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Potential-induced degradation of encapsulant-less p-type crystalline Si photovoltaic modules

Japanese Journal of Applied Physics, 2023-08, Vol.62 (SK), p.SK1039

2023

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Crystallization of catalytic CVD hydrogenated n-a-Si films on textured glass substrates by flash lamp annealing

Japanese Journal of Applied Physics, 2022-02, Vol.61 (SB), p.SB1019

2022

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Effect of temperature and pre-annealing on the potential-induced degradation of silicon heterojunction photovoltaic modules

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1021

2022

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Influence of light irradiation on the charge-accumulation-type potential-induced degradation of n-type front-emitter crystalline Si photovoltaic modules

Japanese Journal of Applied Physics, 2022-02, Vol.61 (SB), p.SB1023

2022

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Tunnel nitride passivated contacts for silicon solar cells formed by catalytic CVD

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBF09

2021

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Carrier lifetime measurement of perovskite films by differential microwave photoconductivity decay

Japanese Journal of Applied Physics, 2022-06, Vol.61 (6), p.68001

2022

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Use of n-type amorphous silicon films as an electron transport layer in the perovskite solar cells

Japanese Journal of Applied Physics, 2022-02, Vol.61 (SB), p.SB1012

2022

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Long-term stability of low-temperature deposited Cat-CVD SiNx thin film against damp-heat stress

Japanese Journal of Applied Physics, 2024-01, Vol.63 (1), p.01SP25

2024

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High Passivation Performance of Cat-CVD i‑a-Si:H Derived from Bayesian Optimization with Practical Constraints

ACS applied materials & interfaces, 2024-02, Vol.16 (7), p.9428-9435

2024

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Delay of the potential-induced degradation of n-type crystalline silicon photovoltaic modules by the prior application of reverse bias

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Cat-CVD SiNx as a gas barrier for application to perovskite solar cells

Japanese Journal of Applied Physics, 2022-12, Vol.61 (12), p.121002

2022

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Hole‐Selective Ultrathin Al‐Doped SiOx Passivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution

Physica status solidi. PSS-RRL. Rapid research letters, 2022-07, Vol.16 (7), p.n/a

2022

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Investigation of Polysilazane-Based SiO2 Gate Insulator for Oxide Semiconductor Thin-Film Transistors

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1149-1153

2013

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Tungsten-Doped ZnO as an Electron Transport Layer for Perovskite Solar Cells: Enhancing Efficiency and Stability

ACS applied materials & interfaces, 2024-07, Vol.16 (28), p.36255-36271

2024

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Conversion of the conduction type of a catalytic-chemical-vapor-deposited p-type a-Si by PH3 plasma ion implantation

Thin solid films, 2019-08, Vol.683, p.150-155

2019

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Texture size control by mixing glass microparticles with alkaline solution for crystalline silicon solar cells

Journal of materials research, 2018-06, Vol.33 (11), p.1515-1522

2018

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High-quality surface passivation of crystalline silicon with chemical resistance and optical transparency by using catalytic chemical vapor deposition SiNx layers and an ultrathin SiOx film

Japanese Journal of Applied Physics, 2018-08, Vol.57 (8S3)

2018

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High-Performance Solution-Processed ZrInZnO Thin-Film Transistors

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.320-326

2013

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Fabrication of source and drain regions of self-aligned ZrInZnO thin-film transistors using a solution of tin and poly(propylene carbonate)

Japanese Journal of Applied Physics, 2015-10, Vol.54 (10), p.106501

2015

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Investigation of Polysilazane-Based \hbox Gate Insulator for Oxide Semiconductor Thin-Film Transistors

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1149-1153

2013

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Long-term stability of low-temperature deposited Cat-CVD SiN x thin film against damp-heat stress

Japanese Journal of Applied Physics, 2024-01, Vol.63 (1), p.1

2024

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Ultrathin Al-doped SiO x passivating hole-selective contacts formed by a simple wet process

Japanese Journal of Applied Physics, 2023-08, Vol.62 (SK), p.SK1040

2023

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Ultrathin Al-doped SiOx passivating hole-selective contacts formed by a simple wet process

Japanese Journal of Applied Physics, 2023-08, Vol.62 (SK), p.SK1040

2023

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P-1: Distinguished Poster: Fabrication of a Self-Aligned ZrInZnO Thin-Film Transistor Using Polypropylene Carbonate Solution

SID International Symposium Digest of technical papers, 2014-06, Vol.45 (1), p.945-948

2014

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Hole‐Selective Ultrathin Al‐Doped SiO x Passivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution

Physica status solidi. PSS-RRL. Rapid research letters, 2022-07, Vol.16 (7)

2022

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Potential-induced degradation of encapsulant-less p-type crystalline Si photovoltaic modules

Crystallization of catalytic CVD hydrogenated n-a-Si films on textured glass substrates by flash lamp annealing

Effect of temperature and pre-annealing on the potential-induced degradation of silicon heterojunction photovoltaic modules

Influence of light irradiation on the charge-accumulation-type potential-induced degradation of n-type front-emitter crystalline Si photovoltaic modules

Tunnel nitride passivated contacts for silicon solar cells formed by catalytic CVD

Carrier lifetime measurement of perovskite films by differential microwave photoconductivity decay

Use of n-type amorphous silicon films as an electron transport layer in the perovskite solar cells

Long-term stability of low-temperature deposited Cat-CVD SiNx thin film against damp-heat stress

High Passivation Performance of Cat-CVD i‑a-Si:H Derived from Bayesian Optimization with Practical Constraints

Delay of the potential-induced degradation of n-type crystalline silicon photovoltaic modules by the prior application of reverse bias

Cat-CVD SiNx as a gas barrier for application to perovskite solar cells

Hole‐Selective Ultrathin Al‐Doped SiOx Passivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution

Investigation of Polysilazane-Based SiO2 Gate Insulator for Oxide Semiconductor Thin-Film Transistors

Tungsten-Doped ZnO as an Electron Transport Layer for Perovskite Solar Cells: Enhancing Efficiency and Stability

Conversion of the conduction type of a catalytic-chemical-vapor-deposited p-type a-Si by PH3 plasma ion implantation

Texture size control by mixing glass microparticles with alkaline solution for crystalline silicon solar cells

High-quality surface passivation of crystalline silicon with chemical resistance and optical transparency by using catalytic chemical vapor deposition SiNx layers and an ultrathin SiOx film

High-Performance Solution-Processed ZrInZnO Thin-Film Transistors

Fabrication of source and drain regions of self-aligned ZrInZnO thin-film transistors using a solution of tin and poly(propylene carbonate)

Investigation of Polysilazane-Based \hbox Gate Insulator for Oxide Semiconductor Thin-Film Transistors

Long-term stability of low-temperature deposited Cat-CVD SiN x thin film against damp-heat stress

Ultrathin Al-doped SiO x passivating hole-selective contacts formed by a simple wet process

Ultrathin Al-doped SiOx passivating hole-selective contacts formed by a simple wet process

P-1: Distinguished Poster: Fabrication of a Self-Aligned ZrInZnO Thin-Film Transistor Using Polypropylene Carbonate Solution

Hole‐Selective Ultrathin Al‐Doped SiO x Passivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution

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