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Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes

Applied physics. A, Materials science & processing, 2008-03, Vol.90 (4), p.591-596

2008

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Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results

IEEE journal of photovoltaics, 2017-01, Vol.7 (1), p.97-103

2017

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Crystal Growth Behaviors of Silicon during Melt Growth Processes

International Journal of Photoenergy, 2012-01, Vol.2012 (2012), p.148-163-018

2012

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Photovoltaic Materials and Devices

International journal of photoenergy, 2012-01, Vol.2012 (2012), p.1-1

2012

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A nucleation-growth model of nanowires produced by the vapor-liquid-solid process

Journal of applied physics, 2013-08, Vol.114 (6)

2013

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Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process?

Applied physics letters, 2003-08, Vol.83 (6), p.1199-1201

2003

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Co-precipitation of carbon and oxygen in silicon : the dominant flux criterion

Japanese Journal of Applied Physics, 1993-11, Vol.32 (11A), p.4857-4862

1993

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Crystallization of Amorphous SiO2 Microtubes Catalyzed by Lithium

Advanced functional materials, 2007-08, Vol.17 (12), p.1952-1957

2007

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A Systematic Review of User Mental Models on Applications Sustainability

International Journal of Sustainable Construction Engineering and Technology, 2023-01, Vol.14 (3)

2023

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Chemical Tension in VLS Nanostructure Growth Process: From Nanohillocks to Nanowires

MRS proceedings, 2007, Vol.1017, Article 1017-DD04-09

2007

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Simulation of the transient indiffusion-segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices

Journal of applied physics, 1993-08, Vol.74 (4), p.2461-2470

1993

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A model of Si diffusion in GaAs based on the effect of the Fermi level

Journal of applied physics, 1989-10, Vol.66 (7), p.2952-2961

1989

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Predominance of Alternate Diffusion Mechanisms for the Interstitial-Substitutional Impurity Gold in Silicon

MRS proceedings, 2007, Vol.994, Article 0994-F02-05

2007

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Minority Carrier Diffusion Length Improvement in Czochralski Silicon by Aluminum Gettering

MRS proceedings, 1995, Vol.378, p.279-284, Article 279

1995

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Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si

Solar energy materials and solar cells, 2001-12, Vol.70 (2), p.231-238

2001

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Thermodynamics of carbon in iron nanoparticles at low temperature: Reduced solubility and size-induced nucleation of cementite

Physics procedia, 2010, Vol.6, p.16-26

2010

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A Quantitative Model of the Electrical Activity of Metal Silicide Precipitates in Silicon Based on the Schottky Effect

MRS proceedings, 2001, Vol.669, Article J6.11

2001

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Notice of Removal: Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017, p.1-3

2017

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Improvement of minority carrier diffusion length in Si by Al gettering

Journal of applied physics, 1995-04, Vol.77 (8), p.3858-3863

1995

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The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon

Journal of applied physics, 1989-06, Vol.65 (11), p.4215-4219

1989

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Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation

Physical review letters, 1979-01, Vol.42 (20), p.1356-1358

1979

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Point defects and diffusion mechanisms pertinent to the Ga sublattice of GaAs

Materials Chemistry and Physics, 1995-05, Vol.40 (4), p.245-252

Tan, Teh Y.

1995

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Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs

Applied physics letters, 1995-11, Vol.67 (19), p.2863-2865

1995

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Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs

Journal of applied physics, 1999-11, Vol.86 (10), p.5376-5384

1999

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Fermi-Level effect and junction carrier concentration effect on p-Type dopant distribution in IlI-V Compound superlattices

MRS proceedings, 1998, Vol.535, Article 219

1998

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Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes

Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results

Crystal Growth Behaviors of Silicon during Melt Growth Processes

Photovoltaic Materials and Devices

A nucleation-growth model of nanowires produced by the vapor-liquid-solid process

Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process?

Co-precipitation of carbon and oxygen in silicon : the dominant flux criterion

Crystallization of Amorphous SiO2 Microtubes Catalyzed by Lithium

A Systematic Review of User Mental Models on Applications Sustainability

Chemical Tension in VLS Nanostructure Growth Process: From Nanohillocks to Nanowires

Simulation of the transient indiffusion-segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices

A model of Si diffusion in GaAs based on the effect of the Fermi level

Predominance of Alternate Diffusion Mechanisms for the Interstitial-Substitutional Impurity Gold in Silicon

Minority Carrier Diffusion Length Improvement in Czochralski Silicon by Aluminum Gettering

Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si

Thermodynamics of carbon in iron nanoparticles at low temperature: Reduced solubility and size-induced nucleation of cementite

A Quantitative Model of the Electrical Activity of Metal Silicide Precipitates in Silicon Based on the Schottky Effect

Notice of Removal: Dissolution of oxygen precipitate nuclei in N-type CZ Si wafers to improve their material quality: Experimental results

Improvement of minority carrier diffusion length in Si by Al gettering

The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon

Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation

Point defects and diffusion mechanisms pertinent to the Ga sublattice of GaAs

Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs

Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs

Fermi-Level effect and junction carrier concentration effect on p-Type dopant distribution in IlI-V Compound superlattices

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