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Impact of stress in ICP-CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs

Electronics letters, 2018-07, Vol.54 (15), p.947-949

2018

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A Planar Gunn Diode Operating Above 100 GHz

IEEE electron device letters, 2007-10, Vol.28 (10), p.849-851

2007

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Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2297-2306

2008

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A low damage Si3N4 sidewall spacer process for self-aligned sub-100nm III–V MOSFETs

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.996-999

2008

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Impact of stress in ICP‐CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs

Electronics letters, 2018-07, Vol.54 (15), p.947-949

2018

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A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor

Microelectronic engineering, 2015-11, Vol.147, p.277-280

2015

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Analysis of membrane support structures for integrated antenna usage on two-dimensional photonic-bandgap structures

IEEE transactions on microwave theory and techniques, 2001-07, Vol.49 (7), p.1254-1261

2001

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50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz

IEEE electron device letters, 2005-11, Vol.26 (11), p.784-786

2005

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High Mobility III-V MOSFETs For RF and Digital Applications

2007 IEEE International Electron Devices Meeting, 2007, p.621-624

2007

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Two methods of realising 10 nm T-gate lithography

Microelectronic engineering, 2009-04, Vol.86 (4), p.1067-1070

2009

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A nanoanalytical investigation of the Ga 2O 3/GaGdO dielectric gate stack for InGaAs based MOSFET devices

Microelectronic engineering, 2009, Vol.86 (7), p.1568-1570

2009

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Dry etching device quality high-κ GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs

Microelectronic engineering, 2010-05, Vol.87 (5-8), p.1587-1589

2010

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Fabrication of 22nm T-gates for HEMT applications

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.1375-1378

2008

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DC―35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications

Electronics letters, 2009-06, Vol.45 (12), p.632-634

2009

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Erratum for ‘DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications’

Electronics letters, 2009, Vol.45 (14), p.764

2009

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Parallel coupled-line bandpass filter with branch-line shape for G-band frequency

Electronics letters, 2009, Vol.45 (16), p.838-840

2009

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Dry etching device quality high-κ Ga x Gd y O z gate oxide in SiCl 4 chemistry for low resistance ohmic contact realisation in fabricating III–V MOSFETs

Microelectronic engineering, 2010, Vol.87 (5), p.1587-1589

2010

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A nanoanalytical investigation of high- k dielectric gate stacks for GaAs based MOSFET devices

Microelectronic engineering, 2009-03, Vol.86 (3), p.214-217

2009

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Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's

IEEE transactions on electron devices, 1993-06, Vol.40 (6), p.1047-1052

1993

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Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm"

IEEE electron device letters, 2008-10, Vol.29 (10), p.1085-1086

2008

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A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1568-1570

2009

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Dry etching of a device quality high-k Ga x Gd y O z gate oxide in CH 4/H 2–O 2 chemistry for the fabrication of III–V MOSFETs

Microelectronic engineering, 2007, Vol.84 (5), p.1124-1127

2007

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Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.966-968

2008

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Comparison of 80-200 nm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs), Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs, and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs

IEEE transactions on electron devices, 1995-12, Vol.42 (12), p.2047-2055

1995

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Planar Gunn-type triode oscillator at 83 GHz

Electronics letters, 2007-07, Vol.43 (15), p.837-838

2007

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Impact of stress in ICP-CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs

A Planar Gunn Diode Operating Above 100 GHz

Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs

A low damage Si3N4 sidewall spacer process for self-aligned sub-100nm III–V MOSFETs

Impact of stress in ICP‐CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs

A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor

Analysis of membrane support structures for integrated antenna usage on two-dimensional photonic-bandgap structures

50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz

High Mobility III-V MOSFETs For RF and Digital Applications

Two methods of realising 10 nm T-gate lithography

A nanoanalytical investigation of the Ga 2O 3/GaGdO dielectric gate stack for InGaAs based MOSFET devices

Dry etching device quality high-κ GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs

Fabrication of 22nm T-gates for HEMT applications

DC―35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications

Erratum for ‘DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications’

Parallel coupled-line bandpass filter with branch-line shape for G-band frequency

Dry etching device quality high-κ Ga x Gd y O z gate oxide in SiCl 4 chemistry for low resistance ohmic contact realisation in fabricating III–V MOSFETs

A nanoanalytical investigation of high- k dielectric gate stacks for GaAs based MOSFET devices

Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's

Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm"

A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices

Dry etching of a device quality high-k Ga x Gd y O z gate oxide in CH 4/H 2–O 2 chemistry for the fabrication of III–V MOSFETs

Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods

Comparison of 80-200 nm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs), Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs, and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs

Planar Gunn-type triode oscillator at 83 GHz

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