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An Artificial Peripheral Neural System Based on Highly Stretchable and Integrated Multifunctional Sensors

Advanced functional materials, 2021-06, Vol.31 (24), p.n/a

2021

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Vertical GAAFETs for the Ultimate CMOS Scaling

IEEE transactions on electron devices, 2015-05, Vol.62 (5), p.1433-1439

2015

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IEEE_Xplore

Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1658-1665

2016

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IEEE_Xplore

Engineered Nucleotide Chemicapacitive Microsensor Array Augmented with Physics‐Guided Machine Learning for High‐Throughput Screening of Cannabidiol

Small (Weinheim an der Bergstrasse, Germany), 2022-06, Vol.18 (22), p.e2107659-n/a

2022

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Percolation theory based statistical resistance model for resistive random access memory

Applied physics letters, 2018-06, Vol.112 (25)

2018

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Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium

IEEE electron device letters, 2016-04, Vol.37 (4), p.482-485

2016

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IEEE_Xplore

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Nature communications, 2019-11, Vol.10 (1), p.1-12, Article 5201

2019

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Low Subthreshold Swing and High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

IEEE electron device letters, 2020-06, Vol.41 (6), p.856-859

2020

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IEEE_Xplore

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1050-1056

2021

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IEEE_Xplore

The Design of CMOS-Compatible Plasmonic Waveguides for Intra-Chip Communication

IEEE photonics journal, 2020-10, Vol.12 (5), p.1-10

2020

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A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy

Advanced electronic materials, 2019-12, Vol.5 (12), p.n/a

2019

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Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2930-2935

2016

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IEEE_Xplore

A flexible liquid‐metal alloy bandpass filter

International journal of RF and microwave computer-aided engineering, 2018-06, Vol.28 (5), p.e21265-n/a

2018

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A Wireless Multi-Channel Capacitive Sensor System for Efficient Glove-Based Gesture Recognition With AI at the Edge

IEEE transactions on circuits and systems. II, Express briefs, 2020-09, Vol.67 (9), p.1624-1628

2020

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IEEE_Xplore

Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6610-6616

2021

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IEEE_Xplore

A dual-domain 3ω method for measuring the in-plane thermal conductivity of high-conductive thin films

Applied physics letters, 2023-06, Vol.122 (25)

2023

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High-Performance Top-Gated and Double-Gated Oxide-Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-8

2023

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A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems

Journal of applied physics, 2019-06, Vol.125 (22)

2019

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Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI

IEEE transactions on nanotechnology, 2018-11, Vol.17 (6), p.1259-1269

2018

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IEEE_Xplore

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

IEEE electron device letters, 2014-11, Vol.35 (11), p.1097-1099

2014

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IEEE_Xplore

Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts

Applied physics letters, 2016-04, Vol.108 (17)

2016

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Statistical Timing Analysis Considering Device and Interconnect Variability for BEOL Requirements in the 5-nm Node and Beyond

IEEE transactions on very large scale integration (VLSI) systems, 2017-05, Vol.25 (5), p.1669-1680

2017

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IEEE_Xplore

High-Throughput, Area-Efficient, and Variation-Tolerant 3-D In-Memory Compute System for Deep Convolutional Neural Networks

IEEE internet of things journal, 2021-06, Vol.8 (11), p.9219-9232

2021

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IEEE_Xplore

Reconfigurable nonlinear photonic activation function for photonic neural network based on non-volatile opto-resistive RAM switch

Light, science & applications, 2022-10, Vol.11 (1), p.288-288, Article 288

2022

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Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO2/n-Si Contact

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2671-2676

2016

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IEEE_Xplore

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An Artificial Peripheral Neural System Based on Highly Stretchable and Integrated Multifunctional Sensors

Vertical GAAFETs for the Ultimate CMOS Scaling

Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source

Engineered Nucleotide Chemicapacitive Microsensor Array Augmented with Physics‐Guided Machine Learning for High‐Throughput Screening of Cannabidiol

Percolation theory based statistical resistance model for resistive random access memory

Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Low Subthreshold Swing and High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

The Design of CMOS-Compatible Plasmonic Waveguides for Intra-Chip Communication

A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy

Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective

A flexible liquid‐metal alloy bandpass filter

A Wireless Multi-Channel Capacitive Sensor System for Efficient Glove-Based Gesture Recognition With AI at the Edge

Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors

A dual-domain 3ω method for measuring the in-plane thermal conductivity of high-conductive thin films

High-Performance Top-Gated and Double-Gated Oxide-Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect

A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems

Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts

Statistical Timing Analysis Considering Device and Interconnect Variability for BEOL Requirements in the 5-nm Node and Beyond

High-Throughput, Area-Efficient, and Variation-Tolerant 3-D In-Memory Compute System for Deep Convolutional Neural Networks

Reconfigurable nonlinear photonic activation function for photonic neural network based on non-volatile opto-resistive RAM switch

Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO2/n-Si Contact

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