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Required Conditions for Photon-Counting Image Sensors

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2199-2205

Teranishi, N.

2012

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Special Issue on Solid-State Image Sensors

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2376-2379

2009

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Infrared focal plane array incorporating silicon IC process compatible bolometer

IEEE transactions on electron devices, 1996-11, Vol.43 (11), p.1844-1850

1996

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Foreword special issue on solid-state image sensors

IEEE transactions on electron devices, 2003-01, Vol.50 (1), p.1-3

2003

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Thermionic-emission-based barrier height analysis for precise estimation of charge handling capacity in CCD registers

IEEE transactions on electron devices, 1997-10, Vol.44 (10), p.1588-1592

1997

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Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors

IEEE transactions on electron devices, 2000-08, Vol.47 (8), p.1566-1572

2000

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Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors

IEEE transactions on electron devices, 2000-09, Vol.47 (9), p.1700-1706

2000

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Impedance of vapor feed direct methanol fuel cells—polarization dependence of elementary processes at the anode

Electrochimica acta, 2004-05, Vol.49 (13), p.2123-2129

2004

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A 30 frames/s 2/3-in 1.3 M-pixel progressive scan IT-CCD image sensor

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.1922-1928, Article 1922

2001

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A 1/2-in 1.3 M-pixel progressive-scan IT-CCD for digital still camera applications

IEEE transactions on electron devices, 2001-02, Vol.48 (2), p.222-230

2001

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Smear reduction in the interline CCD image sensor

IEEE transactions on electron devices, 1987-05, Vol.34 (5), p.1052-1056

1987

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Driving voltage reduction in a two-phase CCD by suppression of potential pockets in inter-electrode gaps

IEEE transactions on electron devices, 1997-10, Vol.44 (10), p.1580-1587

1997

Volltextzugriff (PDF)

Stacked image sensor using chlorine-doped crystalline selenium photoconversion layer composed of size-controlled polycrystalline particles

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.30.7.1-30.7.4

2015

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Photo response analysis in CCD image sensors with a VOD structure

IEEE transactions on electron devices, 1995-04, Vol.42 (4), p.652-655

1995

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Influence of Fermi-level pinning on barrier height inhomogeneity in PtSi/p-Si Schottky contacts

Journal of applied physics, 1991-01, Vol.69 (2), p.850-853

1991

Volltextzugriff (PDF)

Optical limitations to cell size reduction in IT-CCD image sensors

IEEE transactions on electron devices, 1997-10, Vol.44 (10), p.1599-1603

1997

Volltextzugriff (PDF)

Studies on estimation of the age by human epidermis

Nihon hoigaku zasshi = The Japanese journal of legal medicine, 1988-06, Vol.42 (3), p.263

Teranishi, N

1988

Volltextzugriff (PDF)

An infrared-bi-color Schottky-barrier CCD image sensor for precise thermal images

IEEE transactions on electron devices, 1996-02, Vol.43 (2), p.282-286

1996

Volltextzugriff (PDF)

Dark current and white blemish in image sensors

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2013, p.1-4

Teranishi, N.

2013

Volltextzugriff (PDF)

Partition noise in CCD signal detection

IEEE transactions on electron devices, 1986-11, Vol.33 (11), p.1696-1701

1986

Volltextzugriff (PDF)

A 1/4-inch 380 k pixel IT-CCD image sensor employing gate-assisted punchthrough read-out mode

IEEE transactions on electron devices, 1995-10, Vol.42 (10), p.1783-1788

1995

Volltextzugriff (PDF)

A new concept silicon homojunction infrared sensor

IEEE transactions on electron devices, 1991-05, Vol.38 (5), p.1136-1140

1991

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New low-noise output amplifier for high-definition CCD image sensor

IEEE transactions on electron devices, 1991-05, Vol.38 (5), p.1048-1051

1991

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A high fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor using new wiring technology

IEEE transactions on electron devices, 1995-08, Vol.42 (8), p.1433-1440

1995

Volltextzugriff (PDF)

A 1-inch 2-M pixel HDTV CCD image sensor with tungsten photo-shield and H-CCD shunt wiring

IEEE transactions on electron devices, 1995-01, Vol.42 (1), p.50-57

1995

Volltextzugriff (PDF)

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Required Conditions for Photon-Counting Image Sensors

Special Issue on Solid-State Image Sensors

Infrared focal plane array incorporating silicon IC process compatible bolometer

Foreword special issue on solid-state image sensors

Thermionic-emission-based barrier height analysis for precise estimation of charge handling capacity in CCD registers

Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors

Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors

Impedance of vapor feed direct methanol fuel cells—polarization dependence of elementary processes at the anode

A 30 frames/s 2/3-in 1.3 M-pixel progressive scan IT-CCD image sensor

A 1/2-in 1.3 M-pixel progressive-scan IT-CCD for digital still camera applications

Smear reduction in the interline CCD image sensor

Driving voltage reduction in a two-phase CCD by suppression of potential pockets in inter-electrode gaps

Stacked image sensor using chlorine-doped crystalline selenium photoconversion layer composed of size-controlled polycrystalline particles

Photo response analysis in CCD image sensors with a VOD structure

Influence of Fermi-level pinning on barrier height inhomogeneity in PtSi/p-Si Schottky contacts

Optical limitations to cell size reduction in IT-CCD image sensors

Studies on estimation of the age by human epidermis

An infrared-bi-color Schottky-barrier CCD image sensor for precise thermal images

Dark current and white blemish in image sensors

Partition noise in CCD signal detection

A 1/4-inch 380 k pixel IT-CCD image sensor employing gate-assisted punchthrough read-out mode

A new concept silicon homojunction infrared sensor

New low-noise output amplifier for high-definition CCD image sensor

A high fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor using new wiring technology

A 1-inch 2-M pixel HDTV CCD image sensor with tungsten photo-shield and H-CCD shunt wiring

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