UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Rare-Earth-Mediated Optomechanical System in the Reversed Dissipation Regime

Physical review letters, 2021-01, Vol.126 (4), p.047404-047404, Article 047404

2021

Volltextzugriff (PDF)

Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature

Science advances, 2019-02, Vol.5 (2), p.eaat8896-eaat8896

2019

Volltextzugriff (PDF)

Epitaxial single-crystal rare-earth oxide in horizontal slot waveguide for silicon-based integrated active photonic devices

Optics express, 2020-05, Vol.28 (10), p.14448-14460

2020

Volltextzugriff (PDF)

Near-field cavity optomechanical coupling in a compound semiconductor nanowire

Communications physics, 2020-12, Vol.3 (1), p.1-9, Article 230

2020

Volltextzugriff (PDF)

Direct modulation of a single InP/InAs nanowire light-emitting diode

Applied physics letters, 2018-06, Vol.112 (25)

2018

Volltextzugriff (PDF)

Low-temperature formation of GeSn nanodots by Sn mediation

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SD), p.SDDG09

2019

Volltextzugriff (PDF)

Structural and optical properties of Zn(Mg,Cd)O alloy films grown by remote-plasma-enhanced MOCVD

Journal of crystal growth, 2010-05, Vol.312 (10), p.1703-1708

2010

Volltextzugriff (PDF)

Energy Transfers between Er3+ Ions Located at the Two Crystalographic Sites of Er2O3 Grown on Si(111)

Jpn J Appl Phys, 2012-02, Vol.51 (2), p.02BG07-02BG07-3

2012

Volltextzugriff (PDF)

Study on the formation mechanism of bismuth-mediated Ge nanodots fabricated by vacuum evaporation

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SD), p.SDDG10

2019

Volltextzugriff (PDF)

Determination of phonon decay rate in p-type silicon under Fano resonance by measurement of coherent phonons

AIP advances, 2015-09, Vol.5 (9), p.097152-097152-6

2015

Volltextzugriff (PDF)

Investigation of Population Dynamics in 1.54-μm Telecom Transitions of Epitaxial (ErxSc1-x)2O3 Thin Layers for Coherent Population Manipulation: Weak Excitation Regime

Applied sciences, 2018-05, Vol.8 (6), p.874

2018

Volltextzugriff (PDF)

Mechanism of concentration quenching in epitaxial (Er_xSc_1-x)_2O_3 thin layers

Optical materials express, 2017-03, Vol.7 (3), p.1097

2017

Volltextzugriff (PDF)

Growth and Characterization of Telecommunication-Wavelength Quantum Dots Using Bi as a Surfactant

Japanese Journal of Applied Physics, 2010-06, Vol.49 (6), p.06GJ01-06GJ01-6

2010

Volltextzugriff (PDF)

Mixture formation of ErxYb2-xSi2O7 and ErxYb2-xO3 on Si for broadening the C-band in an optical amplifier

AIP advances, 2013-04, Vol.3 (4), p.042107-042107

2013

Volltextzugriff (PDF)

Dynamic Control of the Coupling between Dark and Bright Excitons with Vibrational Strain

Physical review letters, 2018-06, Vol.120 (26), p.267401-267401, Article 267401

2018

Volltextzugriff (PDF)

Light emission from thulium silicates and oxides for optical amplifiers on silicon in the extended optical communications band

AIP advances, 2013-07, Vol.3 (7), p.072122-072122

2013

Volltextzugriff (PDF)

Doping-type dependence of phonon dephasing dynamics in Si

Applied physics letters, 2011-04, Vol.98 (14), p.141904-141904-3

2011

Volltextzugriff (PDF)

Single-photon emission from single quantum dots in a hybrid pillar microcavity

Applied physics letters, 2008-02, Vol.92 (8)

2008

Volltextzugriff (PDF)

In Situ Observation of Graphene Growth by Chemical Vapor Deposition Using Ultraviolet Reflection: Implications for Efficient Growth Control in the Industrial Process

ACS applied nano materials, 2023-11, Vol.6 (22), p.21405-21411

2023

Volltextzugriff (PDF)

Low-loss erbium-incorporated rare-earth oxide waveguides on Si with bound states in the continuum and the large optical signal enhancement in them

Optics express, 2021-12, Vol.29 (25), p.41132

2021

Volltextzugriff (PDF)

Observation of Acoustically Induced Dressed States of Rare-Earth Ions

Physical review letters, 2024-01, Vol.132 (3), p.036904-036904, Article 036904

2024

Volltextzugriff (PDF)

Distinctive Feature of Ripening During Growth Interruption of InGaAs Quantum Dot Epitaxy Using Bi as a Surfactant

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6), p.06GH07-06GH07-4

2011

Volltextzugriff (PDF)

Distinctive Feature of Ripening During Growth Interruption of InGaAs Quantum Dot Epitaxy Using Bi as a Surfactant

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6S), p.6

2011

Volltextzugriff (PDF)

Dot-Height Dependence of Photoluminescence from ZnO Quantum Dots

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.3007

2008

Volltextzugriff (PDF)

Optical coherent transients in 167 Er 3+ at telecom-band wavelength

Optics letters, 2019-10, Vol.44 (20), p.4933

2019

Volltextzugriff (PDF)

1 – 25 von 97

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(71)
Mit Volltextzugriff
(76)

Publikationsform

Sprache

Englisch
(90)
Japanisch
(34)

Erscheinungsjahr

n.n

Thema

Science & Technology
(51)
Physical Sciences
(47)
Physics
(40)
Physics, Applied
(36)
Technology
(15)
Materials Science
(14)
Materials Science, Multidisciplinary
(13)
Optics
(13)
Photoluminescence
(12)
General Physics And Astronomy
(10)
Erbium
(8)
Science & Technology - Other Topics
(8)
Silicon
(8)
Nanoscience & Nanotechnology
(7)
Physics And Astronomy
(7)
Exact Sciences And Technology
(6)
General Engineering
(6)
Annealing
(5)
Nanowires
(5)
Optical Properties
(5)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Rare-Earth-Mediated Optomechanical System in the Reversed Dissipation Regime

Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature

Epitaxial single-crystal rare-earth oxide in horizontal slot waveguide for silicon-based integrated active photonic devices

Near-field cavity optomechanical coupling in a compound semiconductor nanowire

Direct modulation of a single InP/InAs nanowire light-emitting diode

Low-temperature formation of GeSn nanodots by Sn mediation

Structural and optical properties of Zn(Mg,Cd)O alloy films grown by remote-plasma-enhanced MOCVD

Energy Transfers between Er3+ Ions Located at the Two Crystalographic Sites of Er2O3 Grown on Si(111)

Study on the formation mechanism of bismuth-mediated Ge nanodots fabricated by vacuum evaporation

Determination of phonon decay rate in p-type silicon under Fano resonance by measurement of coherent phonons

Investigation of Population Dynamics in 1.54-μm Telecom Transitions of Epitaxial (ErxSc1-x)2O3 Thin Layers for Coherent Population Manipulation: Weak Excitation Regime

Mechanism of concentration quenching in epitaxial (Er_xSc_1-x)_2O_3 thin layers

Growth and Characterization of Telecommunication-Wavelength Quantum Dots Using Bi as a Surfactant

Mixture formation of ErxYb2-xSi2O7 and ErxYb2-xO3 on Si for broadening the C-band in an optical amplifier

Dynamic Control of the Coupling between Dark and Bright Excitons with Vibrational Strain

Light emission from thulium silicates and oxides for optical amplifiers on silicon in the extended optical communications band

Doping-type dependence of phonon dephasing dynamics in Si

Single-photon emission from single quantum dots in a hybrid pillar microcavity

In Situ Observation of Graphene Growth by Chemical Vapor Deposition Using Ultraviolet Reflection: Implications for Efficient Growth Control in the Industrial Process

Low-loss erbium-incorporated rare-earth oxide waveguides on Si with bound states in the continuum and the large optical signal enhancement in them

Observation of Acoustically Induced Dressed States of Rare-Earth Ions

Distinctive Feature of Ripening During Growth Interruption of InGaAs Quantum Dot Epitaxy Using Bi as a Surfactant

Distinctive Feature of Ripening During Growth Interruption of InGaAs Quantum Dot Epitaxy Using Bi as a Surfactant

Dot-Height Dependence of Photoluminescence from ZnO Quantum Dots

Optical coherent transients in 167 Er 3+ at telecom-band wavelength

Suchergebnisse filtern