UB Paderborn / Katalog / Suche / in CDI

Identification of Electron Donor States in N-Doped Carbon Nanotubes

Nano letters, 2001-09, Vol.1 (9), p.457-460

2001

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Modeling and Analysis of Parasitic Resistance in Double-Gate FinFETs

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2291-2296

2009

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Strain-induced electronic property heterogeneity of a carbon nanotube

Physical review. B, Condensed matter, 2001-07, Vol.64 (3), Article 035419

2001

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Electronic structure of kinked multiwalled carbon nanotubes

Applied physics letters, 2000-06, Vol.76 (24), p.3594-3596

2000

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Substrate-interface interactions between carbon nanotubes and the supporting substrate

Physical review. B, Condensed matter, 2002-07, Vol.66 (3), Article 033408

2002

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Transistor mismatch in 32 nm high-k metal-gate process

Electronics letters, 2010-05, Vol.46 (10), p.708-709

2010

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SiGe-Channel Confinement Effects for Short-Channel PFETs With Nonbandedge Gate Workfunctions

IEEE electron device letters, 2007-08, Vol.28 (8), p.719-721

2007

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Modeling and analysis of parasitic resistance in double gate FinFETs

2008 IEEE International SOI Conference, 2008, p.51-52

2008

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Transistor Mismatch Properties in Deep-Submicrometer CMOS Technologies

IEEE transactions on electron devices, 2011-02, Vol.58 (2), p.335-342

2011

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Complex nano-assemblies of polymers and carbon nanotubes

Nanotechnology, 2001-09, Vol.12 (3), p.187-190

2001

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Anomalous Periodic Structure of Polypropylene Chains Observed with Scanning Tunneling Microscopy

Langmuir, 2000-04, Vol.16 (8), p.3574-3577

2000

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Strained SiGe Channels for Band-Edge PMOS Threshold Voltages With Metal Gates and High- k Dielectrics

IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.898-904

2010

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A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process

2008 Symposium on VLSI Technology, 2008, p.88-89

2008

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Heart surgery by the locals in resource-limited settings: The experience from EthiopiaCentral MessagePerspective

JTCVS open, 2022-03, Vol.9, p.98-105

2022

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Transistor mismatch in 32 nm high-k metal-gate process

Electronics letters, 2010-05, Vol.46 (10), p.1-1

2010

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Optimization of Annealing Process of Pulsed RF Decoupled Plasma Nitridation Oxynitrides

Japanese Journal of Applied Physics, 2005-01, Vol.44 (4L), p.L584

2005

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Study of undoped channel FinFETs in active rail clamp ESD networks

2008 IEEE International Reliability Physics Symposium, 2008, p.262-269

2008

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Modeling and Simulation of Poly-Space Effects in Uniaxially-Strained Etch Stop Layer Stressors

2007 IEEE International SOI Conference, 2007, p.25-26

2007

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Stress Sensitivity of PMOSFET Under High Mechanical Stress

2006 International Conference on Simulation of Semiconductor Processes and Devices, 2006, p.119-122

2006

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An Embedded Silicon-Carbon S/D Stressor CMOS Integration on SOI with Enhanced Carbon Incorporation by Laser Spike Annealing

2007 IEEE International SOI Conference, 2007, p.17-18

2007

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Multi-Layer Model for Stressor Film Deposition

2006 International Conference on Simulation of Semiconductor Processes and Devices, 2006, p.123-126

2006

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Optimization of Dual-ESL Stressor Geometry Effects for High Performance 65nm SOI Transistors

2006 IEEE international SOI Conferencee Proceedings, 2006, p.19-20

2006

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Inelastic Deformations in Multi-Walled Carbon Nanotubes

MRS proceedings, 1999, Vol.593, Article 155

1999

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Modeling early failure in integrated circuit interconnect

Microelectronics and reliability, 2000-06, Vol.40 (6), p.991-996

2000

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BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments

IEEE transactions on device and materials reliability, 2005-03, Vol.5 (1), p.26-35

2005

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Identification of Electron Donor States in N-Doped Carbon Nanotubes

Modeling and Analysis of Parasitic Resistance in Double-Gate FinFETs

Strain-induced electronic property heterogeneity of a carbon nanotube

Electronic structure of kinked multiwalled carbon nanotubes

Substrate-interface interactions between carbon nanotubes and the supporting substrate

Transistor mismatch in 32 nm high-k metal-gate process

SiGe-Channel Confinement Effects for Short-Channel PFETs With Nonbandedge Gate Workfunctions

Modeling and analysis of parasitic resistance in double gate FinFETs

Transistor Mismatch Properties in Deep-Submicrometer CMOS Technologies

Complex nano-assemblies of polymers and carbon nanotubes

Anomalous Periodic Structure of Polypropylene Chains Observed with Scanning Tunneling Microscopy

Strained SiGe Channels for Band-Edge PMOS Threshold Voltages With Metal Gates and High- k Dielectrics

A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process

Heart surgery by the locals in resource-limited settings: The experience from EthiopiaCentral MessagePerspective

Transistor mismatch in 32 nm high-k metal-gate process

Optimization of Annealing Process of Pulsed RF Decoupled Plasma Nitridation Oxynitrides

Study of undoped channel FinFETs in active rail clamp ESD networks

Modeling and Simulation of Poly-Space Effects in Uniaxially-Strained Etch Stop Layer Stressors

Stress Sensitivity of PMOSFET Under High Mechanical Stress

An Embedded Silicon-Carbon S/D Stressor CMOS Integration on SOI with Enhanced Carbon Incorporation by Laser Spike Annealing

Multi-Layer Model for Stressor Film Deposition

Optimization of Dual-ESL Stressor Geometry Effects for High Performance 65nm SOI Transistors

Inelastic Deformations in Multi-Walled Carbon Nanotubes

Modeling early failure in integrated circuit interconnect

BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments

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