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Polarization fields of III-nitrides grown in different crystal orientations

Journal of physics. Condensed matter, 2007-10, Vol.19 (40), p.403201-403201 (26)

2007

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Persistent photoconductivity in ZnO nanowires: Influence of oxygen and argon ambient

Journal of applied physics, 2017-03, Vol.121 (12)

2017

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Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state

Journal of applied physics, 2016-04, Vol.119 (15)

2016

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Growth and doping of semipolar GaN grown on patterned sapphire substrates

Journal of crystal growth, 2014-11, Vol.405, p.97-101

2014

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Evidence of terbium and oxygen co-segregation in annealed AlN:Tb

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Composition dependent valence band order in c-oriented wurtzite AlGaN layers

Journal of applied physics, 2014-09, Vol.116 (11)

2014

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Stacking fault emission in GaN: Influence of n-type doping

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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Donor–acceptor pair transitions in ZnO substrate material

Physica. B, Condensed matter, 2001-12, Vol.308, p.945-948

2001

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Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Applied physics letters, 2013-09, Vol.103 (12)

2013

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c-plane ZnO on a-plane sapphire: Inclusion of (11¯01) domains

Journal of crystal growth, 2015-06, Vol.419, p.128-132

2015

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Three-dimensional GaN for semipolar light emitters

Physica Status Solidi (b), 2011-03, Vol.248 (3), p.549-560

2011

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Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs

Journal of crystal growth, 2013-05, Vol.370, p.319-322

2013

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Determination of donor and DX center capture characteristics by pulsed photoluminescence

Journal of applied physics, 2018-03, Vol.123 (9)

2018

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Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures

Journal of applied physics, 2014-11, Vol.116 (18)

2014

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Influence of strain on the band gap energy of wurtzite InN

Physica Status Solidi (b), 2009-06, Vol.246 (6), p.1177-1180

2009

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Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN

Journal of applied physics, 2015-12, Vol.118 (21)

2015

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Nanoporous Gold Films Created Using Templates Formed from Self-Assembled Structures of Inorganic-Block Copolymer Micelles

Advanced materials (Weinheim), 2003-05, Vol.15 (10), p.829-831

2003

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Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy

Journal of applied physics, 2016-05, Vol.119 (17)

2016

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Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering

Applied physics letters, 2009-07, Vol.95 (3), p.031903-031903-3

2009

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Optimization of nucleation and buffer layer growth for improved GaN quality

Journal of crystal growth, 2007-10, Vol.308 (1), p.30-36

2007

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Breath figures: Self-organizing masks for the fabrication of photonic crystals and dichroic filters

Journal of applied physics, 2004-09, Vol.96 (6), p.3065-3069

2004

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Catalytic coating of virus particles with zinc oxide

Electrochimica acta, 2009-09, Vol.54 (22), p.5149-5154

2009

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Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets

Applied physics letters, 2006-12, Vol.89 (24)

2006

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Quaternary AlxInyGa1―x―yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission

Journal of crystal growth, 2011-01, Vol.315 (1), p.254-257

2011

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Luminescence properties of epitaxially grown GaN and InGaN layers around ZnO nanopillars

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1582-1585

2011

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Polarization fields of III-nitrides grown in different crystal orientations

Persistent photoconductivity in ZnO nanowires: Influence of oxygen and argon ambient

Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state

Growth and doping of semipolar GaN grown on patterned sapphire substrates

Evidence of terbium and oxygen co-segregation in annealed AlN:Tb

Composition dependent valence band order in c-oriented wurtzite AlGaN layers

Stacking fault emission in GaN: Influence of n-type doping

Donor–acceptor pair transitions in ZnO substrate material

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

c-plane ZnO on a-plane sapphire: Inclusion of (11¯01) domains

Three-dimensional GaN for semipolar light emitters

Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs

Determination of donor and DX center capture characteristics by pulsed photoluminescence

Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures

Influence of strain on the band gap energy of wurtzite InN

Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN

Nanoporous Gold Films Created Using Templates Formed from Self-Assembled Structures of Inorganic-Block Copolymer Micelles

Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy

Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering

Optimization of nucleation and buffer layer growth for improved GaN quality

Breath figures: Self-organizing masks for the fabrication of photonic crystals and dichroic filters

Catalytic coating of virus particles with zinc oxide

Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets

Quaternary AlxInyGa1―x―yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission

Luminescence properties of epitaxially grown GaN and InGaN layers around ZnO nanopillars

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