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Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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A Planar Gunn Diode Operating Above 100 GHz

IEEE electron device letters, 2007-10, Vol.28 (10), p.849-851

2007

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Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Applied physics letters, 2016-02, Vol.108 (7)

2016

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An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

IEEE electron device letters, 2012-04, Vol.33 (4), p.501-503

2012

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Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures

Microelectronics and reliability, 2010-03, Vol.50 (3), p.360-364

2010

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Two methods of realising 10 nm T-gate lithography

Microelectronic engineering, 2009-04, Vol.86 (4), p.1067-1070

2009

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50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz

IEEE electron device letters, 2005-11, Vol.26 (11), p.784-786

2005

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A nanoanalytical investigation of high- k dielectric gate stacks for GaAs based MOSFET devices

Microelectronic engineering, 2009-03, Vol.86 (3), p.214-217

2009

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Fabrication of 22 nm T-gates for HEMT applications

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.1375-1378

2008

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Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

Electronics letters, 2010-02, Vol.46 (4), p.301-302

2010

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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1564-1567

2009

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Dry etching device quality high-κ GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs

Microelectronic engineering, 2010-05, Vol.87 (5-8), p.1587-1589

2010

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Scaling of pseudomorphic high electron mobility transistors to decanano dimensions

Solid-state electronics, 2002-05, Vol.46 (5), p.631-638

2002

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DC―35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications

Electronics letters, 2009-06, Vol.45 (12), p.632-634

2009

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A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III-V MOSFETs

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.996-999

2008

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Parallel coupled-line bandpass filter with branch-line shape for G-band frequency

Electronics letters, 2009, Vol.45 (16), p.838-840

2009

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Lithography scaling issues associated with III–V MOSFETs

Microelectronic engineering, 2010-05, Vol.87 (5), p.1049-1051

2010

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Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.966-968

2008

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A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1568-1570

2009

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Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Journal of applied physics, 2012-05, Vol.111 (10)

2012

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Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs

Microelectronic engineering, 2007-05, Vol.84 (5-8), p.1124-1127

2007

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An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices

Journal of physics. Conference series, 2010-07, Vol.241 (1), p.012034

2010

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Gallium oxide (Ga 2 O 3) on gallium arsenide—A low defect, high-K system for future devices

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.277-281

2006

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Technology development of 3D detectors for high-energy physics and imaging

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002-07, Vol.487 (1), p.19-26

2002

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High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for X -Band Applications

IEEE electron device letters, 2015-09, Vol.36 (9), p.899-901

2015

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Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

A Planar Gunn Diode Operating Above 100 GHz

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures

Two methods of realising 10 nm T-gate lithography

50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz

A nanoanalytical investigation of high- k dielectric gate stacks for GaAs based MOSFET devices

Fabrication of 22 nm T-gates for HEMT applications

Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs

Dry etching device quality high-κ GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs

Scaling of pseudomorphic high electron mobility transistors to decanano dimensions

DC―35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications

A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III-V MOSFETs

Parallel coupled-line bandpass filter with branch-line shape for G-band frequency

Lithography scaling issues associated with III–V MOSFETs

Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods

A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices

Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs

An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices

Gallium oxide (Ga 2 O 3) on gallium arsenide—A low defect, high-K system for future devices

Technology development of 3D detectors for high-energy physics and imaging

High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for X -Band Applications

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