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Ab initio energetics of boron-interstitial clusters in crystalline Si

Applied physics letters, 2000-09, Vol.77 (12), p.1834-1836

2000

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Atomic scale models of ion implantation and dopant diffusion in silicon

Thin solid films, 2000-04, Vol.365 (2), p.219-230

2000

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Atomic scale models of ion implantation and dopant diffusion in silicon: Process and materials modeling in IC fabrication

Thin solid films, 2000, Vol.365 (2), p.219-230

2000

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Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study

Physical review letters, 1999-11, Vol.83 (21), p.4341-4344

1999

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Predictive simulation of transient activation processes in boron-doped silicon structures

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.493-496

1998

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Defect and dopant diffusion in ion implanted silicon: an atomic scale simulation approach

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.489-492

1998

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Linking ab initio Energetics to Experiment: Kinetic Monte Carlo Simulation of Transient Enhanced Diffusion of B in Si

MRS proceedings, 1998, Vol.538, Article 291

1998

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The Effect of Cu Concentration and Distribution on the Lifetimes of Submicron, Bamboo Al(Cu) Runners

MRS proceedings, 1997, Vol.473, Article 387

1997

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In Situ Study of Al 2 Cu Precipitate Evolution During Zlectromigration in Submicron Al Interconnects

MRS proceedings, 1996, Vol.428, Article 207

1996

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In Situ Study of Al2Cu Precipitate Evolution During Zlectromigration in Submicron Al Interconnects

MRS proceedings, 1996, Vol.428

1996

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Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy

Applied physics letters, 1995-01, Vol.66 (4), p.448-450

1995

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Direct Observation of the Effects of Cu Distribution on Electromigration Phenomena in Submicron Al Interconnects

MRS proceedings, 1995, Vol.403, Article 651

1995

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Mobile Point Defects and Atomic Basis for Structural Transformations of a Crystal Surface

Science (American Association for the Advancement of Science), 1994-07, Vol.265 (5171), p.490-496

1994

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Measurement of Lattice Relaxation During Epitaxy Using Tunneling Microscopy: Ge on Si(111)

MRS proceedings, 1993, Vol.317, Article 15

1993

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Direct measurement of diffusion by hot tunneling microscopy: Activation energy, anisotropy, and long jumps

Physical review letters, 1992-03, Vol.68 (10), p.1567-1570

1992

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Metastable Structural Surface Excitations and Concerted ad Atom Motions: A Stm Study of Atomic Motions Within a Semiconductor Surface

MRS proceedings, 1992, Vol.280, Article 79

1992

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Metastable Structural Surface Excitations and Concerted Adatom Motions: a STM Study of Atomic Motions Within a Semiconductor Surface

MRS proceedings, 1992, Vol.295, Article 41

1992

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Growth and morphology of Pb on Si(111)

Surface science letters, 1991-11, Vol.257 (1), p.A569-A570

1991

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Growth and morphology of Pb on Si(111)

Surface science, 1991-11, Vol.257 (1), p.259-273

1991

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Ab initio energetics of boron-interstitial clusters in crystalline Si

Atomic scale models of ion implantation and dopant diffusion in silicon

Atomic scale models of ion implantation and dopant diffusion in silicon: Process and materials modeling in IC fabrication

Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study

Predictive simulation of transient activation processes in boron-doped silicon structures

Defect and dopant diffusion in ion implanted silicon: an atomic scale simulation approach

Linking ab initio Energetics to Experiment: Kinetic Monte Carlo Simulation of Transient Enhanced Diffusion of B in Si

The Effect of Cu Concentration and Distribution on the Lifetimes of Submicron, Bamboo Al(Cu) Runners

In Situ Study of Al 2 Cu Precipitate Evolution During Zlectromigration in Submicron Al Interconnects

In Situ Study of Al2Cu Precipitate Evolution During Zlectromigration in Submicron Al Interconnects

Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy

Direct Observation of the Effects of Cu Distribution on Electromigration Phenomena in Submicron Al Interconnects

Mobile Point Defects and Atomic Basis for Structural Transformations of a Crystal Surface

Measurement of Lattice Relaxation During Epitaxy Using Tunneling Microscopy: Ge on Si(111)

Direct measurement of diffusion by hot tunneling microscopy: Activation energy, anisotropy, and long jumps

Metastable Structural Surface Excitations and Concerted ad Atom Motions: A Stm Study of Atomic Motions Within a Semiconductor Surface

Metastable Structural Surface Excitations and Concerted Adatom Motions: a STM Study of Atomic Motions Within a Semiconductor Surface

Growth and morphology of Pb on Si(111)

Growth and morphology of Pb on Si(111)

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