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Growth of high Bi concentration GaAs1-xBix by molecular beam epitaxy

Applied physics letters, 2012-08, Vol.101 (8)

2012

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The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Journal of applied physics, 2012-06, Vol.111 (11)

2012

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Giant spin-orbit bowing in GaAs1-xBix

Physical review letters, 2006-08, Vol.97 (6), p.067205-067205

2006

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Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8

Journal of applied physics, 2014-12, Vol.116 (22)

2014

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Composition dependence of photoluminescence of GaAs1−xBix alloys

Applied physics letters, 2009-07, Vol.95 (4)

2009

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Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

Applied physics letters, 2008-05, Vol.92 (19)

2008

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Band gap of GaAs1−xBix, 0<x<3.6

Applied physics letters, 2003-06, Vol.82 (22), p.3874-3876

2003

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Molecular beam epitaxy growth of GaAs1−xBix

Applied physics letters, 2003-04, Vol.82 (14), p.2245-2247

2003

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Bi-induced p -type conductivity in nominally undoped Ga(AsBi)

Applied physics letters, 2012-02, Vol.100 (9), p.092109-092109-4

2012

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Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Journal of applied physics, 2013-10, Vol.114 (16)

2013

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Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy

Applied physics letters, 2006-09, Vol.89 (12), p.122103-122103-3

2006

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Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures

Journal of materials science. Materials in electronics, 2023-02, Vol.34 (6), p.480, Article 480

2023

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Growth and fluctuations of suncups on alpine snowpacks

Journal of Geophysical Research: Earth Surface, 2010-12, Vol.115 (F4), p.n/a

2010

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Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

Semiconductor science and technology, 2016-09, Vol.31 (10)

2016

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Raman and AFM studies on nominally undoped, p- and n-type GaAsBi alloys

Journal of alloys and compounds, 2017-10, Vol.722, p.339-343

2017

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Temperature dependence of hole mobility in GaAs1−xBix alloys

Journal of applied physics, 2010-10, Vol.108 (8)

2010

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Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

Journal of applied physics, 2013-04, Vol.113 (13)

2013

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Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures

Journal of physics. D, Applied physics, 2013-02, Vol.46 (6)

2013

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Surface reconstructions during growth of GaAs1―xBix alloys by molecular beam epitaxy

Journal of crystal growth, 2012, Vol.338 (1), p.80-84

2012

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Electron effective mass enhancement in Ga(AsBi) alloys probed by cyclotron resonance spectroscopy

Physical review. B, 2016-12, Vol.94 (23), p.235204, Article 235204

2016

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Atomistic basis for continuum growth equation: Description of morphological evolution of GaAs during molecular beam epitaxy

Thin solid films, 2008-04, Vol.516 (12), p.3705-3728

2008

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Effects of hydrogen on the electronic properties of Ga(AsBi) alloys

Applied physics letters, 2012-11, Vol.101 (22)

2012

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Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy

Journal of crystal growth, 2015-09, Vol.425, p.245-249

2015

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Bismuth surfactant growth of the dilute nitride GaNxAs1-x

Journal of crystal growth, 2005-06, Vol.279 (3-4), p.316-320

2005

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Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x

Applied physics letters, 2005-03, Vol.86 (11)

2005

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Growth of high Bi concentration GaAs1-xBix by molecular beam epitaxy

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Giant spin-orbit bowing in GaAs1-xBix

Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8

Composition dependence of photoluminescence of GaAs1−xBix alloys

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

Band gap of GaAs1−xBix, 0<x<3.6

Molecular beam epitaxy growth of GaAs1−xBix

Bi-induced p -type conductivity in nominally undoped Ga(AsBi)

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy

Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures

Growth and fluctuations of suncups on alpine snowpacks

Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

Raman and AFM studies on nominally undoped, p- and n-type GaAsBi alloys

Temperature dependence of hole mobility in GaAs1−xBix alloys

Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures

Surface reconstructions during growth of GaAs1―xBix alloys by molecular beam epitaxy

Electron effective mass enhancement in Ga(AsBi) alloys probed by cyclotron resonance spectroscopy

Atomistic basis for continuum growth equation: Description of morphological evolution of GaAs during molecular beam epitaxy

Effects of hydrogen on the electronic properties of Ga(AsBi) alloys

Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy

Bismuth surfactant growth of the dilute nitride GaNxAs1-x

Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x

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