UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 987

Sortiert nach

Impact of stroke‐associated pneumonia on mortality, length of hospitalization, and functional outcome

Acta neurologica Scandinavica, 2018-10, Vol.138 (4), p.293-300

2018

Link zum Volltext

Verfügbarkeit prüfen

Effect of low numerical-aperture femtosecond two-photon absorption on (SU-8) resist for ultrahigh-aspect-ratio microstereolithography

Journal of applied physics, 2005-03, Vol.97 (5)

2005

Link zum Volltext

Verfügbarkeit prüfen

Multi-strata subsurface laser die singulation to enable defect-free ultra-thin stacked memory dies

AIP advances, 2015-05, Vol.5 (5), p.057128-057128-7

2015

Link zum Volltext

Verfügbarkeit prüfen

SU-8 for real three-dimensional subdiffraction-limit two-photon microfabrication

Applied physics letters, 2004-05, Vol.84 (20), p.4095-4097

2004

Link zum Volltext

Verfügbarkeit prüfen

Cross-linked PMMA as a low-dimensional dielectric sacrificial layer

Journal of microelectromechanical systems, 2003-10, Vol.12 (5), p.641-648

2003

Link zum Volltext
IEEE_Xplore

Etching control of benzocyclobutene in CF4/O2 and SF6/O2 plasmas with thick photoresist and titanium masks

Thin solid films, 2006-05, Vol.504 (1-2), p.252-256

2006

Link zum Volltext

Verfügbarkeit prüfen

300-mm Production-Worthy Magnetically Enhanced Non-Bosch Through-Si-Via Etch for 3-D Logic Integration

IEEE transactions on semiconductor manufacturing, 2010-05, Vol.23 (2), p.293-302

2010

Link zum Volltext
IEEE_Xplore

Near-zero curvature fabrication of miniaturized micromechanical Ni switches using electron beam cross-linked PMMA

Journal of micromechanics and microengineering, 2003-09, Vol.13 (5), p.591-598

2003

Link zum Volltext

Verfügbarkeit prüfen

Investigation into performance of TaN diffusion barrier against copper diffusion using XRD

Electronics letters, 2000-12, Vol.36 (25), p.2105-2106

Teh, W.H.

2000

Link zum Volltext

Verfügbarkeit prüfen

Evaluation of the performance of TaN diffusion barrier against copper diffusion using SIMS and AFM

Electronics letters, 2001-05, Vol.37 (10), p.660-661

2001

Link zum Volltext

Verfügbarkeit prüfen

200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers

Applied physics letters, 2005-08, Vol.87 (7)

2005

Link zum Volltext

Verfügbarkeit prüfen

200-mm wafer-scale transfer of 0.18-μm dual-damascene Cu/SiO2 interconnection system to plastic substrates

IEEE electron device letters, 2005-11, Vol.26 (11), p.802-804

2005

Link zum Volltext
IEEE_Xplore

200 mm wafer-scale substrate transfer of 0.13 μ m Cu ∕ low- k (Black Diamond™) dual-damascene interconnection to glass substrates

Applied physics letters, 2005-07, Vol.87 (4), p.043103-043103-3

2005

Link zum Volltext

Verfügbarkeit prüfen

Characteristics of a micromachined floating-gate high-electron-mobility transistor at 4.2 K

Journal of applied physics, 2005-06, Vol.97 (11), p.114507-114507-17

2005

Link zum Volltext

Verfügbarkeit prüfen

Reversible electrostatic control of micromechanical structure tunneling characteristics

Journal of applied physics, 2003-10, Vol.94 (7), p.4614-4618

2003

Link zum Volltext

Verfügbarkeit prüfen

Study of microstructure and resistivity evolution for electroplated copper films at near-room temperature

Microelectronics, 2001-07, Vol.32 (7), p.579-585

2001

Link zum Volltext

Verfügbarkeit prüfen

Switching characteristics of electrostatically actuated miniaturized micromechanical metallic cantilevers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-11, Vol.21 (6), p.2360-2367

2003

Link zum Volltext

Verfügbarkeit prüfen

Fabrication of quasi-three-dimensional micro/nanomechanical components using electron beam cross-linked poly (methyl methacrylate) resist

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-11, Vol.21 (6), p.3007-3011

2003

Link zum Volltext

Verfügbarkeit prüfen

Erratum: “Reversible electrostatic control of micromechanical structure tunneling characteristics” [J. Appl. Phys. 94 , 4614 (2003)]

Journal of applied physics, 2004-04, Vol.95 (8), p.4509-4509

2004

Link zum Volltext

Verfügbarkeit prüfen

200 mm wafer-scale substrate transfer of 0.13μmCu∕low-k (Black Diamond™) dual-damascene interconnection to glass substrates

Applied physics letters, 2005-07, Vol.87 (4)

2005

Link zum Volltext

Verfügbarkeit prüfen

Corrections to "200-mm Wafer Scale Transfer of 0.18mum Dual-Damascene Cu/SiO_2Interconnection System to Plastic Substrates"

IEEE electron device letters, 2006-03, Vol.27 (3), p.198-198

2006

Link zum Volltext

Verfügbarkeit prüfen

Investigation into performance of TaN diffusion barrier against copper diffusion using XRD

Electronics letters, 2000-12, Vol.36 (25), p.1-1

Teh, W H

2000

Link zum Volltext

Verfügbarkeit prüfen

200-mm wafer-scale transfer of 0.18-mum dual-damascene Cu/SiO/sub 2/ interconnection system to plastic substrates

IEEE electron device letters, 2005-11, Vol.26 (11), p.802-804

2005

Link zum Volltext

Verfügbarkeit prüfen

Post-bond sub-500 nm alignment in 300 mm integrated face-to-face wafer-to-wafer Cu-Cu thermocompression, Si-Si fusion and oxideoxide fusion bonding

2010 IEEE International 3D Systems Integration Conference (3DIC), 2010, p.1-6

2010

Link zum Volltext
IEEE_Xplore

200-mm wafer-scale transfer of 0.18- mu m dual-damascene Cu/SiO sub(2) interconnection system to plastic substrates

IEEE electron device letters, 2005-01, Vol.26 (11)

2005

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 987

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(875)
Mit Volltextzugriff
(872)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Impact of stroke‐associated pneumonia on mortality, length of hospitalization, and functional outcome

Effect of low numerical-aperture femtosecond two-photon absorption on (SU-8) resist for ultrahigh-aspect-ratio microstereolithography

Multi-strata subsurface laser die singulation to enable defect-free ultra-thin stacked memory dies

SU-8 for real three-dimensional subdiffraction-limit two-photon microfabrication

Cross-linked PMMA as a low-dimensional dielectric sacrificial layer

Etching control of benzocyclobutene in CF4/O2 and SF6/O2 plasmas with thick photoresist and titanium masks

300-mm Production-Worthy Magnetically Enhanced Non-Bosch Through-Si-Via Etch for 3-D Logic Integration

Near-zero curvature fabrication of miniaturized micromechanical Ni switches using electron beam cross-linked PMMA

Investigation into performance of TaN diffusion barrier against copper diffusion using XRD

Evaluation of the performance of TaN diffusion barrier against copper diffusion using SIMS and AFM

200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers

200-mm wafer-scale transfer of 0.18-μm dual-damascene Cu/SiO2 interconnection system to plastic substrates

200 mm wafer-scale substrate transfer of 0.13 μ m Cu ∕ low- k (Black Diamond™) dual-damascene interconnection to glass substrates

Characteristics of a micromachined floating-gate high-electron-mobility transistor at 4.2 K

Reversible electrostatic control of micromechanical structure tunneling characteristics

Study of microstructure and resistivity evolution for electroplated copper films at near-room temperature

Switching characteristics of electrostatically actuated miniaturized micromechanical metallic cantilevers

Fabrication of quasi-three-dimensional micro/nanomechanical components using electron beam cross-linked poly (methyl methacrylate) resist

Erratum: “Reversible electrostatic control of micromechanical structure tunneling characteristics” [J. Appl. Phys. 94 , 4614 (2003)]

200 mm wafer-scale substrate transfer of 0.13μmCu∕low-k (Black Diamond™) dual-damascene interconnection to glass substrates

Corrections to "200-mm Wafer Scale Transfer of 0.18mum Dual-Damascene Cu/SiO_2Interconnection System to Plastic Substrates"

Investigation into performance of TaN diffusion barrier against copper diffusion using XRD

200-mm wafer-scale transfer of 0.18-mum dual-damascene Cu/SiO/sub 2/ interconnection system to plastic substrates

Post-bond sub-500 nm alignment in 300 mm integrated face-to-face wafer-to-wafer Cu-Cu thermocompression, Si-Si fusion and oxideoxide fusion bonding

200-mm wafer-scale transfer of 0.18- mu m dual-damascene Cu/SiO sub(2) interconnection system to plastic substrates

Suchergebnisse filtern