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A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging

IEEE journal of selected topics in quantum electronics, 2024-01, Vol.30 (1: Single-Photon Technologies), p.1-10

2024

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Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

IEEE journal of selected topics in quantum electronics, 2024-01, Vol.30 (1: Single-Photon Technologies and Applications), p.1-7

2024

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Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Applied physics letters, 2007-06, Vol.90 (26), p.263507-263507-3

2007

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Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2778-2785

2007

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Performance comparison of cross-like Hall plates with different covering layers

Sensors (Basel, Switzerland), 2014-12, Vol.15 (1), p.672-686

2014

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Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices

Sensors (Basel, Switzerland), 2016-01, Vol.16 (1), p.106

2016

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Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

Journal of applied physics, 2008-05, Vol.103 (10), p.104504-104504-5

2008

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A Modular Three-Dimensional Hall Effect Sensor for Performance Optimization

IEEE sensors journal, 2022-06, Vol.22 (12), p.1-1

2022

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Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.02BC04-02BC04-6

2012

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Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

Applied physics letters, 2007-12, Vol.91 (24), p.243505-243505-3

2007

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Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering

Applied physics letters, 2007-01, Vol.90 (2)

2007

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Strained Silicon-Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors

IEEE electron device letters, 2008-01, Vol.29 (1), p.77-79

2008

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I-MOS Transistor With an Elevated Silicon-Germanium Impact-Ionization Region for Bandgap Engineering

IEEE electron device letters, 2006-12, Vol.27 (12), p.975-977

2006

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High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing

Applied physics letters, 2006-07, Vol.89 (5)

2006

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Cointegration of In Situ Doped Silicon-Carbon Source and Silicon-Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor

IEEE electron device letters, 2008-07, Vol.29 (7), p.731-733

2008

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Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2593

2008

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First Foundry Three-Dimensional Hall Effect Sensor for System-on-Chip Integration

2020 IEEE Sensors, 2020, p.1-3

2020

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Low-power and high-sensitivity system-on-chip hall effect sensor

2017 IEEE SENSORS, 2017, p.1-3

2017

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Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.3077

2008

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Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Journal of applied physics, 2013-01, Vol.113 (4)

2013

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Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors

Applied physics letters, 2007-10, Vol.91 (15), p.153501-153501-3

2007

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Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.3015

2008

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Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

Applied physics letters, 2007-11, Vol.91 (20), p.202105-202105-3

2007

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Simulation and design of a germanium L-shaped impact-ionization MOS transistor

Semiconductor science and technology, 2008-01, Vol.23 (1), p.015012

2008

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A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance

IEEE electron device letters, 2008-02, Vol.29 (2), p.189-191

2008

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A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

Performance comparison of cross-like Hall plates with different covering layers

Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

A Modular Three-Dimensional Hall Effect Sensor for Performance Optimization

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering

Strained Silicon-Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors

I-MOS Transistor With an Elevated Silicon-Germanium Impact-Ionization Region for Bandgap Engineering

High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing

Cointegration of In Situ Doped Silicon-Carbon Source and Silicon-Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor

Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

First Foundry Three-Dimensional Hall Effect Sensor for System-on-Chip Integration

Low-power and high-sensitivity system-on-chip hall effect sensor

Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors

Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology

Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

Simulation and design of a germanium L-shaped impact-ionization MOS transistor

A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance

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