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Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

Applied physics express, 2009-07, Vol.2, p.71004

2009

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Detection of local vibrational modes induced by intrinsic defects in undoped BaSi2 light absorber layers using Raman spectroscopy

Journal of applied physics, 2018-07, Vol.124 (2)

2018

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Eu luminescence center created by Mg codoping in Eu-doped GaN

Applied physics letters, 2012-04, Vol.100 (17), p.171904-171904-3

2012

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Identification of Vibrational Modes in BaSi2 Epitaxial Films by Infrared and Raman Spectroscopy

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2018-09, Vol.386, p.43-47

2018

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Probing the Mg2Si/Si(111) heterojunction for photovoltaic applications

Solar energy, 2020-11, Vol.211, p.383-395

2020

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Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy

AIP advances, 2018-10, Vol.8 (10), p.105028-105028-9

2018

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Growth of Ru2Si3 Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2018-09, Vol.386, p.33-37

2018

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Preface to Special Issues on Recent Progress on Optical Functional Semiconductors Based on Group 14 Elements

Rēzā kenkyū, 2022, Vol.50 (10), p.558

TERAI, Yoshikazu

2022

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Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy

Applied physics letters, 2013-04, Vol.102 (14)

2013

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Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition

Journal of non-crystalline solids, 2012-09, Vol.358 (17), p.2443-2445

2012

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Hybrid Mesoporous-Silica Materials Functionalized by PtII Complexes: Correlation between the Spatial Distribution of the Active Center, Photoluminescence Emission, and Photocatalytic Activity

Chemistry : a European journal, 2012-09, Vol.18 (36), p.11371-11378

2012

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Sputtering-assisted metal-organic chemical vapor deposition of Yb-doped ZnO for photonic conversion in Si solar cells

Physica status solidi. C, 2014-07, Vol.11 (7-8), p.1292-1295

2014

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Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE

Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1397-1399

2010

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Characterization of surface electric field in β-FeSi2 by Franz–Keldysh oscillations

Journal of applied physics, 2024-05, Vol.135 (20)

2024

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Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy

Physica status solidi. A, Applications and materials science, 2011-02, Vol.208 (2), p.445-448

2011

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Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy

Journal of crystal growth, 2010-07, Vol.312 (14), p.2056-2059

2010

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Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JM03-08JM03-5

2013

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Growth of Ru-doped β-FeSi 2 polycrystalline thin films by RF magnetron sputtering

Japanese Journal of Applied Physics, 2023-05, Vol.62 (SD), p.SD1006

2023

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Growth of Ru-doped β-FeSi2 polycrystalline thin films by RF magnetron sputtering

Japanese Journal of Applied Physics, 2023-05, Vol.62 (SD), p.SD1006

2023

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Formation of Eu3+ Luminescent Centers in Eu-Doped ZnO Grown by Sputtering-Assisted Metalorganic Chemical Vapor Deposition

Jpn J Appl Phys, 2013-11, Vol.52 (11), p.111101-111101-5

2013

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Structural and piezoelectric properties of AlN thin films grown by pressure gradient sputtering

Japanese Journal of Applied Physics, 2023-01, Vol.62 (SA), p.SA1003

2023

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Enhanced Valley Splitting of Exciton Emission in Colloidal PbSe Quantum Dots When the Interdot Distance Coincides with Onset of Förster Resonance Energy Transfer

The journal of physical chemistry letters, 2021-04, Vol.12 (12), p.3120-3126

2021

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Anisotropic spin dynamics of confined electrons in CdTe/ZnTe quantum structures

Physical review. B, Condensed matter and materials physics, 2010-03, Vol.81 (12), Article 125313

2010

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Enhanced Valley Splitting of Exciton Emission in Colloidal PbSe Quantum Dots When the Interdot Distance Coincides with Onset of Förster Resonance Energy Transfer

The journal of physical chemistry letters, 2021-04, Vol.12 (12), p.3120-3126

2021

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Investigation of Raman depolarization ratio in topological insulator Bi 2 Se 3 epitaxial films

Japanese Journal of Applied Physics, 2023-05, Vol.62 (SD), p.SD1016

2023

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Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

Detection of local vibrational modes induced by intrinsic defects in undoped BaSi2 light absorber layers using Raman spectroscopy

Eu luminescence center created by Mg codoping in Eu-doped GaN

Identification of Vibrational Modes in BaSi2 Epitaxial Films by Infrared and Raman Spectroscopy

Probing the Mg2Si/Si(111) heterojunction for photovoltaic applications

Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy

Growth of Ru2Si3 Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers

Preface to Special Issues on Recent Progress on Optical Functional Semiconductors Based on Group 14 Elements

Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy

Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition

Hybrid Mesoporous-Silica Materials Functionalized by PtII Complexes: Correlation between the Spatial Distribution of the Active Center, Photoluminescence Emission, and Photocatalytic Activity

Sputtering-assisted metal-organic chemical vapor deposition of Yb-doped ZnO for photonic conversion in Si solar cells

Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE

Characterization of surface electric field in β-FeSi2 by Franz–Keldysh oscillations

Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy

Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy

Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate

Growth of Ru-doped β-FeSi 2 polycrystalline thin films by RF magnetron sputtering

Growth of Ru-doped β-FeSi2 polycrystalline thin films by RF magnetron sputtering

Formation of Eu3+ Luminescent Centers in Eu-Doped ZnO Grown by Sputtering-Assisted Metalorganic Chemical Vapor Deposition

Structural and piezoelectric properties of AlN thin films grown by pressure gradient sputtering

Enhanced Valley Splitting of Exciton Emission in Colloidal PbSe Quantum Dots When the Interdot Distance Coincides with Onset of Förster Resonance Energy Transfer

Anisotropic spin dynamics of confined electrons in CdTe/ZnTe quantum structures

Enhanced Valley Splitting of Exciton Emission in Colloidal PbSe Quantum Dots When the Interdot Distance Coincides with Onset of Förster Resonance Energy Transfer

Investigation of Raman depolarization ratio in topological insulator Bi 2 Se 3 epitaxial films

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