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Defect distribution in InGaAsN/GaAs multilayer solar cells

Solar energy, 2016-07, Vol.132, p.587-590

2016

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Determination of composition of non-homogeneous GaInNAs layers

Journal of crystal growth, 2016-01, Vol.433, p.105-113

2016

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Position of fermi level on Al0.2Ga0.8N surface and distribution of electric field in Al0.2Ga0.8N/GaN heterostructures without and with AlN layer

Journal of applied physics, 2014-04, Vol.115 (13)

2014

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Optical spectroscopy studies of atom intermixing in the core versus growth temperature of the claddings in MOCVD-grown quantum cascade lasers

Journal of physics communications, 2019-12, Vol.3 (12), p.125007

2019

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Contactless electromodulation spectroscopy of AlGaN∕GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance

Journal of applied physics, 2006-07, Vol.100 (1)

2006

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LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

Opto-electronics review, 2016-06, Vol.24 (2)

2016

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Contactless electroreflectance study of band gap renormalization for Mg-doped GaN

Journal of physics. D, Applied physics, 2008-08, Vol.41 (16), p.165109-165109 (4)

2008

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Technology of ZnO nanofibers based devices

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-09, Vol.177 (15), p.1299-1303

2012

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Study of grain boundaries influence on electrical properties of nitrides

Vacuum, 2008-06, Vol.82 (10), p.1034-1039

2008

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MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications

Crystal research and technology (1979), 2012-03, Vol.47 (3), p.313-320

2012

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Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers

Journal of physics. Conference series, 2009-01, Vol.146 (1), p.012034

2009

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Cross-sectional and surface Raman mapping of thick GaN layers

Crystal research and technology (1979), 2008-12, Vol.43 (12), p.1339-1344

2008

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Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures

Materials science--Poland, 2012-12, Vol.30 (4), p.342-347

2012

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Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy

Applied surface science, 2008-05, Vol.254 (15), p.4845-4855

2008

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Investigation of the influence of the initial step of deposition on the properties of gallium nitride layer

Journal of physics. Conference series, 2009-01, Vol.146 (1), p.012010

2009

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Reverse engineering of AlxGa1−xAs/GaAs structures composition by reflectance spectroscopy

Opto-electronics review, 2011, Vol.19 (4), p.418-424

2011

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AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation

Acta physica Polonica, A, 2009-11, Vol.116 (5), p.800-805

2009

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Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3

Materials science--Poland, 2011-12, Vol.29 (4), p.260-265

2011

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Optimization of GaN nucleation layer deposition conditions on sapphire substrates in HVPE system

Vacuum, 2008-06, Vol.82 (10), p.988-993

2008

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APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures

Vacuum, 2007-12, Vol.82 (4), p.377-382

2007

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Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates

Journal of crystal growth, 2008-11, Vol.310 (23), p.4891-4895

2008

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Properties of GaN layers deposited on AlN/sapphire template substrates

Journal of physics. Conference series, 2009-01, Vol.146 (1), p.012011

2009

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Photoreflectance study of δ-doped semiconductor layers by a fast Fourier transformation

Thin solid films, 2000-12, Vol.380 (1), p.243-245

2000

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Room temperature photoreflectance of different electron concentration GaN epitaxial layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-12, Vol.96 (3), p.284-288

2002

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New nanocrystalline powder substrates for nitrides layer epitaxy

Vacuum, 2008-06, Vol.82 (10), p.971-976

2008

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Defect distribution in InGaAsN/GaAs multilayer solar cells

Determination of composition of non-homogeneous GaInNAs layers

Position of fermi level on Al0.2Ga0.8N surface and distribution of electric field in Al0.2Ga0.8N/GaN heterostructures without and with AlN layer

Optical spectroscopy studies of atom intermixing in the core versus growth temperature of the claddings in MOCVD-grown quantum cascade lasers

Contactless electromodulation spectroscopy of AlGaN∕GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

Contactless electroreflectance study of band gap renormalization for Mg-doped GaN

Technology of ZnO nanofibers based devices

Study of grain boundaries influence on electrical properties of nitrides

MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications

Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers

Cross-sectional and surface Raman mapping of thick GaN layers

Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures

Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy

Investigation of the influence of the initial step of deposition on the properties of gallium nitride layer

Reverse engineering of AlxGa1−xAs/GaAs structures composition by reflectance spectroscopy

AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation

Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3

Optimization of GaN nucleation layer deposition conditions on sapphire substrates in HVPE system

APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures

Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates

Properties of GaN layers deposited on AlN/sapphire template substrates

Photoreflectance study of δ-doped semiconductor layers by a fast Fourier transformation

Room temperature photoreflectance of different electron concentration GaN epitaxial layers

New nanocrystalline powder substrates for nitrides layer epitaxy

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