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Layer exchange synthesis of multilayer graphene

Nanotechnology, 2021-11, Vol.32 (47), p.472005

2021

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Metal-induced layer exchange of group IV materials

Journal of physics. D, Applied physics, 2020-09, Vol.53 (37), p.373002

2020

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Strain effects on polycrystalline germanium thin films

Scientific reports, 2021-04, Vol.11 (1), p.8333-8333, Article 8333

2021

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Semantic segmentation in crystal growth process using fake micrograph machine learning

Scientific reports, 2024-08, Vol.14 (1), p.19449-8

2024

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High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer

Scientific reports, 2019-03, Vol.9 (1), p.4068-4068, Article 4068

2019

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Metal-induced lateral crystallization of germanium thin films

Materials & design, 2023-08, Vol.232, p.112116, Article 112116

2023

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Effects of Ba-to-Si deposition rate ratios on the electrical and photoresponse properties of arsenic-doped n-type BaSi2 films

Thin solid films, 2021-11, Vol.738, p.138969, Article 138969

2021

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Acceptor defects in polycrystalline Ge layers evaluated using linear regression analysis

Scientific reports, 2022-09, Vol.12 (1), p.14941-14941, Article 14941

2022

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Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Impact of the Density and Oxygen Concentration of Initial Amorphous Carbon on Layer Exchange of Multilayer Graphene

Crystal growth & design, 2022-12, Vol.22 (12), p.7564-7568

2022

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Effect of amorphous Si capping layer on the hole transport properties of BaSi2 and improved conversion efficiency approaching 10% in p-BaSi2/n-Si solar cells

Applied physics letters, 2016-08, Vol.109 (7)

2016

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Strain-dependent grain boundary properties of n-type germanium layers

Scientific reports, 2024-04, Vol.14 (1), p.7812-7812, Article 7812

2024

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Improving carrier mobility of polycrystalline Ge by Sn doping

Scientific reports, 2018-10, Vol.8 (1), p.14832-7, Article 14832

2018

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Influence of grain size and surface condition on minority-carrier lifetime in undoped n -BaSi2 on Si(111)

Journal of applied physics, 2014-05, Vol.115 (19)

2014

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Flexible Thermoelectric Generator Based on Polycrystalline SiGe Thin Films

Materials, 2022-01, Vol.15 (2), p.608

2022

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Formation of high-photoresponsivity BaSi2 films on glass substrate by radio-frequency sputtering for solar cell applications

Journal of physics. D, Applied physics, 2021-04, Vol.54 (13)

2021

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Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films

Journal of applied physics, 2018-01, Vol.123 (4)

2018

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Co-sputtering deposition of high-photoresponsivity and high-mobility polycrystalline BaSi2 films on Si substrates

Thin solid films, 2022-09, Vol.758, p.139426, Article 139426

2022

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Bayesian optimization-driven enhancement of the thermoelectric properties of polycrystalline III-V semiconductor thin films

NPG Asia materials, 2024-03, Vol.16 (1), p.17-7, Article 17

2024

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Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors

IEEE electron device letters, 2021-12, Vol.42 (12), p.1735-1738

2021

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Zn1-xGexOy Passivating Interlayers for BaSi2 Thin-Film Solar Cells

ACS applied materials & interfaces, 2022-03, Vol.14 (11), p.13828-13835

2022

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High-temperature post-annealing effect on the surface morphology and photoresponse and electrical properties of B-doped BaSi2 films grown by molecular beam epitaxy under various Ba-to-Si deposition rate ratios

Journal of crystal growth, 2022-01, Vol.578, p.126429, Article 126429

2022

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Metal Catalysts for Layer-Exchange Growth of Multilayer Graphene

ACS applied materials & interfaces, 2018-12, Vol.10 (48), p.41664-41669

2018

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Three-Dimensionally Orientation-Controlled Ge Rods on an Insulator Formed by Low-Temperature Ni-Induced Lateral Crystallization

Crystal growth & design, 2022-02, Vol.22 (2), p.1123-1129

2022

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High Thermoelectric Performance in Polycrystalline GeSiSn Ternary Alloy Thin Films

ACS applied materials & interfaces, 2022-12, Vol.14 (49), p.54848-54854

2022

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Layer exchange synthesis of multilayer graphene

Metal-induced layer exchange of group IV materials

Strain effects on polycrystalline germanium thin films

Semantic segmentation in crystal growth process using fake micrograph machine learning

High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer

Metal-induced lateral crystallization of germanium thin films

Effects of Ba-to-Si deposition rate ratios on the electrical and photoresponse properties of arsenic-doped n-type BaSi2 films

Acceptor defects in polycrystalline Ge layers evaluated using linear regression analysis

Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates

Impact of the Density and Oxygen Concentration of Initial Amorphous Carbon on Layer Exchange of Multilayer Graphene

Effect of amorphous Si capping layer on the hole transport properties of BaSi2 and improved conversion efficiency approaching 10% in p-BaSi2/n-Si solar cells

Strain-dependent grain boundary properties of n-type germanium layers

Improving carrier mobility of polycrystalline Ge by Sn doping

Influence of grain size and surface condition on minority-carrier lifetime in undoped n -BaSi2 on Si(111)

Flexible Thermoelectric Generator Based on Polycrystalline SiGe Thin Films

Formation of high-photoresponsivity BaSi2 films on glass substrate by radio-frequency sputtering for solar cell applications

Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films

Co-sputtering deposition of high-photoresponsivity and high-mobility polycrystalline BaSi2 films on Si substrates

Bayesian optimization-driven enhancement of the thermoelectric properties of polycrystalline III-V semiconductor thin films

Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors

Zn1-xGexOy Passivating Interlayers for BaSi2 Thin-Film Solar Cells

High-temperature post-annealing effect on the surface morphology and photoresponse and electrical properties of B-doped BaSi2 films grown by molecular beam epitaxy under various Ba-to-Si deposition rate ratios

Metal Catalysts for Layer-Exchange Growth of Multilayer Graphene

Three-Dimensionally Orientation-Controlled Ge Rods on an Insulator Formed by Low-Temperature Ni-Induced Lateral Crystallization

High Thermoelectric Performance in Polycrystalline GeSiSn Ternary Alloy Thin Films

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