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Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Modern electronic materials, 2021, Vol.7 (2), p.63-71

2021

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417P Early experience in using plasma-only multi-omic minimal residual disease testing in early-stage colorectal cancer patients from Asia and the Middle East

Annals of oncology, 2023-11, Vol.34, p.S1626

2023

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Estimating the Crystallographic Structure of AlGaN/GaN Heterostructure Buffer Layers Using Symmetric and Asymmetric X-ray Schemes

Surface investigation, x-ray, synchrotron and neutron techniques, 2019-07, Vol.13 (4), p.578-585

2019

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The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT

Russian microelectronics, 2019-12, Vol.48 (8), p.564-575

2019

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The ALD Films of Al2O3, SiNx, and SiON as Passivation Coatings in AlGaN/GaN HEMT

Russian microelectronics, 2020, Vol.49 (8), p.603-611

2020

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The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs

Russian microelectronics, 2019, Vol.48 (1), p.28-36

2019

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Treatment inferred from mutations identified using massive parallel sequencing leads to clinical benefit in some heavily pretreated cancer patients

Annals of oncology, 2016-10, Vol.27, p.vi26-vi26

2016

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Electrical properties of Si/SiO2/Si structures produced by direct bonding of pre-oxidized silicon wafers

Microelectronic engineering, 2003-04, Vol.66 (1-4), p.522-529

2003

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Creation of a new synthetic medium for culturing Helicobacter pylori

Bulletin of experimental biology and medicine, 2005-05, Vol.139 (5), p.580-584

2005

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Fertility and pregnancy in patients below the age of 35 following chemotherapy for breast cancer

Cancer research (Chicago, Ill.), 2009-01, Vol.69 (2_Supplement), p.6148

2009

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Fertility and pregnancy in patients under age 38 following chemotherapy for breast cancer

Journal of clinical oncology, 2009-05, Vol.27 (15_suppl), p.e11541-e11541

2009

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Raman scattering in a near-surface n-GaAs layer implanted with boron ions

Physics of the solid state, 1999-08, Vol.41 (8), p.1369-1372

1999

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Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures

Russian microelectronics, 2015-12, Vol.44 (8), p.537-545

2015

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Study of heterostructures according to single-crystal X-ray diffractometry

Russian microelectronics, 2013-12, Vol.42 (8), p.517-524

2013

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The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon

Russian microelectronics, 2011-12, Vol.40 (8), p.641-648

2011

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Continuous infusion (CI) of 5-fluorouracil (5-FU) and oral leucovorin (LCV) in the treatment of metastatic breast cancer (MBC)

European journal of cancer (1990), 1999-09, Vol.35, p.S325-S325

1999

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Behavior of oxygen and nitrogen upon simultaneous substoichiometric implantation into silicon

Radiation effects, 1988-08, Vol.107 (1), p.9-13

1988

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ALD Al2O3, SiNx, and SiON films as passivating coatings in AlGaN/GaN HEMT

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2020-01, Vol.22 (3), p.202-211

2020

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Influence of technological factors on the characteristics of ohmic contacts of powerful AlGaN/GaN/SiC HEMT

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2019-10, Vol.21 (3), p.182-193

2019

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Heterostructure Investigation Using X–ray Single–Crystal Diffractometry Method

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2015-03 (3), p.72

2015

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INFLUENCE OF SILICON LAYER PROPERTIES ON CAPACITANCE PARAMETERS OF MIS/SOS-STRUCTURES

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2015-03 (1), p.53

2015

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Electrical properties of Si/SiO2/Si structures produced by direct bonding of pre-oxidized silicon wafers

Microelectronic engineering, 2003, Vol.66 (1-4), p.522-529

2003

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Obtaining hyperimmune anti-coli (anti-Escherichia) human plasma

Biomedicine / [publiee pour l'A.A.I.C.I.G.], 1977-10, Vol.27 (7), p.258

1977

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Prospects for designing immunoglobulins to prevent and treat purulent-inflammatory diseases

Vestnik Rossiĭskoĭ akademii medits︠i︡nskih nauk, 1996 (8), p.26

1996

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Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

417P Early experience in using plasma-only multi-omic minimal residual disease testing in early-stage colorectal cancer patients from Asia and the Middle East

Estimating the Crystallographic Structure of AlGaN/GaN Heterostructure Buffer Layers Using Symmetric and Asymmetric X-ray Schemes

The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT

The ALD Films of Al2O3, SiNx, and SiON as Passivation Coatings in AlGaN/GaN HEMT

The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs

Liquid biopsy reveals collateral tissue damage in cancer

Treatment inferred from mutations identified using massive parallel sequencing leads to clinical benefit in some heavily pretreated cancer patients

Electrical properties of Si/SiO2/Si structures produced by direct bonding of pre-oxidized silicon wafers

Creation of a new synthetic medium for culturing Helicobacter pylori

Fertility and pregnancy in patients below the age of 35 following chemotherapy for breast cancer

Fertility and pregnancy in patients under age 38 following chemotherapy for breast cancer

Raman scattering in a near-surface n-GaAs layer implanted with boron ions

Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures

Study of heterostructures according to single-crystal X-ray diffractometry

The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon

Continuous infusion (CI) of 5-fluorouracil (5-FU) and oral leucovorin (LCV) in the treatment of metastatic breast cancer (MBC)

Behavior of oxygen and nitrogen upon simultaneous substoichiometric implantation into silicon

ALD Al2O3, SiNx, and SiON films as passivating coatings in AlGaN/GaN HEMT

Influence of technological factors on the characteristics of ohmic contacts of powerful AlGaN/GaN/SiC HEMT

Heterostructure Investigation Using X–ray Single–Crystal Diffractometry Method

INFLUENCE OF SILICON LAYER PROPERTIES ON CAPACITANCE PARAMETERS OF MIS/SOS-STRUCTURES

Electrical properties of Si/SiO2/Si structures produced by direct bonding of pre-oxidized silicon wafers

Obtaining hyperimmune anti-coli (anti-Escherichia) human plasma

Prospects for designing immunoglobulins to prevent and treat purulent-inflammatory diseases

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