GaN structures by AlGaN layer regrowth

2019 Compound Semiconductor Week (CSW), 2019, p.1-1

2019

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VII. Millimeter-Wave HEMT

IEEJ Transactions on Electronics, Information and Systems, 1996/04/20, Vol.116(5), pp.512-514

Tokuda, Hirokuni

1996

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Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs

Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures

Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes

A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures

A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation

Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures

Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier

Enhancement-Mode AlGaN/GaN MIS-HEMTs With High V TH and High I Dmax Using Recessed-Structure With Regrown AlGaN Barrier

High carrier concentration in high Al-composition AlGaN-channnel HEMTs

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Enhancement-mode AlGaN/GaN MIS-HEMTs with high VTH and high IDmax using recessedstructure with regrown AlGaN barrier

Enhancement‐Mode AlGaN/GaN Vertical Trench Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique

Influence of reactive-ion-etching depth on interface properties in Al 2 O 3 /n-GaN MOS diodes

On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods

AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5 × 10 10 achieved by ozone pretreatment and using ozone oxidant for Al 2 O 3 gate insulator

AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with high on/off current ratio of over 5 × 1010 achieved by ozone pretreatment and using ozone oxidant for Al2O3 gate insulator

Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe

Comparison of 2DEG density and mobility increase by annealing AlGaN/GaN heterostructures deposited with Ti/Al, Ti/Au, V/Au, and Ni/Au

Improved insulator/semiconductor interfaces in Al2O3/AlGaN/GaN structures by AlGaN layer regrowth

VII. Millimeter-Wave HEMT

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