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Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

Journal of physics. D, Applied physics, 2014-03, Vol.47 (12), p.1-27

2014

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Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

Scientific reports, 2021-01, Vol.11 (1), p.357-357, Article 357

2021

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Cryogenic etching of silicon compounds using a CHF3 based plasma

Journal of applied physics, 2023-03, Vol.133 (11)

2023

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Author Correction: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

Scientific reports, 2022-02, Vol.12 (1), p.1979-1979, Article 1979

2022

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Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma

Applied physics letters, 2019-10, Vol.115 (15)

2019

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Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

Scientific reports, 2018-01, Vol.8 (1), p.1886-12, Article 1886

2018

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The role of physisorption in the cryogenic etching process of silicon

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SE), p.SEEB03

2019

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Modification of poly(styrene) thin films and enhancement of cryogenic plasma etching resistance by ruthenium tetroxide vapor staining

Polymer (Guilford), 2015-10, Vol.76, p.123-130

2015

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The effect of SF6 addition in a Cl2/Ar inductively coupled plasma for deep titanium etching

Journal of micromechanics and microengineering, 2018-03, Vol.28 (5)

2018

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Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas

Journal of physics. D, Applied physics, 2015-11, Vol.48 (43)

2015

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Alternated process for the deep etching of titanium

Journal of micromechanics and microengineering, 2014-07, Vol.24 (7), p.75021-10

2014

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Boron acceptor concentration in diamond from excitonic recombination intensities

Physical review. B, Condensed matter and materials physics, 2011-02, Vol.83 (7), Article 073201

2011

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Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

Journal of crystal growth, 2011-11, Vol.335 (1), p.31-36

2011

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Study of dc micro-discharge arrays made in silicon using CMOS compatible technology

Journal of physics. D, Applied physics, 2012-07, Vol.45 (28), p.285202-1-10

2012

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Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches

Vacuum, 2016-11, Vol.133, p.90-97

2016

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Breakdown study of dc silicon micro-discharge devices

Journal of physics. D, Applied physics, 2012-02, Vol.45 (6), p.65201-1-11

2012

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High aspect ratio etched sub-micron structures in silicon obtained by cryogenic plasma deep-etching through perforated polymer thin films

Micro and Nano Engineering, 2018-11, Vol.1, p.42-48

2018

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Silicon columnar microstructures induced by an SF6/O2 plasma

Journal of physics. D, Applied physics, 2005-09, Vol.38 (18), p.3395-3402

2005

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Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects

Journal of micromechanics and microengineering, 2011-08, Vol.21 (8), p.085005-9

2011

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A novel amorphization-etch alternating process for Si(1 0 0)

Journal of micromechanics and microengineering, 2013-04, Vol.23 (4), p.45023-4

2013

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n-Type CVD diamond: Epitaxy and doping

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-10, Vol.176 (17), p.1401-1408

2011

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Integrated micro-plasmas in silicon operating in helium

The European physical journal. D, Atomic, molecular, and optical physics, 2010-12, Vol.60 (3), p.601-608

2010

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The passivation layer formation in the cryo-etching plasma process

Microelectronic engineering, 2007-05, Vol.84 (5), p.1128-1131

2007

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Passivation mechanisms in cryogenic SF6/O2 etching process

Journal of micromechanics and microengineering, 2004-02, Vol.14 (2), p.190-196

2004

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Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film

ECS solid state letters, 2012-11, Vol.2 (2), p.N5-N7

2012

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Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

Cryogenic etching of silicon compounds using a CHF3 based plasma

Author Correction: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma

Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

The role of physisorption in the cryogenic etching process of silicon

Modification of poly(styrene) thin films and enhancement of cryogenic plasma etching resistance by ruthenium tetroxide vapor staining

The effect of SF6 addition in a Cl2/Ar inductively coupled plasma for deep titanium etching

Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas

Alternated process for the deep etching of titanium

Boron acceptor concentration in diamond from excitonic recombination intensities

Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

Study of dc micro-discharge arrays made in silicon using CMOS compatible technology

Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches

Breakdown study of dc silicon micro-discharge devices

High aspect ratio etched sub-micron structures in silicon obtained by cryogenic plasma deep-etching through perforated polymer thin films

Silicon columnar microstructures induced by an SF6/O2 plasma

Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects

A novel amorphization-etch alternating process for Si(1 0 0)

n-Type CVD diamond: Epitaxy and doping

Integrated micro-plasmas in silicon operating in helium

The passivation layer formation in the cryo-etching plasma process

Passivation mechanisms in cryogenic SF6/O2 etching process

Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film

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