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Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres

Materials, 2023-06, Vol.16 (12), p.4381

2023

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Electrical properties of isotype and anisotype ZnO/4H-SiC heterojunction diodes

Applied physics letters, 2017-04, Vol.110 (14)

2017

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AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Micromachines (Basel), 2018-10, Vol.9 (11), p.546

2018

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Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET Performance by Reducing Depletion Region Trap Density

IEEE electron device letters, 2015-05, Vol.36 (5), p.469-471

2015

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Optimization of Two‐Zone Step‐Etched Junction Termination Structures for Vertical GaN Power Devices

Physica status solidi. A, Applications and materials science, 2024-04

2024

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Temperature-Dependent Thermal Properties of Supported MoS2 Monolayers

ACS applied materials & interfaces, 2015-03, Vol.7 (9), p.5061-5065

2015

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Thermal Stability of Cu/Pd2Si/, Cu/, and Au/Ni/ Schottky Contacts to AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.490-495

2024

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Thermal Stability of Cu/Pd 2 Si/, Cu/, and Au/Ni/ Schottky Contacts to AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.490-495

2024

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Temperature Evolution of Phonon Properties in Few-Layer Black Phosphorus

Journal of physical chemistry. C, 2016-03, Vol.120 (9), p.5265-5270

2016

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Temperature-Dependent Nonlinear Phonon Shifts in a Supported MoS 2 Monolayer

ACS applied materials & interfaces, 2014-06, Vol.6 (12), p.8959-8963

2014

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High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6255-6259

2022

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All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/ β ‐Ga 2 O 3 Schottky Diodes

Physica status solidi. A, Applications and materials science, 2023-10, Vol.220 (19)

2023

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Carrier Trap Density Reduction at SiO 2 /4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres

Materials, 2023-06, Vol.16 (12)

2023

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Carrier Trap Density Reduction at SiO[sub.2]/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres

Materials, 2023-06, Vol.16 (12)

2023

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Temperature-Dependent Nonlinear Phonon Shifts in a Supported MoS2 Monolayer

ACS applied materials & interfaces, 2014-06, Vol.6 (12), p.8959-8963

2014

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Development of assembly techniques for connection of AlGaN/GaN/Si chips to DBC substrate

Circuit world, 2021-06, Vol.47 (2), p.146-152

2021

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Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-07, Vol.38 (4)

2020

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Graphene-based plastic absorber for total sub-terahertz radiation shielding

Nanoscale, 2018-01, Vol.10 (28), p.13426-13431

2018

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Investigation of amorphous (Ir,Ru)-Si and (Ir,Ru)-Si-O Schottky contacts to (001) β -Ga 2 O 3

Materials science in semiconductor processing, 2023-02, Vol.154, p.107218, Article 107218

2023

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All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga2O3 Schottky Diodes

Physica status solidi. A, Applications and materials science, 2023-10, Vol.220 (19)

2023

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Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices

Physica status solidi. A, Applications and materials science, 2024-04

2024

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The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures

Materials science in semiconductor processing, 2021-06, Vol.127, p.105694, Article 105694

2021

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Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

Materials science in semiconductor processing, 2021-02, Vol.122, p.105491, Article 105491

2021

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Investigation of amorphous (Ir,Ru)-Si and (Ir,Ru)-Si-O Schottky contacts to (001) β-Ga2O3

Materials science in semiconductor processing, 2023-02, Vol.154, Article 107218

2023

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The influence of oxygen partial pressure on the properties of sputtered vertical NiO/β-Ga2O3 heterojunction diodes

Materials science in semiconductor processing, 2024-12, Vol.184, p.108842, Article 108842

2024

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Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres

Electrical properties of isotype and anisotype ZnO/4H-SiC heterojunction diodes

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET Performance by Reducing Depletion Region Trap Density

Optimization of Two‐Zone Step‐Etched Junction Termination Structures for Vertical GaN Power Devices

Temperature-Dependent Thermal Properties of Supported MoS2 Monolayers

Thermal Stability of Cu/Pd2Si/, Cu/, and Au/Ni/ Schottky Contacts to AlGaN/GaN Heterostructures

Thermal Stability of Cu/Pd 2 Si/, Cu/, and Au/Ni/ Schottky Contacts to AlGaN/GaN Heterostructures

Temperature Evolution of Phonon Properties in Few-Layer Black Phosphorus

Temperature-Dependent Nonlinear Phonon Shifts in a Supported MoS 2 Monolayer

High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/ β ‐Ga 2 O 3 Schottky Diodes

Carrier Trap Density Reduction at SiO 2 /4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres

Carrier Trap Density Reduction at SiO[sub.2]/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres

Temperature-Dependent Nonlinear Phonon Shifts in a Supported MoS2 Monolayer

Development of assembly techniques for connection of AlGaN/GaN/Si chips to DBC substrate

Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology

Graphene-based plastic absorber for total sub-terahertz radiation shielding

Investigation of amorphous (Ir,Ru)-Si and (Ir,Ru)-Si-O Schottky contacts to (001) β -Ga 2 O 3

All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga2O3 Schottky Diodes

Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices

The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures

Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

Investigation of amorphous (Ir,Ru)-Si and (Ir,Ru)-Si-O Schottky contacts to (001) β-Ga2O3

The influence of oxygen partial pressure on the properties of sputtered vertical NiO/β-Ga2O3 heterojunction diodes

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