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175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

Applied physics letters, 2006-12, Vol.89 (25)

2006

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Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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Behavioural interactions between sika deer and Japanese serows: are larger and gregarious ungulates dominant?

Behaviour, 2023-06, Vol.160 (7), p.661-681

2023

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Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Quantum oscillation of the tunneling conductance in fully epitaxial double barrier magnetic tunnel junctions

Physical review letters, 2006-01, Vol.96 (2), p.027208-027208, Article 027208

2006

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Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices

Journal of applied physics, 2013-12, Vol.114 (24)

2013

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Phylogenetic analyses of Synechococcus strains (cyanobacteria) using sequences of 16S rDNA and part of the phycocyanin operon reveal multiple evolutionary lines and reflect phycobilin content

International journal of systematic and evolutionary microbiology, 2001-05, Vol.51 (3), p.861-871

2001

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Preparation of Sm−Fe−N Bulk Magnets with High Maximum Energy Products

Journal of the Magnetics Society of Japan, 2020/05/01, Vol.44(3), pp.64-69

2020

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Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve

Nature materials, 2004-06, Vol.3 (6), p.361-364

2004

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Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices

Solid state communications, 2014-07, Vol.190, p.49-52

2014

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Large tunnel magnetoresistance at room temperature with a Co2FeAl full-Heusler alloy electrode

Applied physics letters, 2005-06, Vol.86 (23)

2005

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Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

AIP advances, 2018-05, Vol.8 (5), p.055922-055922-5

2018

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Spin polarization of Co2FeSi full-Heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions

Applied physics letters, 2006-08, Vol.89 (8)

2006

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Perpendicular Magnetic Tunnel Junctions With Low Resistance-Area Product: High Output Voltage and Bias Dependence of Magnetoresistance

IEEE magnetics letters, 2016, Vol.7, p.1-4

2016

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Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

Applied physics letters, 2005-02, Vol.86 (8), p.082501-082501-3

2005

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Heusler alloy/semiconductor hybrid structures

Current opinion in solid state & materials science, 2006-04, Vol.10 (2), p.93-107

2006

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Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy

Applied physics letters, 2009-04, Vol.94 (16)

2009

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Significant magnetoresistance enhancement due to a cotunneling process in a double tunnel junction with single discontinuous ferromagnetic layer insertion

Physical review letters, 2005-02, Vol.94 (6), p.068304.1-068304.4, Article 068304

2005

Volltextzugriff (PDF)

Structural, magnetic, and transport properties of full-Heusler alloy Co2(Cr1−xFex)Al thin films

Journal of applied physics, 2004-12, Vol.96 (11), p.6561-6564

2004

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Tunnel magnetoresistance using full-Heusler alloys

Journal of magnetism and magnetic materials, 2004-11, Vol.282 (1), p.269-274

2004

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Magnetoresistance Effect through GaAs for Fe/MgO/GaAs/MgO/Fe Junctions

Journal of physics. Conference series, 2011-01, Vol.266 (1), p.012109-5

2011

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Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers

Applied physics letters, 2002-07, Vol.81 (2), p.310-312

2002

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Energy barrier and reversal mechanism in Co ∕ Pt multilayer nanodot

Journal of applied physics, 2008, Vol.103 (7), p.07C501-07C501-3

2008

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Size-independent spin switching field using synthetic antiferromagnets

Applied physics letters, 2003-04, Vol.82 (16), p.2667-2669

2003

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Magnetization reversal process and bistability of Co ∕ Pt multilayer dot

Journal of applied physics, 2008, Vol.103 (7), p.07C510-07C510-3

2008

Volltextzugriff (PDF)

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175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

Behavioural interactions between sika deer and Japanese serows: are larger and gregarious ungulates dominant?

Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

Quantum oscillation of the tunneling conductance in fully epitaxial double barrier magnetic tunnel junctions

Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices

Phylogenetic analyses of Synechococcus strains (cyanobacteria) using sequences of 16S rDNA and part of the phycocyanin operon reveal multiple evolutionary lines and reflect phycobilin content

Preparation of Sm−Fe−N Bulk Magnets with High Maximum Energy Products

Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve

Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices

Large tunnel magnetoresistance at room temperature with a Co2FeAl full-Heusler alloy electrode

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

Spin polarization of Co2FeSi full-Heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions

Perpendicular Magnetic Tunnel Junctions With Low Resistance-Area Product: High Output Voltage and Bias Dependence of Magnetoresistance

Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

Heusler alloy/semiconductor hybrid structures

Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy

Significant magnetoresistance enhancement due to a cotunneling process in a double tunnel junction with single discontinuous ferromagnetic layer insertion

Structural, magnetic, and transport properties of full-Heusler alloy Co2(Cr1−xFex)Al thin films

Tunnel magnetoresistance using full-Heusler alloys

Magnetoresistance Effect through GaAs for Fe/MgO/GaAs/MgO/Fe Junctions

Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers

Energy barrier and reversal mechanism in Co ∕ Pt multilayer nanodot

Size-independent spin switching field using synthetic antiferromagnets

Magnetization reversal process and bistability of Co ∕ Pt multilayer dot

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