UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

High thermoelectric power factors in polycrystalline germanium thin films

Applied physics letters, 2021-09, Vol.119 (13)

2021

Volltextzugriff (PDF)

Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

Applied physics letters, 2014-01, Vol.104 (2)

2014

Volltextzugriff (PDF)

Thermoelectric properties of low-temperature-grown polycrystalline InAs1−xSbx films

Applied physics letters, 2024-01, Vol.124 (1)

2024

Volltextzugriff (PDF)

Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon

Journal of applied physics, 2012-10, Vol.112 (8)

2012

Volltextzugriff (PDF)

Si1–xGex anode synthesis on plastic films for flexible rechargeable batteries

Scientific reports, 2022-08, Vol.12 (1), p.13779-13779, Article 13779

2022

Volltextzugriff (PDF)

High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures

Applied physics letters, 2023-05, Vol.122 (20)

2023

Volltextzugriff (PDF)

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Applied physics letters, 2012-08, Vol.101 (7), p.72106

2012

Volltextzugriff (PDF)

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

Journal of applied physics, 2017-10, Vol.122 (15)

2017

Volltextzugriff (PDF)

Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers

Scientific reports, 2021-05, Vol.11 (1), p.10159-10159, Article 10159

2021

Volltextzugriff (PDF)

Improved thermoelectric performance of flexible p-type SiGe films by B-doped Al-induced layer exchange

Journal of physics. D, Applied physics, 2020-02, Vol.53 (7), p.75105

2020

Volltextzugriff (PDF)

70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

Applied physics letters, 2015-02, Vol.106 (8)

2015

Volltextzugriff (PDF)

Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon

Applied physics letters, 2017-01, Vol.110 (3)

2017

Volltextzugriff (PDF)

High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange

Applied physics letters, 2017-12, Vol.111 (24)

2017

Volltextzugriff (PDF)

Silver-induced layer exchange for polycrystalline germanium on a flexible plastic substrate

Journal of applied physics, 2017-12, Vol.122 (21)

2017

Volltextzugriff (PDF)

Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics

Applied physics letters, 2020-05, Vol.116 (18)

2020

Volltextzugriff (PDF)

High-electron-mobility (370 cm 2 /Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization

Scientific reports, 2019-11, Vol.9 (1), p.16558-6, Article 16558

2019

Volltextzugriff (PDF)

Thermoelectric properties of sintered Ba2AgSi3 crystals and search for impurities to control conductivity type by first-principles calculation

Journal of applied physics, 2024-02, Vol.135 (7)

2024

Volltextzugriff (PDF)

Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange

Journal of applied physics, 2014-03, Vol.115 (9)

2014

Volltextzugriff (PDF)

High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer

Applied physics letters, 2019-04, Vol.114 (14)

2019

Volltextzugriff (PDF)

Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy

Thin solid films, 2012-11, Vol.522, p.95-99

2012

Volltextzugriff (PDF)

Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange

Applied physics letters, 2020-10, Vol.117 (16)

2020

Volltextzugriff (PDF)

Impact of the carbon membrane inserted below Ni in the layer exchange of multilayer graphene

CrystEngComm, 2020-01, Vol.22 (18), p.316-319

2020

Volltextzugriff (PDF)

Solid-phase crystallization of densified amorphous GeSn leading to high hole mobility (540 cm2/V s)

Applied physics letters, 2019-03, Vol.114 (11)

2019

Volltextzugriff (PDF)

High-hole mobility Si1-Ge (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization

Journal of alloys and compounds, 2018-10, Vol.766, p.417-420

2018

Volltextzugriff (PDF)

High thermoelectric performance in polycrystalline Yb3Ge5 thin films

APL materials, 2024-02, Vol.12 (2), p.021119-021119-6

2024

Volltextzugriff (PDF)

1 – 25 von 423

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(361)
Mit Volltextzugriff
(375)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(296)
Physical Sciences
(168)
Life Sciences & Biomedicine
(110)
Physics
(107)
Technology
(94)
Biological And Medical Sciences
(81)
Physics, Applied
(74)
Chemistry
(71)
Fundamental And Applied Biological Sciences. Psychology
(52)
Exact Sciences And Technology
(51)
Humans
(50)
Materials Science
(49)
Instruments & Instrumentation
(44)
Materials Science, Multidisciplinary
(44)
Animals
(37)
Electrochemistry
(34)
Chemistry, Analytical
(33)
Medical Sciences
(31)
Female
(30)
Male
(30)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

High thermoelectric power factors in polycrystalline germanium thin films

Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

Thermoelectric properties of low-temperature-grown polycrystalline InAs1−xSbx films

Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon

Si1–xGex anode synthesis on plastic films for flexible rechargeable batteries

High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers

Improved thermoelectric performance of flexible p-type SiGe films by B-doped Al-induced layer exchange

70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon

High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange

Silver-induced layer exchange for polycrystalline germanium on a flexible plastic substrate

Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics

High-electron-mobility (370 cm 2 /Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization

Thermoelectric properties of sintered Ba2AgSi3 crystals and search for impurities to control conductivity type by first-principles calculation

Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange

High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer

Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy

Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange

Impact of the carbon membrane inserted below Ni in the layer exchange of multilayer graphene

Solid-phase crystallization of densified amorphous GeSn leading to high hole mobility (540 cm2/V s)

High-hole mobility Si1-Ge (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization

High thermoelectric performance in polycrystalline Yb3Ge5 thin films

Suchergebnisse filtern