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Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates

Journal of applied physics, 2019-08, Vol.126 (8)

2019

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Raman and photoluminescence properties of type II GaSb/GaAs quantum dots on (001) Ge substrate

Electronic Materials Letters, 2016, 12(4), , pp.517-523

2016

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InGaAs Quantum Dots on Cross-Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium

Journal of nanomaterials, 2013-01, Vol.2013 (1)

2013

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Competitive Relaxation Mechanisms in Strained Epitaxial InGaSb on GaSb Substrate

Journal of physics. Conference series, 2023-09, Vol.2602 (1), p.12005

2023

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Growth evolution and polarization-dependent photoluminescence of lateral InSb/CdTe nanowires

Journal of crystal growth, 2023-11, Vol.621, p.127366, Article 127366

2023

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Direct growth of InSb nanowires on CdTe (001) substrates by molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2022-11, Vol.285, p.115958, Article 115958

2022

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GaP ring-like nanostructures on GaAs (100) with In0.15Ga0.85As compensation layers

AIP Conference Proceedings, 2013, Vol.1566 (1), p.456

2013

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Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2021-09, Vol.271, p.115309, Article 115309

2021

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Growth of truncated pyramidal InSb nanostructures on GaAs substrate

Journal of crystal growth, 2017-06, Vol.468, p.737-739

2017

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Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields

CrystEngComm, 2016-01, Vol.18 (31), p.5852-5859

2016

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Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures

Journal of crystal growth, 2017-11, Vol.477, p.30-33

2017

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Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate

Journal of crystal growth, 2017-06, Vol.468, p.541-546

2017

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Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties

Journal of crystal growth, 2018-04, Vol.487, p.40-44

2018

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Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate

Journal of crystal growth, 2019-04, Vol.512, p.136-141

2019

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Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

physica status solidi (b), 2020-02, Vol.257 (2), p.n/a

2020

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Investigation of hybrid InSb and GaSb quantum nanostructures

Microelectronic engineering, 2021-01, Vol.237, p.111494, Article 111494

2021

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Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (1), p.1800498-n/a

2019

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Molecular beam epitaxial growth of GaSb quantum dots on (001) GaAs substrate with InGaAs insertion layer

Journal of crystal growth, 2015-09, Vol.425, p.291-294

2015

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Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy

Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (1), p.n/a

2019

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Light-induced circuit parameter variation in self-assembled quantum-dot photovoltaic cell

Materials today : proceedings, 2021, Vol.47, p.3425-3429

2021

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InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxy

Journal of crystal growth, 2011-05, Vol.323 (1), p.275-278

2011

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Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amount

Journal of crystal growth, 2011-05, Vol.323 (1), p.282-285

2011

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Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy (Phys. Status Solidi A 10∕2019)

Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (1), p.n/a

2019

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Study on Spectral Response of GaAlAs/GaAs Staircase Band Gap Photodiodes

Japanese Journal of Applied Physics, 2004-11, Vol.43 (11A), p.7460-7461

2004

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Equivalent Circuit Parameters of Hybrid Quantum-Dot Solar Cells

Materials today : proceedings, 2020, Vol.23, p.767-776

2020

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Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates

Raman and photoluminescence properties of type II GaSb/GaAs quantum dots on (001) Ge substrate

InGaAs Quantum Dots on Cross-Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium

Competitive Relaxation Mechanisms in Strained Epitaxial InGaSb on GaSb Substrate

Growth evolution and polarization-dependent photoluminescence of lateral InSb/CdTe nanowires

Direct growth of InSb nanowires on CdTe (001) substrates by molecular beam epitaxy

GaP ring-like nanostructures on GaAs (100) with In0.15Ga0.85As compensation layers

Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates

Growth of truncated pyramidal InSb nanostructures on GaAs substrate

Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields

Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures

Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate

Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties

Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

Investigation of hybrid InSb and GaSb quantum nanostructures

Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Molecular beam epitaxial growth of GaSb quantum dots on (001) GaAs substrate with InGaAs insertion layer

Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy

Light-induced circuit parameter variation in self-assembled quantum-dot photovoltaic cell

InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxy

Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amount

Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy (Phys. Status Solidi A 10∕2019)

Study on Spectral Response of GaAlAs/GaAs Staircase Band Gap Photodiodes

Equivalent Circuit Parameters of Hybrid Quantum-Dot Solar Cells

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