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Modified Interface State Charge Model for 4H-SiC Power MOSFETs

IEEE electron device letters, 2015-05, Vol.36 (5), p.490-492

2015

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Two-component model for long-term prediction of threshold voltage shifts in SiC MOSFETs under negative bias stress

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DP12-5

2015

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Statistical analysis of relationship between negative-bias temperature instability and random telegraph noise in small p-channel metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, 2014-03, Vol.53 (3), p.34202-1-034202-5

2014

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Comparison of Extremely High-Temperature Characteristics of Planar and Three- Dimensional SiC MOSFETs

IEEE electron device letters, 2019-09, Vol.40 (9), p.1382-1384

2019

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IEEE_Xplore

Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics, 2012-11, Vol.51 (11), p.114001-114001-6

2012

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics, 2012-11, Vol.51 (11R), p.114001

2012

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State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO2 Films in a Metal--Oxide--Silicon Structure

Jpn J Appl Phys, 2013-11, Vol.52 (11), p.110203-110203-4

2013

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Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM

2008 IEEE International Reliability Physics Symposium, 2008, p.541-546

2008

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IEEE_Xplore

Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3439-3444

2016

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IEEE_Xplore

1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)

Materials science forum, 2019-07, Vol.963, p.617-620

2019

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Impact of HK / MG stacks and future device scaling on RTN

2011 International Reliability Physics Symposium, 2011, p.6A.5.1-6A.5.6

2011

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IEEE_Xplore

Reliable 4H-SiC MOSFET with High Threshold Voltage by Al sub(2)O sub(3)-Inserted Gate Insulator

Materials science forum, 2015-06, Vol.821-823, p.725-728

2015

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Reliable 4H-SiC MOSFET with High Threshold Voltage by Al2O3-Inserted Gate Insulator

Materials science forum, 2015-06, Vol.821-823, p.725-728

2015

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Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO 2 films

Japanese Journal of Applied Physics, 2014-08, Vol.53 (8S1), p.8

2014

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Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO2 films

Japanese Journal of Applied Physics, 2014-08, Vol.53 (8S1)

2014

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Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO sub(2) films

Japanese Journal of Applied Physics, 2014-01, Vol.53 (8S1), p.08LB01-1-08LB01-6

2014

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State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO 2 Films in a Metal–Oxide–Silicon Structure

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11R), p.110203

2013

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Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.81-84

2015

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IEEE_Xplore

State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO sub(2) Films in a Metal-Oxide-Silicon Structure

Japanese Journal of Applied Physics, 2013-01, Vol.52 (11R), p.110203-1-110203-4

2013

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Anomalously Large Threshold Voltage Fluctuation by Complex Random Telegraph Signal in Floating Gate Flash Memory

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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IEEE_Xplore

Development of Bus Bar Structure with Low Imbalance in Stray Inductance for Three-phase Silicon Carbide Inverter

2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), 2018, p.1-P.8

2018

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Hysteretic drain-current behavior due to random telegraph noise in Scaled-down FETs with high-κ/metal-gate stacks

2010 International Electron Devices Meeting, 2010, p.28.1.1-28.1.4

2010

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IEEE_Xplore

Transport Characteristics of 6-Mercaptopurine in Brain Microvascular Endothelial Cells Derived From Human Induced Pluripotent Stem Cells

Journal of pharmaceutical sciences, 2021-10, Vol.110 (10), p.3484-3490

2021

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Modified Interface State Charge Model for 4H-SiC Power MOSFETs

Two-component model for long-term prediction of threshold voltage shifts in SiC MOSFETs under negative bias stress

Statistical analysis of relationship between negative-bias temperature instability and random telegraph noise in small p-channel metal-oxide-semiconductor field-effect transistors

Comparison of Extremely High-Temperature Characteristics of Planar and Three- Dimensional SiC MOSFETs

Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO2 Films in a Metal--Oxide--Silicon Structure

Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM

Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)

1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)

Impact of HK / MG stacks and future device scaling on RTN

Reliable 4H-SiC MOSFET with High Threshold Voltage by Al sub(2)O sub(3)-Inserted Gate Insulator

Reliable 4H-SiC MOSFET with High Threshold Voltage by Al2O3-Inserted Gate Insulator

Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO 2 films

Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO2 films

Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO sub(2) films

State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO 2 Films in a Metal–Oxide–Silicon Structure

Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd

State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO sub(2) Films in a Metal-Oxide-Silicon Structure

Anomalously Large Threshold Voltage Fluctuation by Complex Random Telegraph Signal in Floating Gate Flash Memory

Development of Bus Bar Structure with Low Imbalance in Stray Inductance for Three-phase Silicon Carbide Inverter

Hysteretic drain-current behavior due to random telegraph noise in Scaled-down FETs with high-κ/metal-gate stacks

Transport Characteristics of 6-Mercaptopurine in Brain Microvascular Endothelial Cells Derived From Human Induced Pluripotent Stem Cells

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