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Simulation of initial stage of silicon cluster formation during post-annealing of memristive structures based on silicon oxide films subjected to Si+ implantation

Materials letters, 2022-03, Vol.310, p.131494, Article 131494

2022

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Crossover from clean to dirty superconducting limit in YBCO films with modulated disorder

Physica. B, Condensed matter, 2024-04, Vol.679, Article 415764

2024

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Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-04, Vol.537, p.60-64

2023

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Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-04, Vol.537, p.65-70

2023

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Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing

Surface & coatings technology, 2020-03, Vol.386, p.125496, Article 125496

2020

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Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Microelectronic engineering, 2018-02, Vol.187-188, p.134-138

2018

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Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.843

2018

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Biological verification of the long-range effect for silicon light irradiation for planaria

IOP conference series. Earth and environmental science, 2020-01, Vol.433 (1), p.12009

2020

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Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-05, Vol.326, p.41-44

2014

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Formation of fluorine-containing defects and nanocrystals in Si[O.sub.2] upon implantation with fluorine, silicon, and germanium ions: numerical simulation and photoluminescence spectroscopy

Physics of the solid state, 2015-11, p.2164

2015

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Change of immitance during electroforming and resistive switching in the metal--insulator--metal memristive structures based on Si[O.sub.x]

Technical physics, 2016-05, p.745

2016

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Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

Semiconductors (Woodbury, N.Y.), 2016-02, Vol.50 (2), p.271-275

2016

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Si:Si LEDs with room-temperature dislocation-related luminescence

Semiconductors (Woodbury, N.Y.), 2016-02, Vol.50 (2), p.240-243

2016

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Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic Si[O.sub.x]/Zr[O.sub.2] system containing Si nanoclusters

Semiconductors (Woodbury, N.Y.), 2014-01, Vol.48 (1), p.42

2014

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Effect of carbon implantation on visible luminescence and composition of Si-implanted SiO2 layers

Surface & coatings technology, 2009-06, Vol.203 (17-18), p.2658-2663

2009

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Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and Si[O.sub.2]

Semiconductors (Woodbury, N.Y.), 2013-04, Vol.47 (4), p.481

2013

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Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

Physics of the solid state, 2012-02, Vol.54 (2), p.394-403

2012

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Effect of ion doping on the dislocation-related photoluminescence in [Si.sup.+]-implanted silicon

Semiconductors (Woodbury, N.Y.), 2014-02, Vol.48 (2), p.199

2014

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Investigation of electronic structure of Si nanocrystals and their interface with host matrix in P-doped SiO 2:Si and Al 2O 3:Si nanocomposites

Thin solid films, 2006, Vol.515 (2), p.591-595

2006

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Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage

Semiconductors (Woodbury, N.Y.), 2012-05, Vol.46 (5), p.622-624

2012

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Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities

Physics of the solid state, 2014-03, Vol.56 (3), p.631-634

2014

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Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructures

Thin solid films, 2006-09, Vol.515 (1), p.333-337

2006

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Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films

Physics of the solid state, 2013-11, Vol.55 (11), p.2361-2367

2013

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Annealing-induced evolution of optical properties of the multilayered nanoperiodic Si[O.sub.x]/Zr[O.sub.2] system containing Si nanoclusters

Semiconductors (Woodbury, N.Y.), 2011-06, Vol.45 (6), p.731

2011

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Investigation of electronic structure of Si nanocrystals and their interface with host matrix in P-doped SiO2:Si and Al2O3:Si nanocomposites

Thin solid films, 2006-10, Vol.515 (2), p.591-595

2006

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Simulation of initial stage of silicon cluster formation during post-annealing of memristive structures based on silicon oxide films subjected to Si+ implantation

Crossover from clean to dirty superconducting limit in YBCO films with modulated disorder

Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation

Biological verification of the long-range effect for silicon light irradiation for planaria

Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures

Formation of fluorine-containing defects and nanocrystals in Si[O.sub.2] upon implantation with fluorine, silicon, and germanium ions: numerical simulation and photoluminescence spectroscopy

Change of immitance during electroforming and resistive switching in the metal--insulator--metal memristive structures based on Si[O.sub.x]

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

Si:Si LEDs with room-temperature dislocation-related luminescence

Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic Si[O.sub.x]/Zr[O.sub.2] system containing Si nanoclusters

Effect of carbon implantation on visible luminescence and composition of Si-implanted SiO2 layers

Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and Si[O.sub.2]

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

Effect of ion doping on the dislocation-related photoluminescence in [Si.sup.+]-implanted silicon

Investigation of electronic structure of Si nanocrystals and their interface with host matrix in P-doped SiO 2:Si and Al 2O 3:Si nanocomposites

Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage

Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities

Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructures

Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films

Annealing-induced evolution of optical properties of the multilayered nanoperiodic Si[O.sub.x]/Zr[O.sub.2] system containing Si nanoclusters

Investigation of electronic structure of Si nanocrystals and their interface with host matrix in P-doped SiO2:Si and Al2O3:Si nanocomposites

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