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High thermoelectric power factors in polycrystalline germanium thin films

Applied physics letters, 2021-09, Vol.119 (13)

2021

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Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Thermoelectric properties of low-temperature-grown polycrystalline InAs1−xSbx films

Applied physics letters, 2024-01, Vol.124 (1)

2024

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Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon

Journal of applied physics, 2012-10, Vol.112 (8)

2012

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High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures

Applied physics letters, 2023-05, Vol.122 (20)

2023

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Si1–xGex anode synthesis on plastic films for flexible rechargeable batteries

Scientific reports, 2022-08, Vol.12 (1), p.13779-13779, Article 13779

2022

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Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

Journal of applied physics, 2017-10, Vol.122 (15)

2017

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Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Applied physics letters, 2012-08, Vol.101 (7), p.72106

2012

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Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers

Scientific reports, 2021-05, Vol.11 (1), p.10159-10159, Article 10159

2021

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Improved thermoelectric performance of flexible p-type SiGe films by B-doped Al-induced layer exchange

Journal of physics. D, Applied physics, 2020-02, Vol.53 (7), p.75105

2020

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70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

Applied physics letters, 2015-02, Vol.106 (8)

2015

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Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon

Applied physics letters, 2017-01, Vol.110 (3)

2017

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High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange

Applied physics letters, 2017-12, Vol.111 (24)

2017

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Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics

Applied physics letters, 2020-05, Vol.116 (18)

2020

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Silver-induced layer exchange for polycrystalline germanium on a flexible plastic substrate

Journal of applied physics, 2017-12, Vol.122 (21)

2017

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High-electron-mobility (370 cm 2 /Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization

Scientific reports, 2019-11, Vol.9 (1), p.16558-6, Article 16558

2019

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Thermoelectric properties of sintered Ba2AgSi3 crystals and search for impurities to control conductivity type by first-principles calculation

Journal of applied physics, 2024-02, Vol.135 (7)

2024

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Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange

Journal of applied physics, 2014-03, Vol.115 (9)

2014

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High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer

Applied physics letters, 2019-04, Vol.114 (14)

2019

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Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy

Thin solid films, 2012-11, Vol.522, p.95-99

2012

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Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange

Applied physics letters, 2020-10, Vol.117 (16)

2020

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Impact of the carbon membrane inserted below Ni in the layer exchange of multilayer graphene

CrystEngComm, 2020-01, Vol.22 (18), p.316-319

2020

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Solid-phase crystallization of densified amorphous GeSn leading to high hole mobility (540 cm2/V s)

Applied physics letters, 2019-03, Vol.114 (11)

2019

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High-hole mobility Si1-Ge (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization

Journal of alloys and compounds, 2018-10, Vol.766, p.417-420

2018

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High thermoelectric performance in polycrystalline Yb3Ge5 thin films

APL materials, 2024-02, Vol.12 (2), p.021119-021119-6

2024

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