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Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

Journal of applied physics, 1998-10, Vol.84 (7), p.3830-3835

1998

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Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials

Physical review letters, 1998-10, Vol.81 (16), p.3443-3446

1998

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Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques

Nanotechnology, 2001-03, Vol.12 (1), p.32-37

2001

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The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)

Journal of applied physics, 2001-04, Vol.89 (7), p.3662-3667

2001

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The Formation of Nitridation Damage during the Growth of GaN on GaAs(001)

Japanese Journal of Applied Physics, 2001, Vol.40 (2R), p.472-475

2001

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Nanocrystals at MBE-grown GaN/GaAs(001) interfaces

Applied surface science, 2000-10, Vol.166 (1), p.317-321

2000

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Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy

Journal of applied physics, 2001-02, Vol.89 (3), p.1954-1958

2001

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Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Physical review. B, Condensed matter, 1995-09, Vol.52 (12), p.R8643-R8645

1995

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Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE

Applied surface science, 2000-10, Vol.166 (1), p.423-427

2000

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Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAs

Applied surface science, 2000-10, Vol.166 (1-4), p.259-262

2000

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Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.685-688

1999

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Detection of DX-like trapping centres in delta-doped pseudomorphic InxGa1−xAs quantum wells

Solid-state electronics, 1999-01, Vol.43 (1), p.141-145

1999

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Two-dimensional limitations when increasing the Si-concentration from δ-doping to thin Si-layers in GaAs

Journal of crystal growth, 1997-05, Vol.175-176, p.234-237

1997

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Surface reconstruction and surface morphology of GaN grown by MBE on GaAs (001)

Physica scripta, 1999-01, Vol.1999 (1), p.198

1999

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Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells

Applied physics letters, 1994-07, Vol.65 (3), p.336-337

1994

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Arsenic Diffusion in Intrinsic Gallium Arsenide

MRS proceedings, 1998, Vol.527, Article 347

1998

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Spiral growth of GaAs by molecular beam epitaxy

Applied physics letters, 1994-09, Vol.65 (12), p.1552-1554

1994

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Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

MRS Internet journal of nitride semiconductor research, 1998, Vol.3, Article e14

1998

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Strain recovery in partially relaxed In0.2Ga0.8As/GaAs single quantum wells with increasing GaAs cap layer thickness

Semiconductor science and technology, 1994-06, Vol.9 (6), p.1230-1233

1994

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Optical Properties of GaNAs Grown by MBE

MRS Internet journal of nitride semiconductor research, 1998, Vol.3, Article e29

1998

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Surface morphology and compositional variations in molecular beam epitaxy grown GaNxAs1−x alloys

Nanostructured materials, 1999, Vol.12 (1-4), p.425-428

1999

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Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials

Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques

The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)

The Formation of Nitridation Damage during the Growth of GaN on GaAs(001)

Nanocrystals at MBE-grown GaN/GaAs(001) interfaces

Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy

Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE

Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAs

Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

Detection of DX-like trapping centres in delta-doped pseudomorphic InxGa1−xAs quantum wells

Two-dimensional limitations when increasing the Si-concentration from δ-doping to thin Si-layers in GaAs

Surface reconstruction and surface morphology of GaN grown by MBE on GaAs (001)

Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells

Arsenic Diffusion in Intrinsic Gallium Arsenide

Spiral growth of GaAs by molecular beam epitaxy

Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

Strain recovery in partially relaxed In0.2Ga0.8As/GaAs single quantum wells with increasing GaAs cap layer thickness

Optical Properties of GaNAs Grown by MBE

Surface morphology and compositional variations in molecular beam epitaxy grown GaNxAs1−x alloys

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