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Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy

Journal of crystal growth, 1999-02, Vol.197 (3), p.507-512

1999

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Metalorganic chemical vapor epitaxy and doping of ZnMgSSe heterostructures for blue emitting devices

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.30-38

1997

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Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.307-311

1996

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The influence of structural defects in ZnSe/GaAs heterostructures on luminescence properties

Journal of physics. D, Applied physics, 1998-10, Vol.31 (19), p.2421-2425

1998

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Nitrogen as carrier gas for the growth of ZnSe and ZnSe:N in plasma enhanced metalorganic vapor phase epitaxy

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.491-496

1997

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Measurements of transient photocapacitance and photocurrent on MOVPE-grown Au/ZnSe/GaAs heterostructures

Journal of crystal growth, 1998, Vol.184, p.199-202

1998

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Electron beam activation of accepters in MOVPE ZnSe:N

Journal of crystal growth, 1998-02, Vol.184-185 (1-2), p.435-439

Taudt, W

1998

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Electrical characterization of doped ZnSe-based heterostructures grown by MOVPE

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.293-297

1996

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Electron beam activation of acceptors in MOVPE ZnSe : N

Journal of crystal growth, 1998-02, Vol.184, p.435-439

1998

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Low temperature growth and plasma enhanced nitrogen doping of ZnSe by metalorganic vapour phase epitaxy

Journal of crystal growth, 1994-04, Vol.138 (1), p.418-424

1994

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Optimization of pre-epitaxial processes to obtain high-quality ZnSe/GaAs heterointerfaces grown in a low-pressure metalorganic vapour-phase epitaxy system

Journal of crystal growth, 1998-08, Vol.191 (4), p.663-672

1998

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Photoluminescence of Nitrogen-Doped ZnSe Layers

physica status solidi (b), 1998-12, Vol.210 (2), p.367-372

1998

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Cathodoluminescence characterization of nitrogen-doped ZnSe

Journal of crystal growth, 1994-12, Vol.145 (1), p.562-569

1994

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Defects in MOVPE grown ZnSe on GaAs studied by deep level transient spectroscopy

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.537-541

1997

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Nitrogen doping of ZnSe with trimethylsilylazide, triallylamine or bisditrimethylsilylamidozinc during metalorganic vapour phase epitaxy

Journal of crystal growth, 1996-11, Vol.169 (2), p.243-249

1996

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Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy system

Journal of crystal growth, 1994-12, Vol.145 (1), p.582-588

1994

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Structure of free exciton luminescence spectra in heteroepitaxial ZnSe/GaAs

Journal of crystal growth, 1998-02, Vol.184, p.1100-1104

1998

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Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

Journal of electronic materials, 1995-11, Vol.24 (11), p.1671-1675

1995

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Time-resolved donor-acceptor pair recombination luminescence in highly n- and p-doped II–VI semiconductors

Journal of crystal growth, 1994-04, Vol.138 (1), p.815-819

1994

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Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy

Journal of crystal growth, 1994-04, Vol.138 (1), p.379-384

1994

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Near-band-edge photoluminescence of MOVPE-grown undoped and nitrogen-doped ZnSe

Journal of crystal growth, 1997-04, Vol.174 (1), p.757-762

1997

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Optical and electrical properties of MOVPE-grown ZnSe:N using triallylamine as a nitrogen precursor

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.533-536

1997

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Optical-pumped lasing of doped ZnSe epilayers grown by MOVPE

Journal of crystal growth, 1997-04, Vol.174 (1), p.763-767

1997

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Optically-Pumped Lasing of Doped ZnSe Epitaxial Layers Grown by Metal-Organic Vapour-Phase Epitaxy

Physica status solidi. A, Applied research, 1997-02, Vol.159 (2), p.543-557

1997

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Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures

Materials science forum, 1995, Vol.182-184, p.171-174

1995

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Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy

Metalorganic chemical vapor epitaxy and doping of ZnMgSSe heterostructures for blue emitting devices

Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE

The influence of structural defects in ZnSe/GaAs heterostructures on luminescence properties

Nitrogen as carrier gas for the growth of ZnSe and ZnSe:N in plasma enhanced metalorganic vapor phase epitaxy

Measurements of transient photocapacitance and photocurrent on MOVPE-grown Au/ZnSe/GaAs heterostructures

Electron beam activation of accepters in MOVPE ZnSe:N

Electrical characterization of doped ZnSe-based heterostructures grown by MOVPE

Electron beam activation of acceptors in MOVPE ZnSe : N

Low temperature growth and plasma enhanced nitrogen doping of ZnSe by metalorganic vapour phase epitaxy

Optimization of pre-epitaxial processes to obtain high-quality ZnSe/GaAs heterointerfaces grown in a low-pressure metalorganic vapour-phase epitaxy system

Photoluminescence of Nitrogen-Doped ZnSe Layers

Cathodoluminescence characterization of nitrogen-doped ZnSe

Defects in MOVPE grown ZnSe on GaAs studied by deep level transient spectroscopy

Nitrogen doping of ZnSe with trimethylsilylazide, triallylamine or bisditrimethylsilylamidozinc during metalorganic vapour phase epitaxy

Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy system

Structure of free exciton luminescence spectra in heteroepitaxial ZnSe/GaAs

Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

Time-resolved donor-acceptor pair recombination luminescence in highly n- and p-doped II–VI semiconductors

Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy

Near-band-edge photoluminescence of MOVPE-grown undoped and nitrogen-doped ZnSe

Optical and electrical properties of MOVPE-grown ZnSe:N using triallylamine as a nitrogen precursor

Optical-pumped lasing of doped ZnSe epilayers grown by MOVPE

Optically-Pumped Lasing of Doped ZnSe Epitaxial Layers Grown by Metal-Organic Vapour-Phase Epitaxy

Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures

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